Pentacene thin-film transistors and inverters with plasma-enhanced atomic-layer-deposited Al2O3 gate dielectric

2007 ◽  
Vol 515 (5) ◽  
pp. 3132-3137 ◽  
Author(s):  
Jae Bon Koo ◽  
Jung Wook Lim ◽  
Seong Hyun Kim ◽  
Sun Jin Yun ◽  
Chan Hoe Ku ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Al2o3 Gate Dielectric

High performance self-aligned top-gate ZnO thin film transistors using sputtered Al2O3 gate dielectric

2012 ◽  
Vol 520 (21) ◽  
pp. 6681-6683 ◽  
Author(s):  
Rongsheng Chen ◽  
Wei Zhou ◽  
Meng Zhang ◽  
Hoi Sing Kwok
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Gate Dielectric ◽  
Zno Thin Film ◽  
Al2o3 Gate Dielectric

Pentacene Organic Thin-Film Transistors with Dual-Gate Structure

2007 ◽  
Vol 124-126 ◽  
pp. 383-386
Author(s):  
Jae Bon Koo ◽  
Jung Wook Lim ◽  
Chan Hoe Ku ◽  
Sang Chul Lim ◽  
Jung Hun Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrostatic Potential ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Gate Structure ◽  
Dual Gate ◽  
Bottom Gate

We report on the fabrication of dual-gate pentacene organic thin-film transistors (OTFTs) using a plasma-enhanced atomic layer deposited (PEALD) 150 nm thick Al2O3 as a bottom gate dielectric and a 300 nm thick parylene or a PEALD 200 nm thick Al2O3 as both a top gate dielectric and a passivation layer. The threshold voltage (Vth) of OTFT with a 300 nm thick parylene as a top gate dielectric is changed from 4.7 V to 1.3 V and that with a PEALD 200 nm thick Al2O3 as a top gate dielectric is changed from 1.95 V to -9.8 V when the voltage bias of top gate electrode is changed from -10 V to 10 V. The change of Vth of OTFT with the dual-gate structure has been successfully understood by an analysis of electrostatic potential.

Abnormal positive bias stress instability of In–Ga–Zn–O thin-film transistors with low-temperature Al2O3 gate dielectric

2016 ◽  
Vol 108 (3) ◽  
pp. 033502 ◽  
Author(s):  
Yu-Hong Chang ◽  
Ming-Jiue Yu ◽  
Ruei-Ping Lin ◽  
Chih-Pin Hsu ◽  
Tuo-Hung Hou
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Positive Bias ◽  
Bias Stress ◽  
Al2o3 Gate Dielectric

Development of ZnO Thin Film Transistors Based on SiN/Al2O3 Gate Dielectric Materials

2011 ◽  
Vol 58 (3) ◽  
pp. 487-491 ◽  
Author(s):  
Eui-Jung Yun ◽  
Young-Wook Song ◽  
Hyoung G. Nam ◽  
Nam-Ihn Cho ◽  
Myunghee Jung
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Dielectric Materials ◽  
Zno Thin Film ◽  
Al2o3 Gate Dielectric
Sign in / Sign up

Export Citation Format

Share Document