Investigation of drain current transient in BCB- and SiN-passivated Al0.25Ga0.75As∕In0.2Ga0.8As pseudomorphic high electron mobility transistors

Chee Leong Tan; Hong Wang; K. Radhakrishnan

doi:10.1063/1.2431766

Investigation of drain current transient in BCB- and SiN-passivated Al0.25Ga0.75As∕In0.2Ga0.8As pseudomorphic high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.2431766 ◽

2007 ◽

Vol 90 (3) ◽

pp. 033501 ◽

Cited By ~ 3

Author(s):

Chee Leong Tan ◽

Hong Wang ◽

K. Radhakrishnan

Keyword(s):

Electron Mobility ◽

Drain Current ◽

High Electron Mobility Transistors ◽

Current Transient ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Analysis of Drain Current Transient Response of Gate Pulse Voltage in AlGaN / GaN High Electron Mobility Transistors

Advances in Science Technology and Engineering Systems Journal ◽

10.25046/aj030526 ◽

2018 ◽

Vol 3 (5) ◽

pp. 216-219

Author(s):

Hirohisa Taguchi ◽

Kazuto Akahori ◽

Takuma Shimazu ◽

Honoka Tanabe

Keyword(s):

Transient Response ◽

Electron Mobility ◽

Drain Current ◽

High Electron Mobility Transistors ◽

Pulse Voltage ◽

Current Transient ◽

High Electron ◽

High Electron Mobility ◽

Gate Pulse ◽

Electron Mobility Transistors

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Temperature dependence of drain current transient response by gate pulse voltage in AlGaN / GaN high electron mobility transistors

TENCON 2017 - 2017 IEEE Region 10 Conference ◽

10.1109/tencon.2017.8228128 ◽

2017 ◽

Cited By ~ 1

Author(s):

Akiyoshi Otake ◽

Soya Nakano ◽

Kimihirho Yamanaka ◽

Hirohisa Taguchi

Keyword(s):

Temperature Dependence ◽

Transient Response ◽

Electron Mobility ◽

Drain Current ◽

High Electron Mobility Transistors ◽

Pulse Voltage ◽

Current Transient ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Investigation of drain current transient in InP-based high electron mobility transistors (HEMTs)

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004. ◽

10.1109/iciprm.2004.1442649 ◽

2005 ◽

Author(s):

Chee-Leong Tan ◽

Hong Wang ◽

K. Radhakrishnan ◽

Wai-Chye Cheong ◽

Jing Bu

Keyword(s):

Electron Mobility ◽

Drain Current ◽

High Electron Mobility Transistors ◽

Current Transient ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Influence of gate-leakage current on drain current collapse of unpassivated GaN∕AlGaN∕GaN high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.1953873 ◽

2005 ◽

Vol 86 (25) ◽

pp. 253511 ◽

Cited By ~ 21

Author(s):

P. Kordoš ◽

J. Bernát ◽

M. Marso ◽

H. Lüth ◽

F. Rampazzo ◽

...

Keyword(s):

Leakage Current ◽

Electron Mobility ◽

Drain Current ◽

High Electron Mobility Transistors ◽

High Electron ◽

Gate Leakage Current ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2010.2087339 ◽

2011 ◽

Vol 58 (1) ◽

pp. 132-140 ◽

Cited By ~ 249

Author(s):

Jungwoo Joh ◽

Jesús A. del Alamo

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Current Transient ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

A Current

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Investigation of abrupt degradation of drain current caused by under-gate crack in AlGaN/GaN high electron mobility transistors during high temperature operation stress

Journal of Applied Physics ◽

10.1063/1.4931891 ◽

2015 ◽

Vol 118 (12) ◽

pp. 124511 ◽

Cited By ~ 5

Author(s):

Chang Zeng ◽

XueYang Liao ◽

RuGuan Li ◽

YuanSheng Wang ◽

Yiqiang Chen ◽

...

Keyword(s):

High Temperature ◽

Electron Mobility ◽

Drain Current ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

High Temperature Operation

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Determination of Defect Densities in High Electron Mobility Transistors Using Current Transient DLTS

10.1063/1.3666253 ◽

2011 ◽

Author(s):

John Palma ◽

Samson Mil'shtein ◽

Jisoon Ihm ◽

Hyeonsik Cheong

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Current Transient ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Defect Densities

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Hydrogen-Induced Reversible Changes in Drain Current of Pt-Gated AlGaN/GaN High Electron Mobility Transistors (HEMT)

ECS Meeting Abstracts ◽

10.1149/ma2005-02/21/816 ◽

2005 ◽

Keyword(s):

Electron Mobility ◽

Drain Current ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Improved Characterization and Accurate Modelling of Drain Current Derivatives of InP Based High Electron Mobility Transistors Devices

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2019.16317 ◽

2019 ◽

Vol 19 (7) ◽

pp. 3887-3892

Author(s):

Muhammad Asif ◽

Wang Xi ◽

Zhao Hua ◽

Ding Peng ◽

Saeedullah Jan ◽

...

Keyword(s):

Electron Mobility ◽

Drain Current ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Derivatives Of

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Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy

Applied Physics Letters ◽

10.1063/1.4813862 ◽

2013 ◽

Vol 103 (3) ◽

pp. 033509 ◽

Cited By ~ 45

Author(s):

A. Sasikumar ◽

A. R. Arehart ◽

S. Martin-Horcajo ◽

M. F. Romero ◽

Y. Pei ◽

...

Keyword(s):

Electron Mobility ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Drain Current ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Transient Spectroscopy

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