Realization of p-type conduction in undoped MgxZn1−xO thin films by controlling Mg content

2007 ◽  
Vol 91 (23) ◽  
pp. 232115 ◽  
Author(s):  
Y. F. Li ◽  
B. Yao ◽  
Y. M. Lu ◽  
Z. P. Wei ◽  
Y. Q. Gai ◽  
...  
Keyword(s):  
Thin Films ◽  
P Type ◽  
Mg Content ◽  
Type Conduction

Oxygen Sensitivity of SrFeO3-δ Thin Films Prepared by Sol-Gel Method

2007 ◽  
Vol 280-283 ◽  
pp. 315-318 ◽  
Author(s):  
Chong Liang ◽  
De An Yang ◽  
Jian Jing Song ◽  
Ming Xia Xu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Sol Gel ◽  
Alumina Substrate ◽  
Oxygen Sensitivity ◽  
Coating Film ◽  
Partial Pressures ◽  
P Type ◽  
Type Conduction

Sr(NO3)2, Fe(NO3)3 and citric acid (the mole ratio was 1:1:2) were mixed in water to form sol. Alumina substrate, which had been treated by ultrasonic cleaner, were dipped in the sol and pulled out, and the coating film was heated for 1h at 900oC. Through seventeen times treatment, SrFeO3-d thin film was coated on the alumina substrate. The remainder sol was dried and heated at 400oC, 800oC, 900oC for 2 h. The thin films and the powders were characterized by XRD. The morphologies of thin films were observed by SEM. The results showed that SrFeO3-δ was formed at 900oC on alumina substrate and the grain size was 100 ~ 200 nm. The oxygen sensitivity was measured in the temperature range of 377 ~ 577oC under different oxygen partial pressures. SrFeO3-δ thin film showed p-type conduction. The response time was less than 2 min when being exposed to a change from N2 to 0.466% O2 at 377oC.

Fabrication and Electrical Evaluation of MoSi2-Si Composite Thin Films

2013 ◽  
Vol 566 ◽  
pp. 179-183
Author(s):  
Shinya Hikita ◽  
Teppei Hayashi ◽  
Yuuki Sato ◽  
Shinzo Yoshikado
Keyword(s):  
Thin Films ◽  
Molybdenum Disilicide ◽  
Molar Ratio ◽  
Radio Frequency Magnetron Sputtering ◽  
Hexagonal Crystal Structure ◽  
Hexagonal Crystal ◽  
Conduction Mechanisms ◽  
Unknown Structure ◽  
P Type ◽  
Type Conduction

Thin films of a composite of molybdenum disilicide (MoSi2) and silicon (Si) were fabricated by radio frequency magnetron sputtering using a target made of a powder mixture of MoSi2 and Si with a Si-to-Mo molar ratio of 1:X (2.0 X 2.5). The Hall coefficients were measured to identify the conduction mechanisms in the thin films. The sign and magnitude of the Hall coefficients revealed that thin films with X = 2.02.2 having a hexagonal crystal structure showed p-type conduction, while the mechanism for the n-type film with X = 2.33 was unknown and that for a composite of hexagonal and an unknown structure with X = 2.3, 2.4 and 2.5 showed mixed conduction.

scholarly journals Electronic structure and p -type conduction mechanism of spinel cobaltite oxide thin films

2019 ◽  
Vol 100 (11) ◽  
Author(s):  
X. C. Huang ◽  
J. Y. Zhang ◽  
M. Wu ◽  
S. Zhang ◽  
H. Y. Xiao ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Structure ◽  
Conduction Mechanism ◽  
Oxide Thin Films ◽  
P Type ◽  
Type Conduction

p-type conduction in codoped ZnO thin films

2003 ◽  
Vol 93 (1) ◽  
pp. 396-399 ◽  
Author(s):  
A. V. Singh ◽  
R. M. Mehra ◽  
A. Wakahara ◽  
A. Yoshida
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
P Type ◽  
Type Conduction

Influence of in-situ annealing ambient on p-type conduction in dual ion beam sputtered Sb-doped ZnO thin films

