Optical characterization of Si1−xGex nanodots grown on Si substrates via ultrathin SiO2 buffer layers

2007 ◽  
Vol 101 (11) ◽  
pp. 114312 ◽  
Author(s):  
C. D. Poweleit ◽  
C.-W. Hu ◽  
I. S. T. Tsong ◽  
J. Tolle ◽  
J. Kouvetakis
Keyword(s):  
Optical Characterization ◽  
Buffer Layers ◽  
Si Substrates

Optical characterization of stress in narrow GaAs stripes on patterned Si substrates

1989 ◽  
Vol 55 (4) ◽  
pp. 365-367 ◽  
Author(s):  
J. De Boeck ◽  
K. Deneffe ◽  
J. Christen ◽  
D. J. Arent ◽  
G. Borghs
Keyword(s):  
Optical Characterization ◽  
Si Substrates

scholarly journals Surface passivation and optical characterization of Al2O3/a-SiCx stacks on c-Si substrates

2013 ◽  
Vol 4 ◽  
pp. 726-731 ◽  
Author(s):  
Gema López ◽  
Pablo R Ortega ◽  
Cristóbal Voz ◽  
Isidro Martín ◽  
Mónica Colina ◽  
...  
Keyword(s):  
Wavelength Range ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Surface Recombination ◽  
Chemical Vapor ◽  
Optical Characterization ◽  
Surface Recombination Velocity ◽  
Carrier Injection ◽  
Si Substrates

The aim of this work is to study the surface passivation of aluminum oxide/amorphous silicon carbide (Al2O3/a-SiCx) stacks on both p-type and n-type crystalline silicon (c-Si) substrates as well as the optical characterization of these stacks. Al2O3 films of different thicknesses were deposited by thermal atomic layer deposition (ALD) at 200 °C and were complemented with a layer of a-SiCx deposited by plasma-enhanced chemical vapor deposition (PECVD) to form anti-reflection coating (ARC) stacks with a total thickness of 75 nm. A comparative study has been carried out on polished and randomly textured wafers. We have experimentally determined the optimum thickness of the stack for photovoltaic applications by minimizing the reflection losses over a wide wavelength range (300–1200 nm) without compromising the outstanding passivation properties of the Al2O3 films. The upper limit of the surface recombination velocity (S eff,max) was evaluated at a carrier injection level corresponding to 1-sun illumination, which led to values below 10 cm/s. Reflectance values below 2% were measured on textured samples over the wavelength range of 450–1000 nm.

The Heteroepitaxy and Characterization of Inp and GaInP on Silicon for Solar Cell Applications

1990 ◽  
Vol 198 ◽  
Author(s):  
M.M. Al-Jassim ◽  
R.K. Ahrenkiel ◽  
M.W. Wanlass ◽  
J.M. Olson ◽  
S.M. Vernon
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Defect Density ◽  
Minority Carrier Lifetime ◽  
Buffer Layers ◽  
Threading Dislocation ◽  
Si Substrates ◽  
Threading Dislocation Density ◽  
Direct Growth

ABSTRACTInP and GaInP layers were heteroepitaxially grown on (100) Si substrates by atmospheric pressure MOCVD. TEM and photoluminescence (PL) were used to measure the defect density and the minority carrier lifetime in these structures. The direct growth of InP on Si resulted in either polycrystalline or heavily faulted single-crystal layers. The use of GaAs buffer layers in InP/Si structures gave rise to significantly improved morphology and reduced the threading dislocation density. The best InP/Si layers in this study were obtained by using GaAs-GaInAs graded buffers. Additionally, the growth of high quality GaInP on Si was demonstrated. The minority carrier lifetime of 7 ns in these layers is the highest of any III-V/Si semiconductor measured in our laboratory.

scholarly journals Structural and optical characterization of Mg-doped GaAs nanowires grown on GaAs and Si substrates

2013 ◽  
Vol 114 (18) ◽  
pp. 183508 ◽  
Author(s):  
B. P. Falcão ◽  
J. P. Leitão ◽  
M. R. Correia ◽  
M. R. Soares ◽  
F. M. Morales ◽  
...  
Keyword(s):  
Optical Characterization ◽  
Si Substrates ◽  
Gaas Nanowires ◽  
Mg Doped

Optical characterization of bulk mobility in 3C-SiC films grown on different orientation of Si substrates

2010 ◽  
Author(s):  
N. Piluso ◽  
A. Severino ◽  
M. Camarda ◽  
A. Canino ◽  
A. La Magna ◽  
...  
Keyword(s):  
Optical Characterization ◽  
Si Substrates ◽  
Sic Films
Sign in / Sign up

Export Citation Format

Share Document