Intersubband emission and carrier dynamics in GaAs/AlGaAs tunnel-coupled quantum wells after ultrafast optical pumping

2007 ◽  
Author(s):  
Stefan Hanna ◽  
Wolfgang Silz ◽  
Vadim Yu. Panevin ◽  
Vadim A. Shalygin ◽  
Leonid E. Vorobjev ◽  
...  
1996 ◽  
Vol 450 ◽  
Author(s):  
J. E. Manzoli ◽  
O. Hipólito

ABSTRACTWe propose a semiconductor heterostructure consisting of six coupled quantum wells of GaAs plus a larger one, all inside Al(x)Ga(l−x)As, x=0.35. Our simulation prevents that the localized electronic eigen-state at the large well, the Tamm state, will oscillate when the voltage applied across these “finite superlattice” varies fast. We include exchange and correlation effects in the local density approximation and made the self-consistent calculations to the electrons at 77K varying the voltage in a gate contact of the device. We obtain the effective potential, the sub-bands (mini-bands) and respective electronic densities which enable us to simulate the temporal evolution of an electronic wave-packet when the gate-voltage is switched fast. Such a switching turns the Tamm eigen-state in a wave-packet. By the simulation we conclude that this wave-packet oscillates a Tera-Hertz frequency that can emit electromagnetic radiation as a charge oscillator. We estimate the finite superlattice capacitance and it confirms the possibility of changing the Hamiltonian faster than the period of the oscillation.


2013 ◽  
Vol 06 (02) ◽  
pp. 1350021 ◽  
Author(s):  
GUO-EN WENG ◽  
BAO-PING ZHANG ◽  
MING-MING LIANG ◽  
XUE-QIN LV ◽  
JIANG-YONG ZHANG ◽  
...  

Optical properties and carrier dynamics of InGaN/GaN asymmetric coupled quantum wells (ACQWs) are studied by excitation-power-dependent photoluminescence (PL), photoreflectance (PR) and time-resolved PL (TRPL) experiments. Under weak excitations, only the emission from the widest well is observed due to the tunneling from narrower to wider wells. Under strong excitations, the carrier distribution becomes more uniform and an enhanced emission from the mid well (2.5 nm well) is observed. Dependence of the PL intensity on excitation power is well explained by a rate equation model. The energy levels in the ACQW structure are clearly revealed by PR measurements and are in good agreement with calculations. Our results indicate that the enhanced emission from the mid well is ascribed to "reverse tunneling" from 3.0 to 2.5 nm well, which is confirmed by TRPL experiments.


1992 ◽  
Author(s):  
Mark I. Stockman ◽  
Leonid S. Muratov ◽  
Thomas F. George

2015 ◽  
Vol 87 ◽  
pp. 131-136 ◽  
Author(s):  
A. Tiutiunnyk ◽  
V. Tulupenko ◽  
V. Akimov ◽  
R. Demediuk ◽  
A.L. Morales ◽  
...  

1994 ◽  
Vol 37 (4-6) ◽  
pp. 721-724 ◽  
Author(s):  
T.S. Turner ◽  
P.M. Martin ◽  
L. Eaves ◽  
H.B. Evans ◽  
P.A. Harrison ◽  
...  

2008 ◽  
Vol 104 (6) ◽  
pp. 064321
Author(s):  
Genhua Liu ◽  
Yonghai Chen ◽  
Yu Liu ◽  
Caihong Jia ◽  
Zhanguo Wang

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