Reliability of partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistor under the ionizing radiation environment
2003 ◽
Vol 20
(5)
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pp. 767-769
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2008 ◽
Vol 47
(11)
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pp. 8297-8304
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2011 ◽
Vol 50
(11R)
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pp. 110210
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2009 ◽
Vol 48
(7)
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pp. 071204
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2010 ◽
Vol 49
(4)
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pp. 044303
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