The two origins of p-type conduction in transparent conducting Ga-doped SnO2 thin films

2011 ◽  
Vol 1324 ◽  
Author(s):  
Huan-hua Wang ◽  
Tieying Yang ◽  
Baoyi Wang ◽  
Kurash Ibrahim ◽  
Xiaoming Jiang
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Growth Conditions ◽  
Spectroscopy Analysis ◽  
Transparent Conducting ◽  
Polycrystalline Thin Films ◽  
Hole Conduction ◽  
Sno2 Thin Films ◽  
P Type ◽  
Type Conduction

AbstractThe p-type conduction in transparent Ga-doped SnO2 thin films was realized and its two origins were discerned through comparison experiments associated with growth conditions, Rutherford backscattering spectroscopy and x-ray photoelectron spectroscopy analysis. All the experiment results suggest that the adsorbed oxygen both in the grain boundaries and at the surfaces is another origin of the net hole conduction in the polycrystalline thin films. This mechanism provides a fairy well explanation for the growth temperature dependence of the p-type conductivities of the films. It also offers a useful guide to better the properties of p-type conducting oxide thin films.

Preparation and application in p–n homojunction diode of p-type transparent conducting Ga-doped SnO2 thin films

2010 ◽  
Vol 518 (19) ◽  
pp. 5542-5545 ◽  
Author(s):  
Tieying Yang ◽  
Xiubo Qin ◽  
Huan-hua Wang ◽  
Quanjie Jia ◽  
Runsheng Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Transparent Conducting ◽  
Sno2 Thin Films ◽  
P Type

Transparent p- and n-Type Conductive Oxides With Delafossite Structure

2000 ◽  
Vol 623 ◽  
Author(s):  
Hiroshi Yanagi ◽  
Kazushige Ueda ◽  
Shuntaro Ibuki ◽  
Tomomi Hase ◽  
Hideo Hosono ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Band Gap ◽  
Room Temperature ◽  
Optical Band Gap ◽  
Conducting Oxides ◽  
Transparent Conducting ◽  
Delafossite Structure ◽  
P Type ◽  
Type Conduction

AbstractThin films of CuAlO2, CuGaO2 and AglnO2 with delafossite structure were prepared on sapphire substrates by pulsed laser deposition method. The resulting CuA102 thin films exhibited p-type conduction and the electrical conductivity at room temperature was 0.3 Scm−1. CuGaO2 thin films were grown epitaxially on μ-Al2O3 (001) surface and showed p-type conduction (conductivity at room temperature = 0.06 S cm−1). The optical band gap was estimated to be ∼3.5 eV for CuAlO2 or ∼3.6 eV for CuGaO2. On the other hand, the thin film of Sn doped AglnO2 exhibited n-type conduction. The optical band gap and electrical conductivity at room temperature were ∼4.1 eV and 70 S cm−1, respectively. The recent work demonstrates the validity of our chemical design concept for p- and n-type transparent conducting oxides, providing an opportunity for realization of transparent p-n junction using delafossite-type oxides.

Electrical conductivity tuning in p-type transparent conducting AgGaO2 and in quaternary AgInGaO2 thin films

2020 ◽  
Vol 242 ◽  
pp. 122506 ◽  
Author(s):  
Keerthi K ◽  
Hilal Rahman ◽  
Rajani Jacob ◽  
Benoy M. D ◽  
Rachel Reena Philip
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Transparent Conducting ◽  
P Type

Transparent conducting p-type thin films of c-axis self-oriented Bi2Sr2Co2Oy with high figure of merit

2014 ◽  
Vol 50 (68) ◽  
pp. 9697-9699 ◽  
Author(s):  
Renhuai Wei ◽  
Xianwu Tang ◽  
Ling Hu ◽  
Zhenzhen Hui ◽  
Jie Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Figure Of Merit ◽  
Solution Method ◽  
Transparent Conducting ◽  
High Figure ◽  
P Type

Transparent conducting p-type Bi2Sr2Co2Oy thin films show c-axis self-orientation with high figure of merit by a solution method.

scholarly journals X-ray photoelectron spectroscopy analysis of Ge-Sb-Se pulsed laser deposited thin films

2018 ◽  
Vol 101 (8) ◽  
pp. 3347-3356 ◽  
Author(s):  
Emeline Baudet ◽  
Christophe Cardinaud ◽  
Rémi Boidin ◽  
Aurélie Girard ◽  
Jan Gutwirth ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Spectroscopy Analysis ◽  
X Ray
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