Ultrafast optical studies of carrier dynamics at semiconductor interfaces. Final report

1998 ◽  
Author(s):  
Keyword(s):  
Carrier Dynamics ◽  
Final Report ◽  
Optical Studies ◽  
Ultrafast Optical ◽  
Semiconductor Interfaces

Intersubband emission and carrier dynamics in GaAs/AlGaAs tunnel-coupled quantum wells after ultrafast optical pumping

2007 ◽  
Author(s):  
Stefan Hanna ◽  
Wolfgang Silz ◽  
Vadim Yu. Panevin ◽  
Vadim A. Shalygin ◽  
Leonid E. Vorobjev ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Pumping ◽  
Carrier Dynamics ◽  
Coupled Quantum Wells ◽  
Ultrafast Optical

Optical Studies of Nonequilibrium Carrier Dynamics in Highly Excited 4H-SiC Epitaxial Layers

2005 ◽  
pp. 413-416 ◽  
Author(s):  
K. Neimontas ◽  
R. Aleksiejūnas ◽  
M. Sūdžius ◽  
Kestutis Jarašiūnas ◽  
J.Peder Bergman
Keyword(s):  
Carrier Dynamics ◽  
Nonequilibrium Carrier ◽  
Epitaxial Layers ◽  
Optical Studies

Ultrafast carrier dynamics in laser-excited materials: subpicosecond optical studies

1999 ◽  
Vol 68 (3) ◽  
pp. 459-463 ◽  
Author(s):  
F. Quéré ◽  
S. Guizard ◽  
P. Martin ◽  
G. Petite ◽  
O. Gobert ◽  
...  
Keyword(s):  
Carrier Dynamics ◽  
Optical Studies ◽  
Ultrafast Carrier Dynamics ◽  
Ultrafast Carrier

Ultrafast carrier dynamics in LT-GaAs doped with Si delta layers

2017 ◽  
Vol 31 (27) ◽  
pp. 1750195 ◽  
Author(s):  
D. I. Khusyainov ◽  
C. Dekeyser ◽  
A. M. Buryakov ◽  
E. D. Mishina ◽  
G. B. Galiev ◽  
...  
Keyword(s):  
Low Temperature ◽  
Carrier Lifetime ◽  
Carrier Dynamics ◽  
High Resistivity ◽  
Ultrafast Carrier Dynamics ◽  
Si Doping ◽  
Ultrafast Optical ◽  
Donor And Acceptor ◽  
Ultrafast Carrier ◽  
Lt Gaas

We characterized the ultrafast properties of LT-GaAs doped with silicon [Formula: see text]-layers and introduced delta-doping ([Formula: see text]-doping) as efficient method for enhancing the properties of GaAs-based structures which can be useful for terahertz (THz) antenna, ultrafast switches and other high frequency applications. Low temperature grown GaAs (LT-GaAs) became one of the most promising materials for ultrafast optical and THz devices due to its short carrier lifetime and high carrier mobility. Low temperature growth leads to a large number of point defects and an excess of arsenic. Annealing of LT-GaAs creates high resistivity through the formation of As-clusters, which appear due to the excess of arsenic. High resistivity is very important for THz antennas so that voltage can be applied without the risk of breakdown. With [Formula: see text]-Si doping, control of As-clusters is possible, since after annealing, clusters align in the plane where the [Formula: see text]-doping occurs. In this paper, we compare the properties of LT-GaAs-based planar structures with and without [Formula: see text]-Si doping and subsequent annealing. We used pump-probe transient reflectivity as a probe for ultrafast carrier dynamics in LT-GaAs. The results of the experiment were interpreted using the Ortiz model and show that the [Formula: see text]-Si doping increases deep donor and acceptor concentrations and decreases the photoinduced carrier lifetime as compared with LT-GaAs with same growth and annealing temperatures, but without doping.

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