Optical characterization of bulk mobility in 3C-SiC films grown on different orientation of Si substrates

2010 ◽  
Author(s):  
N. Piluso ◽  
A. Severino ◽  
M. Camarda ◽  
A. Canino ◽  
A. La Magna ◽  
...  
Keyword(s):  
Optical Characterization ◽  
Si Substrates ◽  
Sic Films

Optical characterization of stress in narrow GaAs stripes on patterned Si substrates

1989 ◽  
Vol 55 (4) ◽  
pp. 365-367 ◽  
Author(s):  
J. De Boeck ◽  
K. Deneffe ◽  
J. Christen ◽  
D. J. Arent ◽  
G. Borghs
Keyword(s):  
Optical Characterization ◽  
Si Substrates

scholarly journals Surface passivation and optical characterization of Al2O3/a-SiCx stacks on c-Si substrates

2013 ◽  
Vol 4 ◽  
pp. 726-731 ◽  
Author(s):  
Gema López ◽  
Pablo R Ortega ◽  
Cristóbal Voz ◽  
Isidro Martín ◽  
Mónica Colina ◽  
...  
Keyword(s):  
Wavelength Range ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Surface Recombination ◽  
Chemical Vapor ◽  
Optical Characterization ◽  
Surface Recombination Velocity ◽  
Carrier Injection ◽  
Si Substrates

The aim of this work is to study the surface passivation of aluminum oxide/amorphous silicon carbide (Al2O3/a-SiCx) stacks on both p-type and n-type crystalline silicon (c-Si) substrates as well as the optical characterization of these stacks. Al2O3 films of different thicknesses were deposited by thermal atomic layer deposition (ALD) at 200 °C and were complemented with a layer of a-SiCx deposited by plasma-enhanced chemical vapor deposition (PECVD) to form anti-reflection coating (ARC) stacks with a total thickness of 75 nm. A comparative study has been carried out on polished and randomly textured wafers. We have experimentally determined the optimum thickness of the stack for photovoltaic applications by minimizing the reflection losses over a wide wavelength range (300–1200 nm) without compromising the outstanding passivation properties of the Al2O3 films. The upper limit of the surface recombination velocity (S eff,max) was evaluated at a carrier injection level corresponding to 1-sun illumination, which led to values below 10 cm/s. Reflectance values below 2% were measured on textured samples over the wavelength range of 450–1000 nm.

scholarly journals Correction to: Optical characterization of SiC films grown on Si(111)

2019 ◽  
Vol 125 (9) ◽  
Author(s):  
Raghavendra Rao Juluri ◽  
John Lundsgaard Hansen ◽  
Peter Kjær Kristensen ◽  
Brian Julsgaard ◽  
Kjeld Pedersen
Keyword(s):  
Optical Characterization ◽  
Sic Films

Structural Characterization of Heteroepitaxial 3C-SiC

2012 ◽  
Vol 711 ◽  
pp. 27-30 ◽  
Author(s):  
Andrea Severino ◽  
Ruggero Anzalone ◽  
Massimo Camarda ◽  
Nicolò Piluso ◽  
Francesco La Via
Keyword(s):  
Growth Rate ◽  
Film Structure ◽  
Material Structure ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Transmission Electron ◽  
Crystallographic Defects ◽  
Sic Film ◽  
Sic Films

In this work, we focus our attention on the characterization of 3C-SiC films, grown within a CVD reactor, on Si substrates. It will be shown how the growth procedures influence the SiC film structure and quality with the growth rate used during the growth used as example. Evaluation of crystal structure has been conducted by X-Ray Diffraction (XRD), Raman microscopy and Transmission Electron Microscopy (TEM). Overall film quality increases if films are grown under low growth rate conditions, thanks also to an important reduction in the density of micro-twins. The trend of the full widths at half maximum (FWHMs) of SiC rocking curves, considered good ‘quality indicator’ as their broadenings are affected by crystallographic defects, as a function of 3C-SiC thickness shows a saturated regime for very thick films, due to the saturation of stacking fault density after 50 μm of growth. This work wants to suggest a reasonable path for the characterization of the material structure that can be useful, anywhere and in any time, to assess if the morphology and microstructure of our films are satisfactory and to drive towards the desired improvement.

scholarly journals Structural and optical characterization of Mg-doped GaAs nanowires grown on GaAs and Si substrates

2013 ◽  
Vol 114 (18) ◽  
pp. 183508 ◽  
Author(s):  
B. P. Falcão ◽  
J. P. Leitão ◽  
M. R. Correia ◽  
M. R. Soares ◽  
F. M. Morales ◽  
...  
Keyword(s):  
Optical Characterization ◽  
Si Substrates ◽  
Gaas Nanowires ◽  
Mg Doped

Optical characterization of SiC films grown on Si(111)

2018 ◽  
Vol 124 (12) ◽  
Author(s):  
Raghavendra Rao Juri ◽  
John Lundsgaard Hansen ◽  
Peter Kjær Kristensen ◽  
Brian Julsgaard ◽  
Kjeld Pedersen
Keyword(s):  
Optical Characterization ◽  
Sic Films

Optical characterization of MBE grown cubic and hexagonal SiC films on Si(111)

1998 ◽  
Vol 7 (9) ◽  
pp. 1385-1389 ◽  
Author(s):  
T Werninghaus ◽  
M Friedrich ◽  
V Cimalla ◽  
J Scheiner ◽  
R Goldhahn ◽  
...  
Keyword(s):  
Optical Characterization ◽  
Sic Films
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