Spin-dependent transport and spin polarization in coupled quantum wells

2008 ◽  
Vol 104 (6) ◽  
pp. 064321
Author(s):  
Genhua Liu ◽  
Yonghai Chen ◽  
Yu Liu ◽  
Caihong Jia ◽  
Zhanguo Wang
Keyword(s):  
Quantum Wells ◽  
Spin Polarization ◽  
Coupled Quantum Wells ◽  
Spin Dependent Transport ◽  
Dependent Transport

scholarly journals Spin Dependent Transport through Driven Magnetic System with Aubry-Andre-Harper Modulation

2021 ◽  
Vol 11 (5) ◽  
pp. 2309
Author(s):  
Arpita Koley ◽  
Santanu K. Maiti ◽  
Judith Helena Ojeda Silva ◽  
David Laroze
Keyword(s):  
Spin Polarization ◽  
Magnetic System ◽  
Magnetic Moments ◽  
Tight Binding ◽  
Irradiation Effect ◽  
Spin Dependent Transport ◽  
Magnetic Chain ◽  
Polarization Coefficient ◽  
Dependent Transport ◽  
Energy Channels

In this work, we put forward a prescription of achieving spin selective electron transfer by means of light irradiation through a tight-binding (TB) magnetic chain whose site energies are modulated in the form of well known Aubry–Andre–Harper (AAH) model. The interaction of itinerant electrons with local magnetic moments in the magnetic system provides a misalignment between up and down spin channels which leads to a finite spin polarization (SP) upon locating the Fermi energy in a suitable energy zone. Both the energy channels are significantly affected by the irradiation which is directly reflected in degree of spin polarization as well as in its phase. We include the irradiation effect through Floquet ansatz and compute spin polarization coefficient by evaluating transmission probabilities using Green’s function prescription. Our analysis can be utilized to investigate spin dependent transport phenomena in any driven magnetic system with quasiperiodic modulations.

Spin-dependent transport of holes in silicon quantum wells confined by superconductor barriers

2008 ◽  
Vol 468 (7-10) ◽  
pp. 840-843 ◽  
Author(s):  
Nikolay T. Bagraev ◽  
Wolfgang Gehlhoff ◽  
Leonid E. Klyachkin ◽  
Andrey A. Kudryavtsev ◽  
Anna M. Malyarenko ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spin Dependent Transport ◽  
Dependent Transport

scholarly journals Spin-Dependent Transport Of Holes In Silicon Quantum Wells Confined By Superconductor Barriers

2010 ◽  
Author(s):  
N. T. Bagraev ◽  
W. Gehlhoff ◽  
L. E. Klyachkin ◽  
A. A. Kudryavtsev ◽  
A. M. Malyarenko ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spin Dependent Transport ◽  
Dependent Transport

scholarly journals Electric Field Controlled Itinerant Carrier Spin Polarization in Ferromagnetic Semiconductors

2021 ◽  
Vol 2021 ◽  
pp. 1-5
Author(s):  
Gezahegn Assefa
Keyword(s):  
Electric Field ◽  
Spin Polarization ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Ferromagnetic Semiconductors ◽  
Ferromagnetic Metals ◽  
Spin Dependent Transport ◽  
Diluted Magnetic ◽  
Dependent Transport ◽  
Electrical Manipulation

Electric field control of magnetic properties has been achieved across a number of different material systems. In diluted magnetic semiconductors (DMSs), ferromagnetic metals, multiferroics, etc., electrical manipulation of magnetism has been observed. Here, we study the effect of an electric field on the carrier spin polarization in DMSs ( GaAsMn ); in particular, emphasis is given to spin-dependent transport phenomena. In our system, the interaction between the carriers and the localized spins in the presence of electric field is taken as the main interaction. Our results show that the electric field plays a major role on the spin polarization of carriers in the system. This is important for spintronics application.

scholarly journals High Temperature Quantum Kinetic Effects in Silicon Nanosandwiches

2018 ◽  
Vol 52 (4) ◽  
pp. 473
Author(s):  
N.T. Bagraev ◽  
L.E. Klyachkin ◽  
V.S. Khromov ◽  
A.M. Malyarenko ◽  
V.A. Mashkov ◽  
...  
Keyword(s):  
High Temperature ◽  
Quantum Wells ◽  
Sandwich Structure ◽  
Quantum Hall ◽  
Electron Interaction ◽  
Semiconductor Quantum Wells ◽  
Spin Dependent Transport ◽  
Composite Bosons ◽  
Kinetic Effects ◽  
Dependent Transport

AbstractThe negative- U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport, with the reduction of the electron-electron interaction. The aforesaid promotes also the creation of composite bosons and fermions by the capture of single magnetic flux quanta on the edge channels under the conditions of low sheet density of carriers, thus opening new opportunities for the registration of the high temperature de Haas-van Alphen, 300 K, quantum Hall, 77 K, effects as well as quantum conductance staircase in the silicon sandwich structure.