2013 ◽  
Vol 103 (7) ◽  
pp. 072109 ◽  
Author(s):  
Sushil Kumar Pandey ◽  
Saurabh Kumar Pandey ◽  
Vishnu Awasthi ◽  
M. Gupta ◽  
U. P. Deshpande ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Zno Thin Films ◽  
Doped Zno ◽  
P Type ◽  
Type Conduction

A Codoping Route to Realize Low Resistive and Stable p-Type Conduction in (Li, Ni):ZnO Thin Films Grown by Pulsed Laser Deposition

2011 ◽  
Vol 3 (6) ◽  
pp. 1974-1979 ◽  
Author(s):  
E. Senthil Kumar ◽  
Jyotirmoy Chatterjee ◽  
N. Rama ◽  
Nandita DasGupta ◽  
M. S. Ramachandra Rao
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
P Type ◽  
Type Conduction

The two origins of p-type conduction in transparent conducting Ga-doped SnO2 thin films

2011 ◽  
Vol 1324 ◽  
Author(s):  
Huan-hua Wang ◽  
Tieying Yang ◽  
Baoyi Wang ◽  
Kurash Ibrahim ◽  
Xiaoming Jiang
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Growth Conditions ◽  
Spectroscopy Analysis ◽  
Transparent Conducting ◽  
Polycrystalline Thin Films ◽  
Hole Conduction ◽  
Sno2 Thin Films ◽  
P Type ◽  
Type Conduction

AbstractThe p-type conduction in transparent Ga-doped SnO2 thin films was realized and its two origins were discerned through comparison experiments associated with growth conditions, Rutherford backscattering spectroscopy and x-ray photoelectron spectroscopy analysis. All the experiment results suggest that the adsorbed oxygen both in the grain boundaries and at the surfaces is another origin of the net hole conduction in the polycrystalline thin films. This mechanism provides a fairy well explanation for the growth temperature dependence of the p-type conductivities of the films. It also offers a useful guide to better the properties of p-type conducting oxide thin films.

Fabrication of P-Type Cuinse2 Thin Film by MBD Using ECR Excited Nitrogen Ion Source

1992 ◽  
Vol 268 ◽  
Author(s):  
M. Nishitani ◽  
T. Negami ◽  
M. Terauchi ◽  
T. Wada ◽  
T. Hirao
Keyword(s):  
Thin Films ◽  
Ion Source ◽  
Rich Region ◽  
Ecr Plasma ◽  
Nitrogen Ions ◽  
Nitrogen Ion ◽  
Excited Nitrogen ◽  
P Type ◽  
Cuinse2 Thin Film ◽  
Type Conduction

ABSTRACTPolycrystalline CuInSe2 thin films were prepared by coevaporation of the elements under the irradiation of nitrogenions excited by ECR plasma. Nitrogen atoms were doped uniformly in the obtained CuInSe2 films according to the SIMS analysis. The films showed p-type conduction even in the slightly In-rich region where the coevaporation films without the irradiation of nitrogen ions showed n-type conduction. These results show that p-type CuInSe2 thin films even in the slightly In-rich region can be fabricated by the irradiation of ECR excited nitrogen ions during its ternary coevaporation process.

p-type conduction in unintentional carbon-doped ZnO thin films

2007 ◽  
Vol 91 (7) ◽  
pp. 072101 ◽  
Author(s):  
S. T. Tan ◽  
X. W. Sun ◽  
Z. G. Yu ◽  
P. Wu ◽  
G. Q. Lo ◽  
...  
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Carbon Doped ◽  
Doped Zno ◽  
P Type ◽  
Type Conduction

scholarly journals Realization of p-type Conduction in Antimony Doped ZnO Thin Films by PLD

2009 ◽  
Vol 22 (10) ◽  
pp. 814-820
Author(s):  
Ki-Ryeol Bae ◽  
Dong-Wook Lee ◽  
J. Elanchezhiyan ◽  
Won-Jae Lee ◽  
Yun-Mi Bae ◽  
...  
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Doped Zno ◽  
P Type ◽  
Type Conduction
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