Effects of oxidation on band edge states in H-covered ultrasmall Si quantum boxes: Calculations of electronic states and oscillator strengths

2003 ◽  
Vol 94 (10) ◽  
pp. 6982-6984 ◽  
Author(s):  
Masahiko Nishida
Keyword(s):  
Electronic States ◽  
Oscillator Strengths ◽  
Band Edge ◽  
Edge States

Ultrafast Carrier Dynamics, Optical Amplification, and Lasing in Nanocrystal Quantum Dots

MRS Bulletin ◽  
2001 ◽  
Vol 26 (12) ◽  
pp. 998-1004 ◽  
Author(s):  
Victor I. Klimov ◽  
Moungi G. Bawendi
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Electronic States ◽  
Three Dimensions ◽  
Band Edge ◽  
Lasing Threshold ◽  
Wide Energy Range ◽  
Band Edge Emission ◽  
Edge States

Semiconductor materials are widely used in both optically and electrically pumped lasers. The use of semiconductor quantum wells (QWs) as optical-gain media has resulted in important advances in laser technology. QWs have a two-dimensional, step-like density of electronic states that is nonzero at the band edge, enabling a higher concentration of carriers to contribute to the band-edge emission and leading to a reduced lasing threshold, improved temperature stability, and a narrower emission line. A further enhancement in the density of the band-edge states and an associated reduction in the lasing threshold are in principle possible using quantum wires and quantum dots (QDs), in which the confinement is in two and three dimensions, respectively. In very small dots, the spacing of the electronic states is much greater than the available thermal energy (strong confinement), inhibiting thermal depopulation of the lowest electronic states. This effect should result in a lasing threshold that is temperatureinsensitive at an excitation level of only 1 electron-hole (e-h) pair per dot on average. Additionally, QDs in the strongconfinement regime have an emission wavelength that is a pronounced function of size, adding the advantage of continuous spectral tunability over a wide energy range simply by changing the size of the dots.

Band-edge states in short-period (GaAs)m/(AlAs)nsuperlattices

1989 ◽  
Vol 39 (8) ◽  
pp. 5165-5174 ◽  
Author(s):  
Sudha Gopalan ◽  
N. E. Christensen ◽  
M. Cardona
Keyword(s):  
Band Edge ◽  
Edge States ◽  
Short Period

scholarly journals Excitation to defect-bound band edge states in two-dimensional semiconductors and its effect on carrier transport

2019 ◽  
Vol 5 (1) ◽  
Author(s):  
Dan Wang ◽  
Dong Han ◽  
Damien West ◽  
Nian-Ke Chen ◽  
Sheng-Yi Xie ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Band Edge ◽  
Two Dimensional ◽  
Edge States

On the “U-shaped” continuum of band edge states at the Si/SiO2 interface

2011 ◽  
Vol 99 (22) ◽  
pp. 223516 ◽  
Author(s):  
J. T. Ryan ◽  
R. G. Southwick ◽  
J. P. Campbell ◽  
K. P. Cheung ◽  
C. D. Young ◽  
...  
Keyword(s):  
Band Edge ◽  
Edge States

Surface passivant effects on electronic states of the band edge in Si-nanocrystals

2003 ◽  
Vol 126 (3) ◽  
pp. 103-106 ◽  
Author(s):  
Ying Dai ◽  
Shenghao Han ◽  
Dadi Dai ◽  
Ying Zhang ◽  
Yun Qi
Keyword(s):  
Electronic States ◽  
Band Edge ◽  
Si Nanocrystals

Abinitio SCF and MRD-CI description of the A2A′ – X2A″ transition of the as yet unknown HNCl molecule

1985 ◽  
Vol 63 (11) ◽  
pp. 3264-3268 ◽  
Author(s):  
Britta L. Schürmann ◽  
Robert J. Buenker
Keyword(s):  
Ground State ◽  
Mode Coupling ◽  
Vibrational Analysis ◽  
Electronic States ◽  
Oscillator Strengths ◽  
Fundamental Frequencies ◽  
Condon Factors ◽  
Franck Condon ◽  
Linear Geometry ◽  
Made In

Abinitio potential curves of the X2A″ ground state and the first excited A2A′ state (2Π in linear geometry) of HNCl are calculated employing multi-reference single- and double-excitation configuration interaction in order to aid in the search for this system experimentally. A vibrational analysis (frequencies and Franck–Condon factors) of the A2A′ – X2A″ transition is undertaken by neglecting coupling between the various modes. Diagonal and off-diagonal force constants together with the fundamental frequencies have been calculated by including mode coupling for both electronic states, and oscillator strengths and radiative lifetimes are also obtained. Comparison with theoretical and experimental results for other isovalent systems is also made in order to establish trends in this group of HAB systems.

scholarly journals Spectroscopic Studies of Band Edge Electronic States in Elemental High-k Oxide Dielectrics on Si and Ge Substrates

2007 ◽  
Author(s):  
G. Lucovsky ◽  
H. Seo ◽  
L. B. Fleming ◽  
M. D. Ulrich ◽  
J. Lüning ◽  
...  
Keyword(s):  
Electronic States ◽  
Spectroscopic Studies ◽  
Band Edge ◽  
High K
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