Determination of the valence band offsets at HfO2 /InN(0001) and InN/In0.3 Ga0.7 N(0001) heterojunctions using X-ray photoelectron spectroscopy

2010 ◽  
Vol 207 (6) ◽  
pp. 1335-1337 ◽  
Author(s):  
Anja Eisenhardt ◽  
Andreas Knübel ◽  
Ralf Schmidt ◽  
Marcel Himmerlich ◽  
Joachim Wagner ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Band Offsets ◽  
X Ray

BBonding in minerals: the application of PAX (photoelectron and X-ray) spectroscopy to the direct determination of electronic structure

1989 ◽  
Vol 53 (370) ◽  
pp. 153-164 ◽  
Author(s):  
David S. Urch
Keyword(s):  
Electronic Structure ◽  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Direct Determination ◽  
Energy Scale ◽  
X Ray ◽  
Electron Transitions ◽  
Dipole Selection Rule ◽  
The Individual

AbstractX-ray photoelectron spectroscopy can be used to measure the ionization energies of electrons in both valence band and core orbitals. As core vacancies are the initial states for X-ray emission, a knowledge of their energies for all atoms in a mineral enables all the X-ray spectra to be placed on a common energy scale. X-ray spectra are atom specific and are governed by the dipole selection rule. Thus the individual bonding roles of the different atoms are revealed by the fine structure of valence X-ray peaks (i.e. peaks which result from electron transitions between valence band orbitals and core vacancies). The juxtaposition of such spectra enables the composition of the molecular orbitals that make up the chemical bonds of a mineral to be determined.Examples of this approach to the direct determination of electronic structure are given for silica, forsterite, brucite, and pyrite. Multi-electron effects and developments involving anisotropic X-ray emission from single crystals are also discussed.

X-Ray-Photoelectron-Spectroscopy Determination of the Valence Band Structure of Polymeric Sulfur Nitride,(SN)x

1975 ◽  
Vol 35 (26) ◽  
pp. 1803-1806 ◽  
Author(s):  
P. Mengel ◽  
P. M. Grant ◽  
W. E. Rudge ◽  
B. H. Schechtman ◽  
D. W. Rice
Keyword(s):  
Band Structure ◽  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Valence Band Structure ◽  
X Ray

Erratum: “Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy” [Appl. Phys. Lett. 94, 052101 (2009)]

2009 ◽  
Vol 94 (12) ◽  
pp. 129901
Author(s):  
A. L. Yang ◽  
H. P. Song ◽  
X. L. Liu ◽  
H. Y. Wei ◽  
Y. Guo ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Band Offsets ◽  
X Ray

Determination of Sm2O3∕GaAs heterojunction band offsets by x-ray photoelectron spectroscopy

2008 ◽  
Vol 92 (15) ◽  
pp. 153511 ◽  
Author(s):  
A. D. Stewart ◽  
A. Gerger ◽  
B. P. Gila ◽  
C. R. Abernathy ◽  
S. J. Pearton
Keyword(s):  
Photoelectron Spectroscopy ◽  
Band Offsets ◽  
X Ray

Experimental determination of valence band offset at PbTe/CdTe(111) heterojunction interface by x-ray photoelectron spectroscopy

2008 ◽  
Vol 93 (20) ◽  
pp. 202101 ◽  
Author(s):  
Jianxiao Si ◽  
Shuqiang Jin ◽  
Hanjie Zhang ◽  
Ping Zhu ◽  
Dongjiang Qiu ◽  
...  
Keyword(s):  
Experimental Determination ◽  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Band Offset ◽  
Valence Band Offset ◽  
X Ray

Valence Band Offsets of LiPON∕LiCoO2 Hetero-Interfaces Determined by X-ray Photoelectron Spectroscopy

2011 ◽  
Vol 14 (12) ◽  
pp. A189 ◽  
Author(s):  
Jie Song ◽  
Susanne Jacke ◽  
Gennady Cherkashinin ◽  
Stefan Schmid ◽  
Quanfeng Dong ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Band Offsets ◽  
X Ray

Conduction and valence band offsets of ZnO/β-Ga2O3 interface measured by X-ray photoelectron spectroscopy

2018 ◽  
Author(s):  
S.M. Sun ◽  
W.J. Liu ◽  
Y.P. Wang ◽  
Y.W. Huan ◽  
H. Liu ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Band Offsets ◽  
X Ray

Compositionally Dependent Band Offsets In Aln/AlxGa1-xN Heterojunctions Measured By Using X-Ray Photoelectron Spectroscopy

1997 ◽  
Vol 482 ◽  
Author(s):  
R.A. Beach ◽  
E.C. Piquette ◽  
R.W. Grant ◽  
T.C. McGill
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Valence Band Maximum ◽  
Core Level ◽  
Band Offset ◽  
Valence Band Offset ◽  
Band Offsets ◽  
Band Maximum ◽  
X Ray ◽  
Al Content

AbstractAlthough GaN has been extensively studied for applications in both light emitting and high power devices, the AlN/GaN valence band offset remains an area of contention. Values quoted in the literature range from 0.8eV (Martin)[1] to 1.36eV (Waldrop)[2]. This paper details an investigation of the AIN/AlxGa1-xN band offset as a function of alloy composition. We find an AlN/AlxGa1-xN valence band offset that is nearly linear with Al content and an end point offset for AlN/GaN of 1.36 ± 0.1 eV. Samples were grown using radio frequency plasma assisted molecular beam epitaxy and characterized with x-ray photoelectron spectroscopy(XPS). Core-level and valence-band XPS data for AIN (0001) and AlxGa1-xN (0001) samples were analyzed to determine core-level to valence band maximum (VBM) energy differences. In addition, oxygen contamination effects were tracked in an effort to improve accuracy. Energy separations of core levels were obtained from AlN/AlxGa1-xN(0001) heterojunctions. From this and the core-level to valence band maximum separations of the bulk materials, valence band offsets were calculated.

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