scholarly journals Determination of InN–GaN heterostructure band offsets from internal photoemission measurements

2007 ◽  
Vol 91 (15) ◽  
pp. 152108 ◽  
Author(s):  
Zahid Hasan Mahmood ◽  
A. P. Shah ◽  
Abdul Kadir ◽  
M. R. Gokhale ◽  
Sandip Ghosh ◽  
...  
Keyword(s):  
Band Offsets ◽  
Internal Photoemission ◽  
Gan Heterostructure

A Purely Spectroscopic Technique for Determining Energy Band Offsets in Quantum Wells

1991 ◽  
Vol 240 ◽  
Author(s):  
Emil S. Koteies
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Accurate Determination ◽  
Energy Difference ◽  
Spectroscopic Technique ◽  
Band Offsets ◽  
Band Energy ◽  
Semiconductor Quantum Wells ◽  
Sensitive Function

ABSTRACTWe have developed a novel experimental technique for accurately determining band offsets in semiconductor quantum wells (QW). It is based on the fact that the ground state heavy- hole (HH) band energy is more sensitive to the depth of the valence band well than the light-hole (LH) band energy. Further, it is well known that as a function of the well width, Lz, the energy difference between the LH and HH excitons in a lattice matched, unstrained QW system experiences a maximum. Calculations show that the position, and more importantly, the magnitude of this maximum is a sensitive function of the valence band offset, Qy, which determines the depth of the valence band well. By fitting experimentally measured LH-HH splittings as a function of Lz, an accurate determination of band offsets can be derived. We further reduce the experimental uncertainty by plotting LH-HH as a function of HH energy (which is a function of Lz ) rather than Lz itself, since then all of the relevant parameters can be precisely determined from absorption spectroscopy alone. Using this technique, we have derived the conduction band offsets for several material systems and, where a consensus has developed, have obtained values in good agreement with other determinations.

Determination of band offsets between p-NiO gate electrode and unintentionally doped GaN for normally-off GaN power device

2017 ◽  
Vol 728 ◽  
pp. 400-403 ◽  
Author(s):  
Liuan Li ◽  
Wenjing Wang ◽  
Liang He ◽  
Xiaorong Zhang ◽  
Zhisheng Wu ◽  
...  
Keyword(s):  
Power Device ◽  
Gate Electrode ◽  
Band Offsets

Determination of the valence band offsets at HfO2 /InN(0001) and InN/In0.3 Ga0.7 N(0001) heterojunctions using X-ray photoelectron spectroscopy

2010 ◽  
Vol 207 (6) ◽  
pp. 1335-1337 ◽  
Author(s):  
Anja Eisenhardt ◽  
Andreas Knübel ◽  
Ralf Schmidt ◽  
Marcel Himmerlich ◽  
Joachim Wagner ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Band Offsets ◽  
X Ray

scholarly journals Determination of GaAs zinc blende/wurtzite band offsets utilizing GaAs nanowires with an axial GaAsSb insert

2017 ◽  
Vol 122 (24) ◽  
pp. 245102 ◽  
Author(s):  
L. Ahtapodov ◽  
H. Kauko ◽  
A. M. Munshi ◽  
B. O. Fimland ◽  
A. T. J. van Helvoort ◽  
...  
Keyword(s):  
Band Offsets ◽  
Zinc Blende ◽  
Gaas Nanowires

Staggered band alignments in AlGaAs heterojunctions and the determination of valence‐band offsets

1986 ◽  
Vol 48 (8) ◽  
pp. 541-543 ◽  
Author(s):  
P. Dawson ◽  
B. A. Wilson ◽  
C. W. Tu ◽  
R. C. Miller
Keyword(s):  
Valence Band ◽  
Band Offsets ◽  
Band Alignments

Determination of Band Offsets in Heterostructured Colloidal Nanorods Using Scanning Tunneling Spectroscopy

Nano Letters ◽  
2008 ◽  
Vol 8 (9) ◽  
pp. 2954-2958 ◽  
Author(s):  
Dov Steiner ◽  
Dirk Dorfs ◽  
Uri Banin ◽  
Fabio Della Sala ◽  
Liberato Manna ◽  
...  
Keyword(s):  
Scanning Tunneling Spectroscopy ◽  
Tunneling Spectroscopy ◽  
Scanning Tunneling ◽  
Band Offsets
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