Electron-spin polarization in both magnetically and electrically modulated nanostructures

2005 ◽  
Vol 83 (3) ◽  
pp. 219-227
Author(s):  
Mao-Wang Lu
Keyword(s):  
Spin Polarization ◽  
Electron Spin ◽  
High Energy ◽  
Electron Spin Polarization ◽  
Spintronic Devices ◽  
Spin Dependent Transport ◽  
73.40 Gk ◽  
Spin Polarization Effect ◽  
Dependent Transport ◽  
Electric Barrier

We investigate theoretically the spin-dependent transport properties of electrons in realistic magnetic-electric-barrier (MEB) nanostructures produced by the deposition, onto a heterostructure, of a metallic ferromagnetic stripe. We find the degree of electron-spin polarization to be closely tied to the voltage applied to the stripe, despite the fact that this voltage in itself induces no spin-polarization effect. As a positive (negative) voltage is applied, the electron-spin polarization shifts in the low- (high-) energy direction and increases (decreases). Our results imply that the degree of electron-spin polarization can be tuned through the applied voltage. This implication might prove useful in the design and application of spintronic devices based on magnetic-barrier nanostructures. PACS Nos.: 73.40.Gk, 73.23.-b, 75.70.Cn

Bias-induced reconstruction of hybrid interface states in magnetic molecular junctions

2021 ◽  
Author(s):  
Lingmei Zhang ◽  
Yuanyuan Miao ◽  
Zhipeng Cao ◽  
Shuai Qiu ◽  
Guangping Zhang ◽  
...  
Keyword(s):  
Spin Polarization ◽  
Energy Shift ◽  
Interface States ◽  
Molecular Junctions ◽  
Large Current ◽  
Spin Dependent Transport ◽  
Dependent Transport ◽  
Hybrid Interface ◽  
Current Spin Polarization

Abstract Based on first-principles calculations, the bias-induced evolution of hybrid interface states in π-conjugated tricene and insulating octane magnetic molecular junctions is investigated. Obvious bias-induced splitting and energy shift of the spin-resolved hybrid interface states are observed in the two junctions. The recombination of the shifted hybrid interface states from different interfaces makes the spin polarization around the Fermi energy strongly bias dependent. The transport calculations demonstrate that in the π-conjugated tricene junction, the bias-dependent hybrid interface states work efficiently for large current, current spin polarization, and distinct tunneling magnetoresistance. But in the insulating octane junction, the spin-dependent transport via the hybrid interface states is inhibited, which is only slightly disturbed by the bias. This work reveals the phenomenon of bias-induced reconstruction of hybrid interface states in molecular spinterface devices, and the underlying role of molecular conjugated orbitals in the transport ability of hybrid interface states.

ELECTRON-SPIN POLARIZATION IN BOTH MAGNETICALLY AND ELECTRICALLY-MODULATED NANOSTRUCTURES

2005 ◽  
Vol 12 (01) ◽  
pp. 67-74
Author(s):  
MAO-WANG LU
Keyword(s):  
Spin Polarization ◽  
Electron Spin ◽  
Applied Voltage ◽  
High Energy ◽  
Electron Spin Polarization ◽  
Spin Dependent Transport ◽  
Positive Voltage ◽  
Spin Polarization Effect ◽  
Dependent Transport ◽  
Electric Barrier

We theoretically investigate the spin-dependent transport properties of electrons in realistic magnetic-electric barrier nanostructures, which are produced by the deposition, on top of a heterostructure, of a metallic ferromagnetic stripe with an applied voltage. The degree of the electron-spin polarization is found to be closely associated with this voltage, although the use of applied voltage itself induces no spin polarization effect. As a positive voltage is applied to the stripe the electron-spin polarization shifts towards the low-energy region and increases; it shifts towards the high-energy direction and reduces for a negative applied voltage. These results shown in this work imply that the degree of electron-spin polarization can be tuned by means of an applied voltage on the stripes of system, which may result in a practical voltage-controlled spin filter.

Theory of Light-Induced Drift of Electrons in Coupled Quantum Wells

1992 ◽  
Author(s):  
Mark I. Stockman ◽  
Leonid S. Muratov ◽  
Thomas F. George
Keyword(s):  
Quantum Wells ◽  
Coupled Quantum Wells

scholarly journals Strain Investigation on Spin-Dependent Transport Properties of γ-Graphyne Nanoribbon Between Gold Electrodes

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Yun Li ◽  
Xiaobo Li ◽  
Shidong Zhang ◽  
Liemao Cao ◽  
Fangping Ouyang ◽  
...  
Keyword(s):  
Transport Properties ◽  
High Performance ◽  
Density Functional ◽  
Strain Engineering ◽  
Molecular Junctions ◽  
Spin Splitting ◽  
Functional Theory ◽  
Spin Dependent Transport ◽  
The Density Functional Theory ◽  
Dependent Transport

AbstractStrain engineering has become one of the effective methods to tune the electronic structures of materials, which can be introduced into the molecular junction to induce some unique physical effects. The various γ-graphyne nanoribbons (γ-GYNRs) embedded between gold (Au) electrodes with strain controlling have been designed, involving the calculation of the spin-dependent transport properties by employing the density functional theory. Our calculated results exhibit that the presence of strain has a great effect on transport properties of molecular junctions, which can obviously enhance the coupling between the γ-GYNR and Au electrodes. We find that the current flowing through the strained nanojunction is larger than that of the unstrained one. What is more, the length and strained shape of the γ-GYNR serves as the important factors which affect the transport properties of molecular junctions. Simultaneously, the phenomenon of spin-splitting occurs after introducing strain into nanojunction, implying that strain engineering may be a new means to regulate the electron spin. Our work can provide theoretical basis for designing of high performance graphyne-based devices in the future.

Sign in / Sign up

Export Citation Format

Share Document