Effect of Thermal Annealing on the GaN Metal-Oxide-Semiconductor Capacitors with Gallium Oxide Gate Layer

Ming-Lun Lee; T. S. Mue; J. K. Sheu; K. H. Chang; S. J. Tu; T. H. Hsueh

doi:10.1149/1.3489264

Effect of Thermal Annealing on the GaN Metal-Oxide-Semiconductor Capacitors with Gallium Oxide Gate Layer

Journal of The Electrochemical Society ◽

10.1149/1.3489264 ◽

2010 ◽

Vol 157 (11) ◽

pp. H1019 ◽

Cited By ~ 9

Author(s):

Ming-Lun Lee ◽

T. S. Mue ◽

J. K. Sheu ◽

K. H. Chang ◽

S. J. Tu ◽

...

Keyword(s):

Metal Oxide ◽

Thermal Annealing ◽

Gallium Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Layer

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Experimental determination of the frequency factor of thermal annealing processes in metal–oxide–semiconductor gate-oxide structures

Journal of Applied Physics ◽

10.1063/1.365721 ◽

1997 ◽

Vol 82 (8) ◽

pp. 4102-4107 ◽

Cited By ~ 20

Author(s):

F. Saigné ◽

L. Dusseau ◽

L. Albert ◽

J. Fesquet ◽

J. Gasiot ◽

...

Keyword(s):

Metal Oxide ◽

Experimental Determination ◽

Thermal Annealing ◽

Gate Oxide ◽

Frequency Factor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with ZnO gate layer and (NH4)2Sx surface treatment

Applied Physics Letters ◽

10.1063/1.3467056 ◽

2010 ◽

Vol 97 (3) ◽

pp. 032107 ◽

Cited By ~ 21

Author(s):

Ya-Lan Chiou ◽

Chi-Sen Lee ◽

Ching-Ting Lee

Keyword(s):

Metal Oxide ◽

Surface Treatment ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Gate Layer

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Effect of thermal annealing and oxygen partial pressure on the swelling of HfO2/SiO2/Si metal-oxide-semiconductor structure grown by rf sputtering: A synchrotron x-ray reflectivity study

Applied Physics Letters ◽

10.1063/1.4896157 ◽

2014 ◽

Vol 105 (11) ◽

pp. 113511 ◽

Cited By ~ 8

Author(s):

Debaleen Biswas ◽

Sk Abdul Kader Md Faruque ◽

Anil Kumar Sinha ◽

Anuj Upadhyay ◽

Supratic Chakraborty

Keyword(s):

Metal Oxide ◽

Oxygen Partial Pressure ◽

Partial Pressure ◽

Thermal Annealing ◽

Rf Sputtering ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

X Ray ◽

Metal Oxide Semiconductor Structure

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Influence of rapid thermal annealing on the electrical characteristics of GaAs metal-oxide-semiconductor structures with a double oxide layer

Thin Solid Films ◽

10.1016/0040-6090(94)06377-x ◽

1995 ◽

Vol 257 (1) ◽

pp. 110-115 ◽

Cited By ~ 6

Author(s):

G. Eftekhari

Keyword(s):

Metal Oxide ◽

Oxide Layer ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Double Oxide ◽

Semiconductor Structures

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Rapid thermal annealing and performance of Al2O3/GaN metal-oxide-semiconductor structures

2006 International Conference on Advanced Semiconductor Devices and Microsystems ◽

10.1109/asdam.2006.331188 ◽

2006 ◽

Author(s):

K. Cico ◽

J. Kuzmik ◽

D. Gregusova ◽

T. Lalinsky ◽

A. Georgakilas ◽

...

Keyword(s):

Metal Oxide ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

And Performance

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Thermal annealing of interface traps and trapped charges induced by irradiation in oxides of 3C-SiC metal-oxide-semiconductor structures

Materials Science and Engineering B ◽

10.1016/s0921-5107(97)00034-2 ◽

1997 ◽

Vol 47 (3) ◽

pp. 218-223

Author(s):

M. Yoshikawa ◽

N. Nemoto ◽

H. Itoh ◽

I. Nashiyama ◽

H. Okumura ◽

...

Keyword(s):

Metal Oxide ◽

Thermal Annealing ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

Semiconductor Structures

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Prediction of the thermal annealing of thick oxide metal-oxide-semiconductor dosimeters irradiated in a harsh radiation environment

Applied Physics Letters ◽

10.1063/1.2337084 ◽

2006 ◽

Vol 89 (8) ◽

pp. 083503 ◽

Cited By ~ 4

Author(s):

F. Ravotti ◽

M. Glaser ◽

F. Saigné ◽

L. Dusseau ◽

G. Sarrabayrouse

Keyword(s):

Metal Oxide ◽

Thermal Annealing ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Radiation Environment

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Metal-oxide-semiconductor AlGaN/GaN heterostructure field-effect transistors using TiN/AlO stack gate layer deposited by reactive sputtering

Semiconductor Science and Technology ◽

10.1088/0268-1242/30/1/015019 ◽

2014 ◽

Vol 30 (1) ◽

pp. 015019 ◽

Cited By ~ 2

Author(s):

Liuan Li ◽

Yonggang Xu ◽

Qingpeng Wang ◽

Ryosuke Nakamura ◽

Ying Jiang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Reactive Sputtering ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure ◽

Gate Layer

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Investigation on temperature dependent DC characteristics of gallium oxide metal-oxide-semiconductor field-effect transistors from 25 °C to 300 °C

Applied Physics Express ◽

10.7567/1882-0786/ab0181 ◽

2019 ◽

Vol 12 (4) ◽

pp. 041001 ◽

Cited By ~ 4

Author(s):

Dian Lei ◽

Kaizhen Han ◽

Ying Wu ◽

Zhihong Liu ◽

Xiao Gong

Keyword(s):

Metal Oxide ◽

Gallium Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Temperature Dependent ◽

Dc Characteristics

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Thermal SiO2 gated Ge metal-oxide-semiconductor capacitor on Si substrate formed by thin amorphous Ge oxidation and thermal annealing

Applied Physics Letters ◽

10.1063/1.2976327 ◽

2008 ◽

Vol 93 (8) ◽

pp. 083506 ◽

Cited By ~ 1

Author(s):

Yung-Hsien Wu ◽

Jia-Rong Wu ◽

Yuan-Sheng Lin ◽

Min-Lin Wu

Keyword(s):

Metal Oxide ◽

Thermal Annealing ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Si Substrate ◽

Metal Oxide Semiconductor Capacitor

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