A Codoping Route to Realize Low Resistive and Stable p-Type Conduction in (Li, Ni):ZnO Thin Films Grown by Pulsed Laser Deposition

2011 ◽  
Vol 3 (6) ◽  
pp. 1974-1979 ◽  
Author(s):  
E. Senthil Kumar ◽  
Jyotirmoy Chatterjee ◽  
N. Rama ◽  
Nandita DasGupta ◽  
M. S. Ramachandra Rao
2010 ◽  
Vol 24 (28) ◽  
pp. 2785-2791
Author(s):  
J. ELANCHEZHIYAN ◽  
D. W. LEE ◽  
W. J. LEE ◽  
B. C. SHIN

p-type conduction in ZnO thin films has been realized by doping with GaN . Undoped and GaN -doped ZnO thin films were prepared by the pulsed laser deposition technique. All the grown films have been characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and Hall effect measurements in order to study their structural, morphological and electrical properties, respectively. The presence of dopants in the films has been confirmed by energy dispersive X-ray spectroscopy (EDS). XRD results reveal that the wurtzite structure deviates for the films with higher concentrations of GaN . Hall measurements show that the 5 and 10 at.% GaN -doped ZnO films have p-type conduction.


2017 ◽  
Vol 2 (1) ◽  
pp. 60-64
Author(s):  
Yu-Feng Hsiou ◽  
Wei-Kuan Hung ◽  
Chiu-Wei Wang

In this work, antimony (Sb)-doped p-type ZnO thin films on c-plane sapphire substrates have been fabricated by pulsed laser deposition, with Sb2O3 used as the dopant source. The effects of ambient gas or growth temperature on the fabrication process were investigated. The nitrogen ambient was found to be essential to achieve the p-type conduction. The Hall-effect measurements at room temperature indicated that the ZnO thin films doped with 3 at.% Sb and grown at 600 °C under N2 atmosphere exhibited p-type behavior with a hole concentration of 1.17×1017 cm−3, hole mobility of 0.63 cm2/V·s, and resistivity of 84.51 Ω·cm. X-ray diffraction and scanning electron microscopy revealed good crystallization and homogenous surface morphology of the ZnO:Sb thin films. The optical transmission spectrum of the ZnO:Sb thin films indicated that the energy band gap value was around 2.9 eV. Post-growth annealing at 650 oC converted the p-type conduction to n-type. This result implied that Sb-doping and annealing treatment were dominant factors determining native and extrinsic defects in the ZnO thin films, and thus controlling their electrical conductivity properties.


2008 ◽  
Vol 93 (3) ◽  
pp. 593-598 ◽  
Author(s):  
H. Kim ◽  
A. Cepler ◽  
C. Cetina ◽  
D. Knies ◽  
M. S. Osofsky ◽  
...  

2007 ◽  
Vol 253 (11) ◽  
pp. 5067-5069 ◽  
Author(s):  
Xinhua Pan ◽  
Zhizhen Ye ◽  
Jiesheng Li ◽  
Xiuquan Gu ◽  
Yujia Zeng ◽  
...  

2015 ◽  
Vol 347 ◽  
pp. 96-100 ◽  
Author(s):  
Ramanjaneyulu Mannam ◽  
Senthil Kumar Eswaran ◽  
Nandita DasGupta ◽  
M.S. Ramachandra Rao

2015 ◽  
Vol 2 (1) ◽  
pp. 60-64 ◽  
Author(s):  
Yu-Feng Hsiou ◽  
Wei-Kuan Hung ◽  
Chiu-Wei Wang

2008 ◽  
Vol 254 (7) ◽  
pp. 1993-1996 ◽  
Author(s):  
Y.Z. Zhang ◽  
J.G. Lu ◽  
Z.Z. Ye ◽  
H.P. He ◽  
L.P. Zhu ◽  
...  

2005 ◽  
Vol 16 (7) ◽  
pp. 421-427 ◽  
Author(s):  
J. R. Duclère ◽  
R. O’Haire ◽  
A. Meaney ◽  
K. Johnston ◽  
I. Reid ◽  
...  

2006 ◽  
Vol 3 (4) ◽  
pp. 1038-1041 ◽  
Author(s):  
D. J. Rogers ◽  
F. Hosseini Teherani ◽  
T. Monteiro ◽  
M. Soares ◽  
A. Neves ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document