scholarly journals Structural and optical characterization of Mg-doped GaAs nanowires grown on GaAs and Si substrates

2013 ◽  
Vol 114 (18) ◽  
pp. 183508 ◽  
Author(s):  
B. P. Falcão ◽  
J. P. Leitão ◽  
M. R. Correia ◽  
M. R. Soares ◽  
F. M. Morales ◽  
...  
Keyword(s):  
Optical Characterization ◽  
Si Substrates ◽  
Gaas Nanowires ◽  
Mg Doped

Optical characterization of stress in narrow GaAs stripes on patterned Si substrates

1989 ◽  
Vol 55 (4) ◽  
pp. 365-367 ◽  
Author(s):  
J. De Boeck ◽  
K. Deneffe ◽  
J. Christen ◽  
D. J. Arent ◽  
G. Borghs
Keyword(s):  
Optical Characterization ◽  
Si Substrates

scholarly journals Surface passivation and optical characterization of Al2O3/a-SiCx stacks on c-Si substrates

2013 ◽  
Vol 4 ◽  
pp. 726-731 ◽  
Author(s):  
Gema López ◽  
Pablo R Ortega ◽  
Cristóbal Voz ◽  
Isidro Martín ◽  
Mónica Colina ◽  
...  
Keyword(s):  
Wavelength Range ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Surface Recombination ◽  
Chemical Vapor ◽  
Optical Characterization ◽  
Surface Recombination Velocity ◽  
Carrier Injection ◽  
Si Substrates

The aim of this work is to study the surface passivation of aluminum oxide/amorphous silicon carbide (Al2O3/a-SiCx) stacks on both p-type and n-type crystalline silicon (c-Si) substrates as well as the optical characterization of these stacks. Al2O3 films of different thicknesses were deposited by thermal atomic layer deposition (ALD) at 200 °C and were complemented with a layer of a-SiCx deposited by plasma-enhanced chemical vapor deposition (PECVD) to form anti-reflection coating (ARC) stacks with a total thickness of 75 nm. A comparative study has been carried out on polished and randomly textured wafers. We have experimentally determined the optimum thickness of the stack for photovoltaic applications by minimizing the reflection losses over a wide wavelength range (300–1200 nm) without compromising the outstanding passivation properties of the Al2O3 films. The upper limit of the surface recombination velocity (S eff,max) was evaluated at a carrier injection level corresponding to 1-sun illumination, which led to values below 10 cm/s. Reflectance values below 2% were measured on textured samples over the wavelength range of 450–1000 nm.

Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires

2013 ◽  
Vol 113 (16) ◽  
pp. 164311 ◽  
Author(s):  
Yu. A. Pusep ◽  
H. Arakaki ◽  
C. A. de Souza ◽  
A. D. Rodrigues ◽  
C. M. Haapamaki ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Optical Characterization ◽  
Gaas Nanowires

Growth and Characterization of GaAs Nanowires Grown on Si Substrates

2017 ◽  
pp. 603-613
Author(s):  
Jung-Hyun Kang ◽  
Qiang Gao ◽  
Hark Hoe Tan ◽  
Hannah J. Joyce ◽  
Yong Kim ◽  
...  
Keyword(s):  
Si Substrates ◽  
Gaas Nanowires

Optical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition

2000 ◽  
Vol 88 (6) ◽  
pp. 3470-3478 ◽  
Author(s):  
G. Martínez-Criado ◽  
A. Cros ◽  
A. Cantarero ◽  
R. Dimitrov ◽  
O. Ambacher ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Chemical Vapor ◽  
Optical Characterization ◽  
Vapor Phase Deposition ◽  
Metalorganic Chemical ◽  
Mg Doped

scholarly journals Structural properties and optical characterization of flower-like Mg doped NiO

AIP Advances ◽  
2015 ◽  
Vol 5 (7) ◽  
pp. 077161 ◽  
Author(s):  
Ghazaleh Allaedini ◽  
Payam Aminayi ◽  
Siti Masrinda Tasirin
Keyword(s):  
Structural Properties ◽  
Optical Characterization ◽  
Mg Doped

Optical characterization of Si1−xGex nanodots grown on Si substrates via ultrathin SiO2 buffer layers

2007 ◽  
Vol 101 (11) ◽  
pp. 114312 ◽  
Author(s):  
C. D. Poweleit ◽  
C.-W. Hu ◽  
I. S. T. Tsong ◽  
J. Tolle ◽  
J. Kouvetakis
Keyword(s):  
Optical Characterization ◽  
Buffer Layers ◽  
Si Substrates
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