scholarly journals Thermochemical behavior of hydrogen in hafnium silicate films on Si

2006 ◽  
Vol 89 (5) ◽  
pp. 051921 ◽  
Author(s):  
C. Driemeier ◽  
J. J. Chambers ◽  
L. Colombo ◽  
I. J. R. Baumvol
Keyword(s):  
Hafnium Silicate

Deposition of hafnium silicate films by liquid injection MOCVD using a single source or dual source approach

2004 ◽  
Vol 14 (3) ◽  
pp. 391 ◽  
Author(s):  
John L. Roberts ◽  
Paul A. Marshall ◽  
Anthony C. Jones ◽  
Paul R. Chalker ◽  
Jamie F. Bickley ◽  
...  
Keyword(s):  
Single Source ◽  
Hafnium Silicate ◽  
Liquid Injection ◽  
Dual Source

Hafnium interdiffusion studies from hafnium silicate into silicon

2001 ◽  
Vol 79 (25) ◽  
pp. 4192-4194 ◽  
Author(s):  
M. Quevedo-Lopez ◽  
M. El-Bouanani ◽  
S. Addepalli ◽  
J. L. Duggan ◽  
B. E. Gnade ◽  
...  
Keyword(s):  
Hafnium Silicate

scholarly journals Electrical Characterization of Postmetal Annealed Ultrathin TiN Gate Electrodes in Si MOS Capacitors

2016 ◽  
Vol 2016 ◽  
pp. 1-4 ◽  
Author(s):  
Z. N. Khan ◽  
S. Ahmed ◽  
M. Ali
Keyword(s):  
Electrical Characterization ◽  
Atomic Layer ◽  
Device Fabrication ◽  
Process Window ◽  
Gate Stacks ◽  
Mos Capacitors ◽  
Hafnium Silicate ◽  
Gate Electrodes ◽  
Layer Deposition ◽  
Tin Metal

Focusing on sub-10 nm Silicon CMOS device fabrication technology, we have incorporated ultrathin TiN metal gate electrode in Hafnium Silicate (HfSiO) based metal-oxide capacitors (MOSCAP) with carefully chosen Atomic Layer Deposition (ALD) process parameters. Gate element of the device has undergone a detailed postmetal annealed sequence ranging from 100°C to 1000°C. The applicability of ultrathin TiN on gate electrodes is established through current density versus voltage (J-V), resistance versus temperature (R-T), and permittivity versus temperature analysis. A higher process window starting from 600°C was intentionally chosen to understand the energy efficient behavior expected from ultrathin gate metallization and its unique physical state with shrinking thickness. The device characteristics in form of effective electronic mobility as a function of inverse charge density were also found better than those conventional gate stacks used for EOT scaling.

scholarly journals Spectroscopic and structural investigation of undoped and Er3+ doped hafnium silicate layers

2014 ◽  
Vol 453 ◽  
pp. 100-106 ◽  
Author(s):  
L. Khomenkova ◽  
Y.-T. An ◽  
D. Khomenkov ◽  
X. Portier ◽  
C. Labbé ◽  
...  
Keyword(s):  
Structural Investigation ◽  
Hafnium Silicate ◽  
Silicate Layers

Study of Hafnium Silicate Treated with NO Gas Annealing

2009 ◽  
Vol 54 (2) ◽  
pp. 637-642
Author(s):  
Dong Chan Suh ◽  
Dae-Hong Ko ◽  
Mann-Ho Cho ◽  
Kwun Bum Chung
Keyword(s):  
Hafnium Silicate

Charge Trapping in Hafnium Silicate Films with Modulated Composition and Enhanced Permittivity

2013 ◽  
Vol 854 ◽  
pp. 125-133 ◽  
Author(s):  
Larysa Khomenkova ◽  
Xavier Portier ◽  
Abdelilah Slaoui ◽  
Fabrice Gourbilleau
Keyword(s):  
Dielectric Constant ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Annealing Temperature ◽  
Annealing Treatment ◽  
Charge Trapping ◽  
Dielectric Films ◽  
Radio Frequency Magnetron Sputtering ◽  
Hafnium Silicate ◽  
Evolution Of Microstructure

Hafnium silicate dielectric films were fabricated by radio frequency magnetron sputtering. Their microstructure and electrical properties were studied versus annealing treatment. The evolution of microstructure and the formation of alternated HfO2-rich and SiO2-rich layers were observed and explained by surface directed spinodal decomposition. The stable tetragonal HfO2 phase was formed upon an annealing at 1000-1100°C. The control of annealing temperature allowed the memory window to be achieved and to be tuned as well as the dielectric constant to be enhanced.

scholarly journals Surface-directed spinodal decomposition in hafnium silicate thin films

2009 ◽  
Vol 80 (4) ◽  
Author(s):  
J. Liu ◽  
X. Wu ◽  
W. N. Lennard ◽  
D. Landheer
Keyword(s):  
Thin Films ◽  
Spinodal Decomposition ◽  
Hafnium Silicate

Charge trapping and detrapping characteristics in hafnium silicate gate dielectric using an inversion pulse measurement technique

2005 ◽  
Vol 87 (12) ◽  
pp. 122901 ◽  
Author(s):  
Rino Choi ◽  
S. C. Song ◽  
C. D. Young ◽  
Gennadi Bersuker ◽  
Byoung Hun Lee
Keyword(s):  
Measurement Technique ◽  
Gate Dielectric ◽  
Charge Trapping ◽  
Inversion Pulse ◽  
Hafnium Silicate ◽  
Pulse Measurement

Physical and Electrical Characterization of Hafnium Silicate Thin Films

2002 ◽  
Vol 745 ◽  
Author(s):  
Patrick S. Lysaght ◽  
Brendan Foran ◽  
Gennadi Bersuker ◽  
Larry Larson ◽  
Robert W. Murto ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Semiconductor Industry ◽  
Dielectric Constants ◽  
Gate Insulator ◽  
Electrical Performance ◽  
Organic Chemical ◽  
Hafnium Silicate ◽  
Plan View ◽  
Transmission Electron

ABSTRACTEvaluation of physically thicker gate insulator materials with significantly higher dielectric constants (k = 10 – 25) as potential replacements for silicon dioxide, SiO2 (k = 3.9), and silicon oxynitride continues to be a focus of the semiconductor industry. The challenge is to provide a film with lower leakage current and with capacitance equivalent to < 1.0 nm SiO2 [1–4]. One such candidate material; metal-organic chemical vapor deposited (MOCVD) hafnium silicate, has been physically characterized by high resolution transmission electron microscopy (HRTEM) in plan view, as a blanket, uncapped film and high angle annular dark field scanning transmission electron microscopy (HAADF-STEM) in cross section following integration into capacitors and complementary metal oxide semiconductor (CMOS) transistors. Changes in the material microstructure associated with phase segregation and crystallization as a function of Hf silicate composition and rapid thermal anneal (RTA) temperature have been observed and a discussion of the segregation mechanisms is presented [5–8]. Also, various methods of incorporating nitrogen into bulk hafnium silicate films have been investigated and resultant transistor electrical performance data has been correlated with physical characterization for NH3 post deposition anneal (PDA) treatments at various temperatures.

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