Good quality Al/SiNx:H/InP metal-insulator-semiconductor devices obtained with electron cyclotron resonance plasma method
1998 ◽
Vol 317
(1-2)
◽
pp. 116-119
◽
1996 ◽
Vol 73
(3)
◽
pp. 487-502
◽
1995 ◽
Vol 13
(5)
◽
pp. 2013
◽
2006 ◽
Vol 45
(9B)
◽
pp. 7345-7350
◽