Fabrication of Ta2O5∕GeNx gate insulator stack for Ge metal-insulator-semiconductor structures by electron-cyclotron-resonance plasma nitridation and sputtering deposition techniques

2007 ◽  
Vol 90 (14) ◽  
pp. 142114 ◽  
Author(s):  
Yohei Otani ◽  
Yasuhiro Itayama ◽  
Takuo Tanaka ◽  
Yukio Fukuda ◽  
Hiroshi Toyota ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Gate Insulator ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Sputtering Deposition ◽  
Plasma Nitridation ◽  
Semiconductor Structures ◽  
Deposition Techniques ◽  
Resonance Plasma

Conductance Transients Study of Slow Traps in Al/SiNx:H/Si and Al/SiNx:H/InP Metal-Insulator-Semiconductor Structures

1997 ◽  
Vol 500 ◽  
Author(s):  
S. Dueñas ◽  
R. Peláez ◽  
E. Castán ◽  
J. Barbolla ◽  
I. Mártil ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Electron Cyclotron Resonance ◽  
Deep Level ◽  
Perfect Agreement ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Interfaces ◽  
Interfacial Defects ◽  
Transient Spectroscopy ◽  
Resonance Plasma

ABSTRACTWe have obtained Al/SiNx:H/Si and Al/SiNx:H/InP Metal-Insulator-Semiconductor devices by directly depositing silicon nitride thin films on silicon and indium phosphide wafers by the Electron Cyclotron Resonance Plasma method at 200°C. The electrical properties of the structures were first analyzed by Capacitance-Voltage measurements and Deep-Level Transient Spectroscopy (DLTS). Some discrepancies in the absolute value of the interface trap densities were found. Later on, Admittance measurements were carried out and room and low temperature conductance transients in the silicon nitride/semiconductor interfaces were found. The shape of the conductance transients varied with the frequency and temperature at which they were obtained. This behavior, as well as the previously mentioned discrepancies, are explained in terms of a disorder-induced gap-state continuum model for the interfacial defects. A perfect agreement between experiment and theory is obtained proving the validity of the model.

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