top gate structure
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2020 ◽  
Vol 41 (1) ◽  
pp. 50-53
Author(s):  
Sungju Choi ◽  
Sung-Jin Choi ◽  
Dae Hwan Kim ◽  
Shinyoung Park ◽  
Jaeyoung Kim ◽  
...  

RSC Advances ◽  
2019 ◽  
Vol 9 (62) ◽  
pp. 36293-36300 ◽  
Author(s):  
Jong Beom Ko ◽  
Seung-Hee Lee ◽  
Kyung Woo Park ◽  
Sang-Hee Ko Park

By supplying optimized oxygen and hydrogen, the highly stable and high mobility oxide TFTs with the top-gate structure were fabricated.


2018 ◽  
Vol 22 (01n03) ◽  
pp. 149-156 ◽  
Author(s):  
Ayşegül Yazıcı ◽  
Ayşe Avcı ◽  
Ahmet Altındal ◽  
Bekir Salih ◽  
Özer Bekaroğlu

New ball-type metallobisphthalocyanines 2 (Co[Formula: see text]Pc[Formula: see text] and 3(Zn[Formula: see text]Pc[Formula: see text] were synthesized from the corresponding 4,4[Formula: see text]-[(5,6-diaminopyrimidine-2,4-diyl)bis(oxy)] diphytalonitril 1, which can be obtained by a nucleophilic displacement reaction of 4-nitrophthalonitrile with 5,6-diaminouracil sulfate. Characterization of novel compounds was performed by UV-vis, FT-IR, [Formula: see text]H-NMR, MALDI-TOF mass spectroscopy and elemental analysis. Organic field effect transistor devices (OFETs) with top gate structure were fabricated using these novel compounds as the active material. The devices were characterized by means of their output and transfer characteristics, and it was found that these OFET devices exhibit [Formula: see text]-type behavior. When compared with the 2-based device, the OFET with 3 showed higher field effect mobility and larger on/of current ratio.


2017 ◽  
Vol 48 (1) ◽  
pp. 1234-1237 ◽  
Author(s):  
Mian Zeng ◽  
Shu-jhih Chen ◽  
Xiao Di Liu ◽  
Li Mei Zeng ◽  
Wen Ying Li ◽  
...  

2016 ◽  
Author(s):  
W. Nomura ◽  
T. Miyakawa ◽  
M. Yamamoto ◽  
T. Uemura

2014 ◽  
Vol 35 (3) ◽  
pp. 357-359 ◽  
Author(s):  
Jun Yong Bak ◽  
Min-Ki Ryu ◽  
Sang Hee Ko Park ◽  
Chi Sun Hwang ◽  
Sung Min Yoon

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