Prediction of the thermal annealing of thick oxide metal-oxide-semiconductor dosimeters irradiated in a harsh radiation environment

F. Ravotti; M. Glaser; F. Saigné; L. Dusseau; G. Sarrabayrouse

doi:10.1063/1.2337084

Prediction of the thermal annealing of thick oxide metal-oxide-semiconductor dosimeters irradiated in a harsh radiation environment

Applied Physics Letters ◽

10.1063/1.2337084 ◽

2006 ◽

Vol 89 (8) ◽

pp. 083503 ◽

Cited By ~ 4

Author(s):

F. Ravotti ◽

M. Glaser ◽

F. Saigné ◽

L. Dusseau ◽

G. Sarrabayrouse

Keyword(s):

Metal Oxide ◽

Thermal Annealing ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Radiation Environment

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Experimental determination of the frequency factor of thermal annealing processes in metal–oxide–semiconductor gate-oxide structures

Journal of Applied Physics ◽

10.1063/1.365721 ◽

1997 ◽

Vol 82 (8) ◽

pp. 4102-4107 ◽

Cited By ~ 20

Author(s):

F. Saigné ◽

L. Dusseau ◽

L. Albert ◽

J. Fesquet ◽

J. Gasiot ◽

...

Keyword(s):

Metal Oxide ◽

Experimental Determination ◽

Thermal Annealing ◽

Gate Oxide ◽

Frequency Factor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Effect of thermal annealing and oxygen partial pressure on the swelling of HfO2/SiO2/Si metal-oxide-semiconductor structure grown by rf sputtering: A synchrotron x-ray reflectivity study

Applied Physics Letters ◽

10.1063/1.4896157 ◽

2014 ◽

Vol 105 (11) ◽

pp. 113511 ◽

Cited By ~ 8

Author(s):

Debaleen Biswas ◽

Sk Abdul Kader Md Faruque ◽

Anil Kumar Sinha ◽

Anuj Upadhyay ◽

Supratic Chakraborty

Keyword(s):

Metal Oxide ◽

Oxygen Partial Pressure ◽

Partial Pressure ◽

Thermal Annealing ◽

Rf Sputtering ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

X Ray ◽

Metal Oxide Semiconductor Structure

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Influence of rapid thermal annealing on the electrical characteristics of GaAs metal-oxide-semiconductor structures with a double oxide layer

Thin Solid Films ◽

10.1016/0040-6090(94)06377-x ◽

1995 ◽

Vol 257 (1) ◽

pp. 110-115 ◽

Cited By ~ 6

Author(s):

G. Eftekhari

Keyword(s):

Metal Oxide ◽

Oxide Layer ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Double Oxide ◽

Semiconductor Structures

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Effect of Thermal Annealing on the GaN Metal-Oxide-Semiconductor Capacitors with Gallium Oxide Gate Layer

Journal of The Electrochemical Society ◽

10.1149/1.3489264 ◽

2010 ◽

Vol 157 (11) ◽

pp. H1019 ◽

Cited By ~ 9

Author(s):

Ming-Lun Lee ◽

T. S. Mue ◽

J. K. Sheu ◽

K. H. Chang ◽

S. J. Tu ◽

...

Keyword(s):

Metal Oxide ◽

Thermal Annealing ◽

Gallium Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Layer

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Rapid thermal annealing and performance of Al2O3/GaN metal-oxide-semiconductor structures

2006 International Conference on Advanced Semiconductor Devices and Microsystems ◽

10.1109/asdam.2006.331188 ◽

2006 ◽

Author(s):

K. Cico ◽

J. Kuzmik ◽

D. Gregusova ◽

T. Lalinsky ◽

A. Georgakilas ◽

...

Keyword(s):

Metal Oxide ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

And Performance

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Thermal annealing of interface traps and trapped charges induced by irradiation in oxides of 3C-SiC metal-oxide-semiconductor structures

Materials Science and Engineering B ◽

10.1016/s0921-5107(97)00034-2 ◽

1997 ◽

Vol 47 (3) ◽

pp. 218-223

Author(s):

M. Yoshikawa ◽

N. Nemoto ◽

H. Itoh ◽

I. Nashiyama ◽

H. Okumura ◽

...

Keyword(s):

Metal Oxide ◽

Thermal Annealing ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

Semiconductor Structures

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Thermal SiO2 gated Ge metal-oxide-semiconductor capacitor on Si substrate formed by thin amorphous Ge oxidation and thermal annealing

Applied Physics Letters ◽

10.1063/1.2976327 ◽

2008 ◽

Vol 93 (8) ◽

pp. 083506 ◽

Cited By ~ 1

Author(s):

Yung-Hsien Wu ◽

Jia-Rong Wu ◽

Yuan-Sheng Lin ◽

Min-Lin Wu

Keyword(s):

Metal Oxide ◽

Thermal Annealing ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Si Substrate ◽

Metal Oxide Semiconductor Capacitor

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CO2 laser rapid-thermal-annealing SiOx based metal-oxide-semiconductor light emitting diode

Applied Physics Letters ◽

10.1063/1.2769962 ◽

2007 ◽

Vol 91 (7) ◽

pp. 072103 ◽

Cited By ~ 21

Author(s):

Gong-Ru Lin ◽

Chun-Jung Lin

Keyword(s):

Metal Oxide ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Co2 Laser ◽

Light Emitting Diode ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Light Emitting

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Reliability of partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistor under the ionizing radiation environment

Acta Physica Sinica ◽

10.7498/aps.64.086101 ◽

2015 ◽

Vol 64 (8) ◽

pp. 086101

Author(s):

Zhou Hang ◽

Cui Jiang-Wei ◽

Zheng Qi-Wen ◽

Guo Qi ◽

Ren Di-Yuan ◽

...

Keyword(s):

Ionizing Radiation ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Radiation Environment ◽

Effect Transistor

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Dopant Redistribution during Rapid Thermal Annealing in a Self-Aligned Polysilicon Emitter Bipolar Structure Compatible with a Complementary Metal-Oxide-Semiconductor Technology

phys stat sol (a) ◽

10.1002/pssa.2211450107 ◽

1994 ◽

Vol 145 (1) ◽

pp. 77-88 ◽

Cited By ~ 5

Author(s):

A. Merabet ◽

C. Gontrand

Keyword(s):

Metal Oxide ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Bipolar Structure ◽

Dopant Redistribution ◽

Polysilicon Emitter

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