High field sensitivity at room temperature in p-n junction based bilayered manganite devices

2008 ◽  
Vol 92 (4) ◽  
pp. 043506 ◽  
Author(s):  
P. S. Vachhani ◽  
J. H. Markna ◽  
D. G. Kuberkar ◽  
R. J. Choudhary ◽  
D. M. Phase
Keyword(s):  
High Field ◽  
Room Temperature ◽  
Field Sensitivity

High field-sensitivity planar Hall sensor based on NiFe/Cu/IrMn trilayer structure

2010 ◽  
Vol 107 (9) ◽  
pp. 09E715 ◽  
Author(s):  
Tran Quang Hung ◽  
Sunjong Oh ◽  
Brajalal Sinha ◽  
Jong-Ryul Jeong ◽  
Dong-Young Kim ◽  
...  
Keyword(s):  
High Field ◽  
Hall Sensor ◽  
Field Sensitivity ◽  
Trilayer Structure

Magnetoelectric Sensors With Directly Integrated Charge Sensitive Readout Circuit—Improved Field Sensitivity and Signal-to-Noise Ratio

2011 ◽  
Vol 11 (10) ◽  
pp. 2260-2265 ◽  
Author(s):  
Zhao Fang ◽  
Ninad Mokhariwale ◽  
Feng Li ◽  
Suman Datta ◽  
Q. M. Zhang
Keyword(s):  
Room Temperature ◽  
Signal To Noise Ratio ◽  
Low Noise ◽  
Magnetic Sensors ◽  
Readout Circuit ◽  
Signal To Noise ◽  
Low Frequencies ◽  
Field Sensitivity ◽  
Piezoelectric Layers ◽  
Noise Ratio

The large magnetoelectric (ME) coupling in the ME laminates makes them attractive for ultrasensitive room temperature magnetic sensors. Here ,we investigate the field sensitivity and signal-to-noise ratio (SNR) of ME laminates, consisting of magnetostrictive and piezoelectric layers (Metglas and piezopolymer PVDF were used as the model system), which are directly integrated with a low noise readout circuit. Both the theoretical analysis and experimental results show that increasing the number of piezoelectric layers can improve the SNR, especially at low frequencies. We also introduce a figure of merit to measure the overall influence of the piezolayer properties on the SNR and show that the newly developed piezoelectric single crystals of PMN-PT and PZN-PT have the promise to achieve a very high SNR and consequently ultra-high sensitivity room temperature magnetic sensors. The results show that the ME coefficients used in early ME composites development works may not be relevant to the SNR. The results also show that enhancing the magnetostrictive coefficient, for example, by employing the flux concentration effect, can lead to enhanced SNR.

Planar Hall Effect Ring Sensors for High Field-Sensitivity

2011 ◽  
Vol 317-319 ◽  
pp. 1136-1140 ◽  
Author(s):  
Brajalal Sinha ◽  
Sunjong Oh ◽  
Torati Sri Ramulu ◽  
Jaein Lim ◽  
Dong Young Kim ◽  
...  
Keyword(s):  
Hall Effect ◽  
Measurement System ◽  
High Field ◽  
Planar Hall Effect ◽  
Sensor Applications ◽  
Hall Effect Sensor ◽  
Field Sensitivity ◽  
Ring Geometry ◽  
Sensor Sensitivity ◽  
Effect Ring

Planar Hall effect sensor has been explored using multi-layer cross-shaped and bridge geometry. We present planar Hall effect in a ring-shaped geometry experimentally that shows progress of sensor sensitivity as well as output signals. Sensitivity improves about 170 times compare to cross-shaped geometry and about 1.4 times to bridge geometry in conventional measurement system. These values become 2.5 times larger at 20o measurement system. The presented ring geometry may take great potential in Planar Hall effect sensor applications.

High-field hall effect in extrinsic and intrinsic tellurium at room temperature

1974 ◽  
Vol 25 (2) ◽  
pp. 489-494 ◽  
Author(s):  
W. Bohmeyer ◽  
W. Hoerstel
Keyword(s):  
Hall Effect ◽  
High Field ◽  
Room Temperature

scholarly journals A Monte Carlo study ,of Electron Transport in Strained Si/SiGe Heterostructures

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 213-216
Author(s):  
Mahbub Rashed ◽  
W.-K. Shih ◽  
S. Jallepalli ◽  
R. Zaman ◽  
T. J. T. Kwan ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
High Field ◽  
Room Temperature ◽  
Monte Carlo Study ◽  
Strained Silicon ◽  
Simulation Tool ◽  
Bulk Materials ◽  
Strained Si ◽  
Mc Simulation

Electron transport in pseudomorphically-grown silicon on relaxed (001) Si1-xGex is investigated using a Monte Carlo (MC) simulation tool. The study includes both electron transport in bulk materials and in nMOS structures. The bulk MC simulator is based on a multiband analytical model, “fitted bands”, representing the features of a realistic energy bandstructure. The investigation includes the study of low- and high-field electron transport characteristics at 77 K and 300 K. Single particle MC simulations are performed for a strained silicon nMOS structure at room temperature. Both calculations show saturation of mobility enhancement in strained silicon beyond germanium mole fraction of 0.2.

High Field Microscopy Studies of Gallium Arsenide-Metal Interface

1986 ◽  
Vol 76 ◽  
Author(s):  
Chand Patel
Keyword(s):  
Gallium Arsenide ◽  
Sample Preparation ◽  
Field Emission ◽  
Experimental Work ◽  
High Field ◽  
Room Temperature ◽  
Low Doses ◽  
Metal Interface ◽  
Potential Barriers ◽  
Practical Nature

ABSTRACTThe Field Emission Microscope has been extensively used in the study of metal and semiconductor surfaces. The process of Field Emission is, itself, of great interest and a considerable amount of both theoretical and experimental work has been carried out in this field. The Field Emission Microscope also yields useful information of a more practical nature, such as the nature of bulk and surface impurity, diffusion, chemisorption and surface potential barriers. It is essential that the surface to be studieg can be prepared in the form of a high curvature tip, with a radius of 10−5cm and can be cleaned sufficiently well for a symmetrical reproducible pattern to be observed.Field Emission technique has been applied to study the behaviour of thin overlayers of gold on GaAs. Using Fowler-Nordheim plots, change in the work function φ, is examined for temperatures, T=77K and T=300K. φ changes slightly for low doses of gold and significantly for larger ones {φ=4.3 − 3.7 eV}. Desorption of gold is also examined and the results indicate two different adsorbed states in Au-overlayers formed at room temperature. Finally, a brief description of sample preparation is also included.

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