scholarly journals Determination of GaAs zinc blende/wurtzite band offsets utilizing GaAs nanowires with an axial GaAsSb insert

2017 ◽  
Vol 122 (24) ◽  
pp. 245102 ◽  
Author(s):  
L. Ahtapodov ◽  
H. Kauko ◽  
A. M. Munshi ◽  
B. O. Fimland ◽  
A. T. J. van Helvoort ◽  
...  
Keyword(s):  
Band Offsets ◽  
Zinc Blende ◽  
Gaas Nanowires

Polytypism in GaAs nanowires: determination of the interplanar spacing of wurtzite GaAs by X-ray diffraction

2015 ◽  
Vol 22 (1) ◽  
pp. 67-75 ◽  
Author(s):  
Martin Köhl ◽  
Philipp Schroth ◽  
Andrey A. Minkevich ◽  
Jean-Wolfgang Hornung ◽  
Emmanouil Dimakis ◽  
...  
Keyword(s):  
Interplanar Spacing ◽  
Stacking Sequence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Zinc Blende ◽  
Gaas Nanowires ◽  
Mean Diameter ◽  
Order Of Magnitude ◽  
Focused Beam

In GaAs nanowires grown along the cubic [111]cdirection, zinc blende and wurtzite arrangements have been observed in their stacking sequence, since the energetic barriers for nucleation are typically of similar order of magnitude. It is known that the interplanar spacing of the (111)cGa (or As) planes in the zinc blende polytype varies slightly from the wurtzite polytype. However, different values have been reported in the literature. Here, the ratio of the interplanar spacing of these polytypes is extracted based on X-ray diffraction measurements for thin GaAs nanowires with a mean diameter of 18–25 nm. The measurements are performed with a nano-focused beam which facilitates the separation of the scattering of nanowires and of parasitic growth. The interplanar spacing of the (111)cGa (or As) planes in the wurtzite arrangement in GaAs nanowires is observed to be 0.66% ± 0.02% larger than in the zinc blende arrangement.

A Purely Spectroscopic Technique for Determining Energy Band Offsets in Quantum Wells

1991 ◽  
Vol 240 ◽  
Author(s):  
Emil S. Koteies
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Accurate Determination ◽  
Energy Difference ◽  
Spectroscopic Technique ◽  
Band Offsets ◽  
Band Energy ◽  
Semiconductor Quantum Wells ◽  
Sensitive Function

ABSTRACTWe have developed a novel experimental technique for accurately determining band offsets in semiconductor quantum wells (QW). It is based on the fact that the ground state heavy- hole (HH) band energy is more sensitive to the depth of the valence band well than the light-hole (LH) band energy. Further, it is well known that as a function of the well width, Lz, the energy difference between the LH and HH excitons in a lattice matched, unstrained QW system experiences a maximum. Calculations show that the position, and more importantly, the magnitude of this maximum is a sensitive function of the valence band offset, Qy, which determines the depth of the valence band well. By fitting experimentally measured LH-HH splittings as a function of Lz, an accurate determination of band offsets can be derived. We further reduce the experimental uncertainty by plotting LH-HH as a function of HH energy (which is a function of Lz ) rather than Lz itself, since then all of the relevant parameters can be precisely determined from absorption spectroscopy alone. Using this technique, we have derived the conduction band offsets for several material systems and, where a consensus has developed, have obtained values in good agreement with other determinations.

Determination of band offsets between p-NiO gate electrode and unintentionally doped GaN for normally-off GaN power device

2017 ◽  
Vol 728 ◽  
pp. 400-403 ◽  
Author(s):  
Liuan Li ◽  
Wenjing Wang ◽  
Liang He ◽  
Xiaorong Zhang ◽  
Zhisheng Wu ◽  
...  
Keyword(s):  
Power Device ◽  
Gate Electrode ◽  
Band Offsets

Distribution of zinc-blende twins and wurtzite segments in GaAs nanowires probed by X-ray nanodiffraction

2013 ◽  
Vol 7 (10) ◽  
pp. 860-863 ◽  
Author(s):  
Andreas Biermanns ◽  
Dina Carbone ◽  
Steffen Breuer ◽  
Vincent L. R. Jacques ◽  
Tobias Schulli ◽  
...  
Keyword(s):  
X Ray ◽  
Zinc Blende ◽  
Gaas Nanowires

Stacking-Faults-Free Zinc Blende GaAs Nanowires

Nano Letters ◽  
2009 ◽  
Vol 9 (1) ◽  
pp. 215-219 ◽  
Author(s):  
Hadas Shtrikman ◽  
Ronit Popovitz-Biro ◽  
Andrey Kretinin ◽  
Moty Heiblum
Keyword(s):  
Stacking Faults ◽  
Zinc Blende ◽  
Gaas Nanowires ◽  
Free Zinc

Twins and strain relaxation in zinc-blende GaAs nanowires grown on silicon

2017 ◽  
Vol 395 ◽  
pp. 195-199 ◽  
Author(s):  
J.C. Piñero ◽  
D. Araújo ◽  
C.E. Pastore ◽  
M. Gutierrez ◽  
C. Frigeri ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
Zinc Blende ◽  
Gaas Nanowires

scholarly journals Band alignment in quantum wells from automatically tuned DFT+U

2019 ◽  
Vol 21 (11) ◽  
pp. 5966-5973 ◽  
Author(s):  
Grigory Kolesov ◽  
Chungwei Lin ◽  
Andrew Knyazev ◽  
Keisuke Kojima ◽  
Joseph Katz ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Band Alignment ◽  
Bulk Properties ◽  
Band Offsets ◽  
Zinc Blende

Accurate band offsets in III–V zinc blende-alloy quantum wells were obtained computationally with the DFT+U method automatically tuned to reproduce bulk properties.

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