Optical characterization of stress in narrow GaAs stripes on patterned Si substrates

1989 ◽  
Vol 55 (4) ◽  
pp. 365-367 ◽  
Author(s):  
J. De Boeck ◽  
K. Deneffe ◽  
J. Christen ◽  
D. J. Arent ◽  
G. Borghs
Keyword(s):  
Optical Characterization ◽  
Si Substrates

scholarly journals Surface passivation and optical characterization of Al2O3/a-SiCx stacks on c-Si substrates

2013 ◽  
Vol 4 ◽  
pp. 726-731 ◽  
Author(s):  
Gema López ◽  
Pablo R Ortega ◽  
Cristóbal Voz ◽  
Isidro Martín ◽  
Mónica Colina ◽  
...  
Keyword(s):  
Wavelength Range ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Surface Recombination ◽  
Chemical Vapor ◽  
Optical Characterization ◽  
Surface Recombination Velocity ◽  
Carrier Injection ◽  
Si Substrates

The aim of this work is to study the surface passivation of aluminum oxide/amorphous silicon carbide (Al2O3/a-SiCx) stacks on both p-type and n-type crystalline silicon (c-Si) substrates as well as the optical characterization of these stacks. Al2O3 films of different thicknesses were deposited by thermal atomic layer deposition (ALD) at 200 °C and were complemented with a layer of a-SiCx deposited by plasma-enhanced chemical vapor deposition (PECVD) to form anti-reflection coating (ARC) stacks with a total thickness of 75 nm. A comparative study has been carried out on polished and randomly textured wafers. We have experimentally determined the optimum thickness of the stack for photovoltaic applications by minimizing the reflection losses over a wide wavelength range (300–1200 nm) without compromising the outstanding passivation properties of the Al2O3 films. The upper limit of the surface recombination velocity (S eff,max) was evaluated at a carrier injection level corresponding to 1-sun illumination, which led to values below 10 cm/s. Reflectance values below 2% were measured on textured samples over the wavelength range of 450–1000 nm.

scholarly journals Structural and optical characterization of Mg-doped GaAs nanowires grown on GaAs and Si substrates

2013 ◽  
Vol 114 (18) ◽  
pp. 183508 ◽  
Author(s):  
B. P. Falcão ◽  
J. P. Leitão ◽  
M. R. Correia ◽  
M. R. Soares ◽  
F. M. Morales ◽  
...  
Keyword(s):  
Optical Characterization ◽  
Si Substrates ◽  
Gaas Nanowires ◽  
Mg Doped

Optical characterization of Si1−xGex nanodots grown on Si substrates via ultrathin SiO2 buffer layers

2007 ◽  
Vol 101 (11) ◽  
pp. 114312 ◽  
Author(s):  
C. D. Poweleit ◽  
C.-W. Hu ◽  
I. S. T. Tsong ◽  
J. Tolle ◽  
J. Kouvetakis
Keyword(s):  
Optical Characterization ◽  
Buffer Layers ◽  
Si Substrates

Optical characterization of bulk mobility in 3C-SiC films grown on different orientation of Si substrates

2010 ◽  
Author(s):  
N. Piluso ◽  
A. Severino ◽  
M. Camarda ◽  
A. Canino ◽  
A. La Magna ◽  
...  
Keyword(s):  
Optical Characterization ◽  
Si Substrates ◽  
Sic Films

Electron microscope characterization of MOCVD-grown gap layers on Si

1986 ◽  
Vol 44 ◽  
pp. 724-725
Author(s):  
K.M. Jones ◽  
M.M. Al-Jassim ◽  
J.M. Olson
Keyword(s):  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Lattice Match ◽  
Si Substrates ◽  
Metal Organic ◽  
Good Lattice ◽  
Antiphase Domains

The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).

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