Longitudinal Anisotropy of the High-Field Conductivity ofn-Type Germanium at Room Temperature

1969 ◽  
Vol 178 (3) ◽  
pp. 1364-1367 ◽  
Author(s):  
JOHN E. SMITH
Keyword(s):  
High Field ◽  
Room Temperature

High field sensitivity at room temperature in p-n junction based bilayered manganite devices

2008 ◽  
Vol 92 (4) ◽  
pp. 043506 ◽  
Author(s):  
P. S. Vachhani ◽  
J. H. Markna ◽  
D. G. Kuberkar ◽  
R. J. Choudhary ◽  
D. M. Phase
Keyword(s):  
High Field ◽  
Room Temperature ◽  
Field Sensitivity

High-field hall effect in extrinsic and intrinsic tellurium at room temperature

1974 ◽  
Vol 25 (2) ◽  
pp. 489-494 ◽  
Author(s):  
W. Bohmeyer ◽  
W. Hoerstel
Keyword(s):  
Hall Effect ◽  
High Field ◽  
Room Temperature

scholarly journals A Monte Carlo study ,of Electron Transport in Strained Si/SiGe Heterostructures

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 213-216
Author(s):  
Mahbub Rashed ◽  
W.-K. Shih ◽  
S. Jallepalli ◽  
R. Zaman ◽  
T. J. T. Kwan ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
High Field ◽  
Room Temperature ◽  
Monte Carlo Study ◽  
Strained Silicon ◽  
Simulation Tool ◽  
Bulk Materials ◽  
Strained Si ◽  
Mc Simulation

Electron transport in pseudomorphically-grown silicon on relaxed (001) Si1-xGex is investigated using a Monte Carlo (MC) simulation tool. The study includes both electron transport in bulk materials and in nMOS structures. The bulk MC simulator is based on a multiband analytical model, “fitted bands”, representing the features of a realistic energy bandstructure. The investigation includes the study of low- and high-field electron transport characteristics at 77 K and 300 K. Single particle MC simulations are performed for a strained silicon nMOS structure at room temperature. Both calculations show saturation of mobility enhancement in strained silicon beyond germanium mole fraction of 0.2.

High Field Microscopy Studies of Gallium Arsenide-Metal Interface

1986 ◽  
Vol 76 ◽  
Author(s):  
Chand Patel
Keyword(s):  
Gallium Arsenide ◽  
Sample Preparation ◽  
Field Emission ◽  
Experimental Work ◽  
High Field ◽  
Room Temperature ◽  
Low Doses ◽  
Metal Interface ◽  
Potential Barriers ◽  
Practical Nature

ABSTRACTThe Field Emission Microscope has been extensively used in the study of metal and semiconductor surfaces. The process of Field Emission is, itself, of great interest and a considerable amount of both theoretical and experimental work has been carried out in this field. The Field Emission Microscope also yields useful information of a more practical nature, such as the nature of bulk and surface impurity, diffusion, chemisorption and surface potential barriers. It is essential that the surface to be studieg can be prepared in the form of a high curvature tip, with a radius of 10−5cm and can be cleaned sufficiently well for a symmetrical reproducible pattern to be observed.Field Emission technique has been applied to study the behaviour of thin overlayers of gold on GaAs. Using Fowler-Nordheim plots, change in the work function φ, is examined for temperatures, T=77K and T=300K. φ changes slightly for low doses of gold and significantly for larger ones {φ=4.3 − 3.7 eV}. Desorption of gold is also examined and the results indicate two different adsorbed states in Au-overlayers formed at room temperature. Finally, a brief description of sample preparation is also included.

Room Temperature High-Field Spin Dynamics of NV Defects in Sintered Diamonds

2013 ◽  
Vol 44 (10) ◽  
pp. 1235-1244 ◽  
Author(s):  
B. V. Yavkin ◽  
G. V. Mamin ◽  
S. B. Orlinskii ◽  
S. V. Kidalov ◽  
F. M. Shakhov ◽  
...  
Keyword(s):  
High Field ◽  
Room Temperature ◽  
Spin Dynamics

Rapid microchip-based FAIMS determination of trimethylamine, an indicator of pork deterioration

2014 ◽  
Vol 6 (9) ◽  
pp. 2965-2972 ◽  
Author(s):  
Qi Wang ◽  
Yun-Fei Xie ◽  
Wei-Jun Zhao ◽  
Peng Li ◽  
He Qian ◽  
...  
Keyword(s):  
Biogenic Amines ◽  
Ion Mobility Spectrometry ◽  
Ion Mobility ◽  
High Field ◽  
Quantitative Method ◽  
Room Temperature ◽  
Asymmetric Waveform

A fast and quantitative method for the detection of biogenic amines based on the microchip-based high-field asymmetric waveform ion mobility spectrometry (FAIMS) technique was established for evaluating the degree of spoilage of pork stored at room temperature.

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