Investigation of abrupt degradation of drain current caused by under-gate crack in AlGaN/GaN high electron mobility transistors during high temperature operation stress

2015 ◽  
Vol 118 (12) ◽  
pp. 124511 ◽  
Author(s):  
Chang Zeng ◽  
XueYang Liao ◽  
RuGuan Li ◽  
YuanSheng Wang ◽  
Yiqiang Chen ◽  
...  
Keyword(s):  
High Temperature ◽  
Electron Mobility ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
High Temperature Operation

scholarly journals High Temperature Operation of Al0.45Ga0.55N/Al0.30Ga0.70N High Electron Mobility Transistors

2017 ◽  
Vol 6 (11) ◽  
pp. S3010-S3013 ◽  
Author(s):  
Albert G. Baca ◽  
Andrew M. Armstrong ◽  
Andrew A. Allerman ◽  
Brianna A. Klein ◽  
Erica A. Douglas ◽  
...  
Keyword(s):  
High Temperature ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
High Temperature Operation

Integrated GaN/AlGaN/GaN HEMTs with Preciously Controlled Resistance on Silicon Substrate Fabricated by Ion Implantation

2008 ◽  
Vol 1068 ◽  
Author(s):  
Kazuki Nomoto ◽  
Tomo Ohsawa ◽  
Masataka Satoh ◽  
Tohru Nakamura
Keyword(s):  
Ion Implantation ◽  
Electron Mobility ◽  
Silicon Substrate ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Gan Hemts ◽  
Ion Implanted

ABSTRACTMultiple ion-implanted GaN/AlGaN/GaN high electron-mobility transistors (HEMTs) and preciously controlled ion-implanted resistors integrated on silicon substrate are reported. Using ion implantation into source/drain (S/D) regions, the performances were significantly improved. On-resistance reduced from 10.3 to 3.5 Ω•mm. Saturation drain current and maximum transconductance increased from 390 to 650 mA/mm and from 130 to 230 mS/mm. Measured transfer curve shows that I/O gain of 4.5 can be obtained at Vdd = 10 V.

Sign in / Sign up

Export Citation Format

Share Document