Staggered band alignments in AlGaAs heterojunctions and the determination of valence‐band offsets

1986 ◽  
Vol 48 (8) ◽  
pp. 541-543 ◽  
Author(s):  
P. Dawson ◽  
B. A. Wilson ◽  
C. W. Tu ◽  
R. C. Miller
Keyword(s):  
Valence Band ◽  
Band Offsets ◽  
Band Alignments

scholarly journals Investigation of Band Alignment for Hybrid 2D-MoS2/3D-β-Ga2O3 Heterojunctions with Nitridation

2019 ◽  
Vol 14 (1) ◽  
Author(s):  
Ya-Wei Huan ◽  
Ke Xu ◽  
Wen-Jun Liu ◽  
Hao Zhang ◽  
Dmitriy Anatolyevich Golosov ◽  
...  
Keyword(s):  
Valence Band ◽  
Transition Metal Dichalcogenides ◽  
Three Dimensional ◽  
Optoelectronic Devices ◽  
Band Alignment ◽  
Band Offsets ◽  
Group Iii ◽  
Nanoelectronic Devices ◽  
Metal Dichalcogenides ◽  
Band Alignments

AbstractHybrid heterojunctions based on two-dimensional (2D) and conventional three-dimensional (3D) materials provide a promising way toward nanoelectronic devices with engineered features. In this work, we investigated the band alignment of a mixed-dimensional heterojunction composed of transferred MoS2 on β-Ga2O3($$ 2- $$2-01) with and without nitridation. The conduction and valence band offsets for unnitrided 2D-MoS2/3D-β-Ga2O3 heterojunction were determined to be respectively 0.43 ± 0.1 and 2.87 ± 0.1 eV. For the nitrided heterojunction, the conduction and valence band offsets were deduced to 0.68 ± 0.1 and 2.62 ± 0.1 eV, respectively. The modified band alignment could result from the dipole formed by charge transfer across the heterojunction interface. The effect of nitridation on the band alignments between group III oxides and transition metal dichalcogenides will supply feasible technical routes for designing their heterojunction-based electronic and optoelectronic devices.

A Purely Spectroscopic Technique for Determining Energy Band Offsets in Quantum Wells

1991 ◽  
Vol 240 ◽  
Author(s):  
Emil S. Koteies
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Accurate Determination ◽  
Energy Difference ◽  
Spectroscopic Technique ◽  
Band Offsets ◽  
Band Energy ◽  
Semiconductor Quantum Wells ◽  
Sensitive Function

ABSTRACTWe have developed a novel experimental technique for accurately determining band offsets in semiconductor quantum wells (QW). It is based on the fact that the ground state heavy- hole (HH) band energy is more sensitive to the depth of the valence band well than the light-hole (LH) band energy. Further, it is well known that as a function of the well width, Lz, the energy difference between the LH and HH excitons in a lattice matched, unstrained QW system experiences a maximum. Calculations show that the position, and more importantly, the magnitude of this maximum is a sensitive function of the valence band offset, Qy, which determines the depth of the valence band well. By fitting experimentally measured LH-HH splittings as a function of Lz, an accurate determination of band offsets can be derived. We further reduce the experimental uncertainty by plotting LH-HH as a function of HH energy (which is a function of Lz ) rather than Lz itself, since then all of the relevant parameters can be precisely determined from absorption spectroscopy alone. Using this technique, we have derived the conduction band offsets for several material systems and, where a consensus has developed, have obtained values in good agreement with other determinations.

Determination of the valence band offsets at HfO2 /InN(0001) and InN/In0.3 Ga0.7 N(0001) heterojunctions using X-ray photoelectron spectroscopy

2010 ◽  
Vol 207 (6) ◽  
pp. 1335-1337 ◽  
Author(s):  
Anja Eisenhardt ◽  
Andreas Knübel ◽  
Ralf Schmidt ◽  
Marcel Himmerlich ◽  
Joachim Wagner ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Band Offsets ◽  
X Ray

scholarly journals Experimental determination of the valence band offsets of ZnGeN2 and (ZnGe)0.94Ga0.12N2 with GaN

2021 ◽  
Vol 54 (24) ◽  
pp. 245102
Author(s):  
Md Rezaul Karim ◽  
Brenton A Noesges ◽  
Benthara Hewage Dinushi Jayatunga ◽  
Menglin Zhu ◽  
Jinwoo Hwang ◽  
...  
Keyword(s):  
Experimental Determination ◽  
Valence Band ◽  
Band Offsets

Determination of valence band offsets from Si/Si1−xGex/Si using temperature‐dependent current–voltage characteristics

1996 ◽  
Vol 79 (5) ◽  
pp. 2463-2466 ◽  
Author(s):  
O. Chretien ◽  
A. Souifi ◽  
R. Apetz ◽  
L. Vescan ◽  
H. Lüth ◽  
...  
Keyword(s):  
Valence Band ◽  
Temperature Dependent ◽  
Band Offsets ◽  
Current Voltage ◽  
Current Voltage Characteristics

scholarly journals Al Composition Dependence of Band Offsets for SiO2 on α-(AlxGa1-x)2O3

2021 ◽  
Author(s):  
Xinyi Xia ◽  
Chaker Fares ◽  
Fan Ren ◽  
Anna Hassa ◽  
Holger von Wenckstern ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Composition Dependence ◽  
Atomic Layer ◽  
Wide Bandgap ◽  
Band Alignment ◽  
Band Offsets ◽  
Layer Deposition ◽  
Semiconductor System ◽  
Band Alignments

Abstract Valence band offsets were measured by X Ray Photoelectron Spectroscopy for SiO2 deposited by Atomic Layer Deposition on α-(AlxGa1-x)2O3 alloys with x= 0.26-0.74 grown with a continuous composition spread to enable investigations of the band alignment as a function of the alloy composition. From measurement of the core levels in the alloys, the bandgaps were determined to range from 5.8 eV (x=0.26) to 7eV (x=0.74). The valence band offsets were -1.2 eV for x=0.26, -0.2 eV for x=0.42, 0.2 eV for x=0.58 and 0.4 eV for x=0.74. Given the bandgap of the SiO2 was 8.7 eV, this led to conduction band offsets of 4.1 eV (x=0.26) to 1.3 eV (x=0.74). The band alignments were nested for x>0.5 , but at lower Al contents the conductions band offsets were negative, with a staggered band alignment. This shows the challenge of finding appropriate dielectrics for this ultra-wide bandgap semiconductor system.

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