Fabrication of P-Type Cuinse2 Thin Film by MBD Using ECR Excited Nitrogen Ion Source

1992 ◽  
Vol 268 ◽  
Author(s):  
M. Nishitani ◽  
T. Negami ◽  
M. Terauchi ◽  
T. Wada ◽  
T. Hirao
Keyword(s):  
Thin Films ◽  
Ion Source ◽  
Rich Region ◽  
Ecr Plasma ◽  
Nitrogen Ions ◽  
Nitrogen Ion ◽  
Excited Nitrogen ◽  
P Type ◽  
Cuinse2 Thin Film ◽  
Type Conduction

ABSTRACTPolycrystalline CuInSe2 thin films were prepared by coevaporation of the elements under the irradiation of nitrogenions excited by ECR plasma. Nitrogen atoms were doped uniformly in the obtained CuInSe2 films according to the SIMS analysis. The films showed p-type conduction even in the slightly In-rich region where the coevaporation films without the irradiation of nitrogen ions showed n-type conduction. These results show that p-type CuInSe2 thin films even in the slightly In-rich region can be fabricated by the irradiation of ECR excited nitrogen ions during its ternary coevaporation process.

Irradiation Effect of Nitrogen Ion Beam on Carbon Nitride Thin Films

2003 ◽  
Vol 792 ◽  
Author(s):  
Shinichiro Aizawa ◽  
Yuka Nasu ◽  
Masami Aono ◽  
Nobuaki Kitazawa ◽  
Yoshihisa Watanabe
Keyword(s):  
Thin Films ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Columnar Structure ◽  
Irradiation Effect ◽  
Carbon Filament ◽  
Cross Sectional ◽  
Nitrogen Ions ◽  
Nitrogen Ion

ABSTRACTIrradiation effect of low-energy nitrogen ion beam on amorphous carbon nitride (a-CNx) thin films has been investigated. The a-CNx films were prepared on silicon single crystal substrates by hot carbon-filament chemical vapor deposition (HFCVD). After deposition, the CNx films were irradiated by a nitrogen ion beam with energy from 0.1 to 2.0 keV. Irradiation effect on the film microstructure and composition was studied by SEM and XPS, focusing on the effect of nitrogen ion beam energy. Surface and cross sectional observations by SEM reveal that the as-deposited films show a densely distributed columnar structure and the films change to be a sparsely distributed cone-like structure after irradiation. It is also found that 2.0 keV ions skeltonize the films more clearly than 0.1 kev ions. Depth profiles of nitrogen in the films observed by XPS show that nitrogen absorption into films is more prominent after irradiation by 0.1 keV nitrogen ions than 2.0 keV ions.

Oxygen Sensitivity of SrFeO3-δ Thin Films Prepared by Sol-Gel Method

2007 ◽  
Vol 280-283 ◽  
pp. 315-318 ◽  
Author(s):  
Chong Liang ◽  
De An Yang ◽  
Jian Jing Song ◽  
Ming Xia Xu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Sol Gel ◽  
Alumina Substrate ◽  
Oxygen Sensitivity ◽  
Coating Film ◽  
Partial Pressures ◽  
P Type ◽  
Type Conduction

Sr(NO3)2, Fe(NO3)3 and citric acid (the mole ratio was 1:1:2) were mixed in water to form sol. Alumina substrate, which had been treated by ultrasonic cleaner, were dipped in the sol and pulled out, and the coating film was heated for 1h at 900oC. Through seventeen times treatment, SrFeO3-d thin film was coated on the alumina substrate. The remainder sol was dried and heated at 400oC, 800oC, 900oC for 2 h. The thin films and the powders were characterized by XRD. The morphologies of thin films were observed by SEM. The results showed that SrFeO3-δ was formed at 900oC on alumina substrate and the grain size was 100 ~ 200 nm. The oxygen sensitivity was measured in the temperature range of 377 ~ 577oC under different oxygen partial pressures. SrFeO3-δ thin film showed p-type conduction. The response time was less than 2 min when being exposed to a change from N2 to 0.466% O2 at 377oC.

Realization of p-type conduction in undoped MgxZn1−xO thin films by controlling Mg content

2007 ◽  
Vol 91 (23) ◽  
pp. 232115 ◽  
Author(s):  
Y. F. Li ◽  
B. Yao ◽  
Y. M. Lu ◽  
Z. P. Wei ◽  
Y. Q. Gai ◽  
...  
Keyword(s):  
Thin Films ◽  
P Type ◽  
Mg Content ◽  
Type Conduction

Ion Bombardment Effects on GaAs Using 100eV Nitrogen Ions

1988 ◽  
Vol 128 ◽  
Author(s):  
W. M. Lau
Keyword(s):  
Photoelectron Spectroscopy ◽  
Molecular Nitrogen ◽  
Polar Angle ◽  
Ion Bombardment ◽  
Molecular Ions ◽  
Near Surface ◽  
Nitrogen Ions ◽  
Gallium Nitrides ◽  
Nitrogen Ion ◽  
P Type

ABSTRACTThe ion bombardment effects of low energy molecular nitrogen ions (100eV) on GaAs have been investigated using in-situ polar angle dependent X-ray photoelectron spectroscopy. It was found that arsenic and gallium nitrides were formed as a result of the nitrogen ion bombardment. The ion bombardment also caused a depletion of arsenic in the near surface region. For example, with a dose of 6×1015 cm-2 of nitrogen molecular ions at 100eV, the surface structure can be described approximately as 1.5nm of Ga0.67A0.33N on GaAs. The ion bombardment moves the Fermi levels of both n-type and p-type GaAs to mid-gap. Heating the ion bombarded samples in a vacuum chamber to 500°C desorbs all arsenic nitrides but most of the gallium nitrides remain on the surface. The Fermi levels of both n-type and p-type are then stablized at about 0.4eV from the valence band maximum. A surface type-inversion of the n-type substrate is therefore induced by the nitrogen-ionbombardment/annealing treatment.

