Air-stable n-type carbon nanotube field-effect transistors with Si3N4 passivation films fabricated by catalytic chemical vapor deposition

2005 ◽  
Vol 86 (11) ◽  
pp. 113115 ◽  
Author(s):  
Daisuke Kaminishi ◽  
Hirokazu Ozaki ◽  
Yasuhide Ohno ◽  
Kenzo Maehashi ◽  
Koichi Inoue ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Nanotube ◽  
Vapor Deposition ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Catalytic Chemical Vapor Deposition

scholarly journals Physical and Electrical Characteristics of Carbon Nanotube Network Field-Effect Transistors Synthesized by Alcohol Catalytic Chemical Vapor Deposition

2011 ◽  
Vol 2011 ◽  
pp. 1-7 ◽  
Author(s):  
Chin-Lung Cheng ◽  
Chien-Wei Liu ◽  
Bau-Tong Dai ◽  
Ming-Yen Lee
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Nanotube ◽  
Vapor Deposition ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Drain Current ◽  
Electrical Characteristics ◽  
Carbon Nanotube Network ◽  
Carbon Nanotube Networks

Carbon nanotubes (CNTs) have been explored in nanoelectronics to realize desirable device performances. Thus, carbon nanotube network field-effect transistors (CNTNFETs) have been developed directly by means of alcohol catalytic chemical vapor deposition (ACCVD) method using Co-Mo catalysts in this work. Various treated temperatures, growth time, and Co/Mo catalysts were employed to explore various surface morphologies of carbon nanotube networks (CNTNs) formed on the SiO2/n-type Si(100) stacked substrate. Experimental results show that most semiconducting single-walled carbon nanotube networks with 5–7 nm in diameter and low disorder-induced mode (D-band) were grown. A bipolar property of CNTNFETs synthesized by ACCVD and using HfO2as top-gate dielectric was demonstrated. Various electrical characteristics, including drain current versus drain voltage(Id-Vd), drain current versus gate voltage(Id-Vg), mobility, subthreshold slope (SS), and transconductance(Gm), were obtained.

scholarly journals Doping free transfer of graphene using aqueous ammonia flow

RSC Advances ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 1127-1131 ◽  
Author(s):  
Morteza Hassanpour Amiri ◽  
Jonas Heidler ◽  
Ahmar Hasnain ◽  
Saleem Anwar ◽  
Hao Lu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Field Effect ◽  
Dirac Point ◽  
Aqueous Ammonia ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Technical Challenge ◽  
Catalytic Chemical Vapor Deposition ◽  
Graphene Layers

The paper addresses the technical challenge of producing doping-free transferred graphene layers produced by catalytic chemical vapor deposition (CVD), thereby preventing uncontrolled shift of the Dirac point in comprising field-effect transistors.

Position-Controlled Carbon Nanotube Field-Effect Transistors Fabricated by Chemical Vapor Deposition Using Patterned Metal Catalyst

2003 ◽  
Vol 42 (Part 1, No. 6B) ◽  
pp. 4116-4119 ◽  
Author(s):  
Yutaka Ohno ◽  
Shinya Iwatsuki ◽  
Tatsuki Hiraoka ◽  
Toshiya Okazaki ◽  
Shigeru Kishimoto ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Nanotube ◽  
Vapor Deposition ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Metal Catalyst

Fabrication of Carbon Nanotube Field Effect Transistors Using Plasma-Enhanced Chemical Vapor Deposition Grown Nanotubes

2006 ◽  
Vol 45 (6B) ◽  
pp. 5485-5489 ◽  
Author(s):  
Hirofumi Ohnaka ◽  
Yoshihiro Kojima ◽  
Shigeru Kishimoto ◽  
Yutaka Ohno ◽  
Takashi Mizutani
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Nanotube ◽  
Vapor Deposition ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Chemical Vapor
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