Effects of SiN passivation by catalytic chemical vapor deposition on electrical properties of AlGaN∕GaN heterostructure field-effect transistors

2006 ◽  
Vol 100 (3) ◽  
pp. 033714 ◽  
Author(s):  
Masataka Higashiwaki ◽  
Norio Onojima ◽  
Toshiaki Matsui ◽  
Takashi Mimura
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Catalytic Chemical Vapor Deposition ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

scholarly journals Doping free transfer of graphene using aqueous ammonia flow

RSC Advances ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 1127-1131 ◽  
Author(s):  
Morteza Hassanpour Amiri ◽  
Jonas Heidler ◽  
Ahmar Hasnain ◽  
Saleem Anwar ◽  
Hao Lu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Field Effect ◽  
Dirac Point ◽  
Aqueous Ammonia ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Technical Challenge ◽  
Catalytic Chemical Vapor Deposition ◽  
Graphene Layers

The paper addresses the technical challenge of producing doping-free transferred graphene layers produced by catalytic chemical vapor deposition (CVD), thereby preventing uncontrolled shift of the Dirac point in comprising field-effect transistors.

AlGaN/InGaN Heterostructure Field Effect Transistors Grown on Sapphire by Metal-Organic Chemical Vapor Deposition

2000 ◽  
Vol 639 ◽  
Author(s):  
Chang-Cheng Chuo ◽  
Chia-Min Kan ◽  
Jen-Inn Chyi ◽  
Tzer-En Nee ◽  
Chia-Ming Lee ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Current Density ◽  
Vapor Deposition ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Current Gain ◽  
Saturation Current ◽  
Saturation Current Density ◽  
Heterostructure Field Effect Transistors

ABSTRACTAlGaN/InGaN heterostructure field effect transistors were grown on sapphire by metalorganic chemical vapor deposition. Transmission electron microscopy shows that there are no additional dislocations induced by inserting the InGaN channel while a variation of strain field across the channel is observed. The transistors exhibit good pinch-off characteristics with a threshold voltage of about −2.9 V and a saturation current density of 0.55 A/mm. At room temperature, a peak transconductance of 132 (mS/mm) was obtained for a 1.0 μm-device. Current gain cutoff frequency fT of 9.4 GHz and maximum oscillation frequency fmax of 28.2 GHz were measured for the 1.0 μm-device. As the temperature is increased to 300 °C, the transconductance decreases to 50 mS/mm accompanied by a reduction of saturation current density of 0.24 A/mm due to the enhanced carrier scattering, gate leakage, and drain-source resistance.

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