Fabrication and Electrical Evaluation of MoSi2-Si Composite Thin Films

2013 ◽  
Vol 566 ◽  
pp. 179-183
Author(s):  
Shinya Hikita ◽  
Teppei Hayashi ◽  
Yuuki Sato ◽  
Shinzo Yoshikado
Keyword(s):  
Thin Films ◽  
Molybdenum Disilicide ◽  
Molar Ratio ◽  
Radio Frequency Magnetron Sputtering ◽  
Hexagonal Crystal Structure ◽  
Hexagonal Crystal ◽  
Conduction Mechanisms ◽  
Unknown Structure ◽  
P Type ◽  
Type Conduction

Thin films of a composite of molybdenum disilicide (MoSi2) and silicon (Si) were fabricated by radio frequency magnetron sputtering using a target made of a powder mixture of MoSi2 and Si with a Si-to-Mo molar ratio of 1:X (2.0 X 2.5). The Hall coefficients were measured to identify the conduction mechanisms in the thin films. The sign and magnitude of the Hall coefficients revealed that thin films with X = 2.02.2 having a hexagonal crystal structure showed p-type conduction, while the mechanism for the n-type film with X = 2.33 was unknown and that for a composite of hexagonal and an unknown structure with X = 2.3, 2.4 and 2.5 showed mixed conduction.

scholarly journals Electronic structure and p -type conduction mechanism of spinel cobaltite oxide thin films

2019 ◽  
Vol 100 (11) ◽  
Author(s):  
X. C. Huang ◽  
J. Y. Zhang ◽  
M. Wu ◽  
S. Zhang ◽  
H. Y. Xiao ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Structure ◽  
Conduction Mechanism ◽  
Oxide Thin Films ◽  
P Type ◽  
Type Conduction

Preparation of molybdenum nitride thin films by N+ ion implantation

1992 ◽  
Vol 7 (2) ◽  
pp. 374-378 ◽  
Author(s):  
J-G. Choi ◽  
D. Choi ◽  
L.T. Thompson
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Substrate Surface ◽  
Molybdenum Nitride ◽  
X Ray Diffraction ◽  
Ion Energy ◽  
Ion Channeling ◽  
Ion Energies ◽  
Nitrogen Ions ◽  
Nitrogen Ion

A series of molybdenum nitride films were synthesized by implanting energetic nitrogen ions into molybdenum thin films. The resulting films were characterized using x-ray diffraction to determine the effects of nitrogen ion dose (4 × 1016−4 × 1017 N+/cm2), accelerating voltage (50–200 kV), and target temperature (∼298–773 K) on their structural properties. The order of structural transformation with increased incorporation of nitrogen ions into the Mo film can be summarized as follows: Mo → γ−Mo2N → δ−MoN. Nitrogen incorporation was increased by either increasing the dose or decreasing the ion energy. At elevated target temperatures the metastable B1–MoN phase was also produced. In most cases the Mo nitride crystallites formed with the planes of highest atomic density parallel to the substrate surface. At high ion energies preferential orientation developed so that the more open crystallographic directions aligned with the ion beam direction. We tentatively attributed this behavior to ion channeling effects.

p-type conduction in codoped ZnO thin films

2003 ◽  
Vol 93 (1) ◽  
pp. 396-399 ◽  
Author(s):  
A. V. Singh ◽  
R. M. Mehra ◽  
A. Wakahara ◽  
A. Yoshida
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
P Type ◽  
Type Conduction

Influence of in-situ annealing ambient on p-type conduction in dual ion beam sputtered Sb-doped ZnO thin films

2013 ◽  
Vol 103 (7) ◽  
pp. 072109 ◽  
Author(s):  
Sushil Kumar Pandey ◽  
Saurabh Kumar Pandey ◽  
Vishnu Awasthi ◽  
M. Gupta ◽  
U. P. Deshpande ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Zno Thin Films ◽  
Doped Zno ◽  
P Type ◽  
Type Conduction

A Codoping Route to Realize Low Resistive and Stable p-Type Conduction in (Li, Ni):ZnO Thin Films Grown by Pulsed Laser Deposition

2011 ◽  
Vol 3 (6) ◽  
pp. 1974-1979 ◽  
Author(s):  
E. Senthil Kumar ◽  
Jyotirmoy Chatterjee ◽  
N. Rama ◽  
Nandita DasGupta ◽  
M. S. Ramachandra Rao
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
P Type ◽  
Type Conduction
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