scholarly journals Phonon confinement and self-limiting oxidation effect of silicon nanowires synthesized by laser ablation

2006 ◽  
Vol 100 (2) ◽  
pp. 024311 ◽  
Author(s):  
N. Fukata ◽  
T. Oshima ◽  
N. Okada ◽  
K. Murakami ◽  
T. Kizuka ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Silicon Nanowires ◽  
Phonon Confinement ◽  
Oxidation Effect

Phonon confinement in silicon nanowires synthesized by laser ablation

2006 ◽  
Vol 376-377 ◽  
pp. 864-867 ◽  
Author(s):  
N. Fukata ◽  
T. Oshima ◽  
N. Okada ◽  
T. Kizuka ◽  
T. Tsurui ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Silicon Nanowires ◽  
Phonon Confinement

scholarly journals Phonon confinement effect of silicon nanowires synthesized by laser ablation

2005 ◽  
Vol 86 (21) ◽  
pp. 213112 ◽  
Author(s):  
N. Fukata ◽  
T. Oshima ◽  
K. Murakami ◽  
T. Kizuka ◽  
T. Tsurui ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Silicon Nanowires ◽  
Confinement Effect ◽  
Phonon Confinement ◽  
Phonon Confinement Effect

Phonon Confinement and Impurity Doping in Silicon Nanowires Synthesized by Laser Ablation

2007 ◽  
Vol 131-133 ◽  
pp. 553-558
Author(s):  
Naoki Fukata ◽  
T. Oshima ◽  
N. Okada ◽  
S. Matsushita ◽  
T. Tsurui ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Thermal Oxidation ◽  
Silicon Nanowires ◽  
Optical Phonon ◽  
Surface Oxide Layer ◽  
Phonon Confinement ◽  
Core Diameter ◽  
Phonon Peak ◽  
Impurity Doping ◽  
The Continuum

The effect of phonon confinement and impurity doping in silicon nanowires (SiNWs) synthesized by laser ablation were investigated. The diameter of SiNWs was controlled by the synthesis parameters during laser ablation and the subsequent thermal oxidation. Thermal oxidation increases the thickness of the SiNWs’ surface oxide layer, resulting in a decrease in their crystalline Si core diameter. This effect causes a downshift and asymmetric broadening of the Si optical phonon peak due to phonon confinement. Boron doping was also performed during the growth of SiNWs. Local vibrational modes of boron (B) in silicon nanowires (SiNWs) synthesized by laser ablation were observed at about 618 and 640 cm–1 by Raman scattering measurements. Fano broadening due to coupling between discrete optical phonons and the continuum of interband hole excitations was also observed in the Si optical phonon peak. These results prove that B atoms were doped in the SiNWs.

Size Control and Phonon Confinement of Silicon Nanowires Synthesized by Laser Ablation

2004 ◽  
Vol 832 ◽  
Author(s):  
N. Fukata ◽  
T. Oshima ◽  
T. Tsurui ◽  
S. Ito ◽  
K. Murakami
Keyword(s):  
Laser Ablation ◽  
Silicon Nanowires ◽  
Optical Phonon ◽  
Size Control ◽  
Synthesis Temperature ◽  
Ni Catalyst ◽  
Phonon Confinement ◽  
Phonon Peak ◽  
Lower Temperature ◽  
Phonon Confinement Effect

ABSTRACTSize control of silicon nanowires (SiNWs) synthesized by laser ablation of a Si target with nickel (Ni) as catalysts were investigated. The diameter of SiNWs decreased with decreasing synthesis temperature and content of Ni catalyst. Gradual down shift and asymmetric broadening of Si optical phonon peak depending on the diameter of SiNWs were observed for continuously, thermally oxidized SiNWs and SiNWs with smaller diameters formed at lower temperature. This can be interpreted by the phonon confinement effect. On the other hand, further thermal oxidation produced an upshift of the optical phonon peak. This is considered to be due to compressive stress since this stress was relieved by removing the surface oxide layers formed around the SiNW cores, resulting in a downshift of the optical phonon peak.

scholarly journals Codoping of boron and phosphorus in silicon nanowires synthesized by laser ablation

2008 ◽  
Vol 93 (20) ◽  
pp. 203106 ◽  
Author(s):  
N. Fukata ◽  
M. Mitome ◽  
Y. Bando ◽  
M. Seoka ◽  
S. Matsushita ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Silicon Nanowires ◽  
Phosphorus In Silicon

Hydrogen passivation of P donors and defects in P-doped silicon nanowires synthesized by laser ablation

2007 ◽  
Vol 401-402 ◽  
pp. 523-526 ◽  
Author(s):  
N. Fukata ◽  
S. Matsushita ◽  
T. Tsurui ◽  
J. Chen ◽  
T. Sekiguchi ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Silicon Nanowires ◽  
Hydrogen Passivation ◽  
Doped Silicon
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