Molecular modeling of low-k films of carbon-doped silicon oxides for theoretical investigations of the mechanical and dielectric properties

2006 ◽  
Vol 89 (6) ◽  
pp. 061907 ◽  
Author(s):  
N. Tajima ◽  
T. Ohno ◽  
T. Hamada ◽  
K. Yoneda ◽  
N. Kobayashi ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Molecular Modeling ◽  
Silicon Oxides ◽  
Carbon Doped ◽  
Theoretical Investigations ◽  
Doped Silicon ◽  
Low K

Carbon-Doped Silicon Oxide Films with Hydrocarbon Network Bonds for Low-kDielectrics: Theoretical Investigations

2007 ◽  
Vol 46 (9A) ◽  
pp. 5970-5974 ◽  
Author(s):  
Nobuo Tajima ◽  
Takahisa Ohno ◽  
Tomoyuki Hamada ◽  
Katsumi Yoneda ◽  
Seiichi Kondo ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Oxide Films ◽  
Carbon Doped ◽  
Theoretical Investigations ◽  
Doped Silicon

A method to derivatize surface silanol groups to Si-alkyl groups in carbon-doped silicon oxides

RSC Advances ◽  
2016 ◽  
Vol 6 (95) ◽  
pp. 93219-93230 ◽  
Author(s):  
Srikar Rao Darmakkolla ◽  
Hoang Tran ◽  
Atul Gupta ◽  
Shankar B. Rananavare
Keyword(s):  
Dielectric Constant ◽  
Integrated Circuits ◽  
Silicon Oxide ◽  
Copper Interconnects ◽  
Low Dielectric Constant ◽  
Silicon Oxides ◽  
Carbon Doped ◽  
Low Dielectric ◽  
Alkyl Groups ◽  
Doped Silicon

A carbon-doped silicon oxide (CDO) finds use as a material with a low dielectric constant (k) for copper interconnects in multilayered integrated circuits (ICs).

Study of SiH4-based PECVD Low-k Carbon-doped Silicon Oxide

2000 ◽  
Vol 612 ◽  
Author(s):  
Hongning Yang ◽  
Douglas J. Tweet ◽  
Lisa H. Stecker ◽  
Wei Pan ◽  
David R. Evans ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Silicon Oxide ◽  
Additional Cost ◽  
Electrical Performance ◽  
Electrical Characteristics ◽  
Carbon Doped ◽  
Doped Silicon ◽  
Low K

AbstractIn previous studies, low-k carbon-doped silicon oxide (SiOC) films were deposited using organosilicon precursor: (CH3)xSiH4−x. In this paper, we present the properties of PECVD low-k SiOC films produced by using conventional SiH4 based gas precursors. The SiH4 based SiOC films have similar gross physical and electrical characteristics to those of (CH3)xSiH4−x based SiOC. Since the precursors are inexpensive, commercially available and convenient to operate for existing tools, the process should not require additional cost as compared with that of PECVD silicon dioxide. We demonstrate the feasibility of integrating Cu with SiOC on damascene interconnection. The evaluation on electrical performance of the Cu/SiOC based damascene structure will be discussed.

Expanding thermal plasma for low-k dielectrics deposition

2003 ◽  
Vol 766 ◽  
Author(s):  
M. Creatore ◽  
Y. Barrell ◽  
W.M.M. Kessels ◽  
M.C.M. van de Sanden
Keyword(s):  
Mechanical Properties ◽  
Electrical Properties ◽  
Silicon Dioxide ◽  
Thermal Plasma ◽  
Carbon Doped ◽  
Novel Materials ◽  
Subsequent Processing ◽  
Doped Silicon ◽  
Low K ◽  
Processing Steps

AbstractAs the need for low-k dielectrics in the ULSI technology becomes urgent, the research primarily focuses on the deposition of novel materials with appropriate electrical properties and on the challenges concerning their integration with subsequent processing steps. In this framework we introduce the expanding thermal plasma as a novel remote technique for the deposition of low-k carbon-doped silicon dioxide films from argon/hexamethyldisiloxane/oxygen mixtures. We have obtained k values in the range 2.9-3.4 for films characterized by acceptable mechanical properties (hardness of 1 GPa).

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