scholarly journals Codoping of boron and phosphorus in silicon nanowires synthesized by laser ablation

2008 ◽  
Vol 93 (20) ◽  
pp. 203106 ◽  
Author(s):  
N. Fukata ◽  
M. Mitome ◽  
Y. Bando ◽  
M. Seoka ◽  
S. Matsushita ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Silicon Nanowires ◽  
Phosphorus In Silicon

Hydrogen passivation of P donors and defects in P-doped silicon nanowires synthesized by laser ablation

2007 ◽  
Vol 401-402 ◽  
pp. 523-526 ◽  
Author(s):  
N. Fukata ◽  
S. Matsushita ◽  
T. Tsurui ◽  
J. Chen ◽  
T. Sekiguchi ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Silicon Nanowires ◽  
Hydrogen Passivation ◽  
Doped Silicon

scholarly journals Doping and hydrogen passivation of boron in silicon nanowires synthesized by laser ablation

2006 ◽  
Vol 89 (20) ◽  
pp. 203109 ◽  
Author(s):  
N. Fukata ◽  
J. Chen ◽  
T. Sekiguchi ◽  
N. Okada ◽  
K. Murakami ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Silicon Nanowires ◽  
Hydrogen Passivation

Phonon confinement in silicon nanowires synthesized by laser ablation

2006 ◽  
Vol 376-377 ◽  
pp. 864-867 ◽  
Author(s):  
N. Fukata ◽  
T. Oshima ◽  
N. Okada ◽  
T. Kizuka ◽  
T. Tsurui ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Silicon Nanowires ◽  
Phonon Confinement

Carrier Doping of Silicon Nanowires Synthesized by Laser Ablation

2006 ◽  
Vol 963 ◽  
Author(s):  
Naoki Fukata ◽  
Naoya Okada ◽  
Satoshi Matsushita ◽  
Takao Tsurui ◽  
Shun Ito ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Silicon Nanowires ◽  
Optical Phonon ◽  
Room Temperature ◽  
Vibrational Modes ◽  
Scattering Measurements ◽  
Doped Silicon ◽  
Phonon Peak ◽  
Local Vibrational Modes ◽  
Carrier Doping

ABSTRACTBoron (B) doped silicon nanowires (SiNWs) were synthesized by laser ablation. Local vibrational modes of B in SiNWs were observed by micro-Raman scattering measurements at room temperature. Broadening due to a coupling between the discrete optical phonon and a continuum of interband hole excitations was also observed in the Si optical phonon peak. This is called Fano broadening. These results prove that B atoms were doped in substitutional sites of crystalline Si core of SiNWs during laser ablation.

Catalyst-free growth of amorphous silicon nanowires by laser ablation

2012 ◽  
Vol 112 (1) ◽  
pp. 1-7 ◽  
Author(s):  
F. Kokai ◽  
S. Inoue ◽  
H. Hidaka ◽  
K. Uchiyama ◽  
Y. Takahashi ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Amorphous Silicon ◽  
Silicon Nanowires ◽  
Catalyst Free ◽  
Free Growth

scholarly journals Phonon confinement effect of silicon nanowires synthesized by laser ablation

2005 ◽  
Vol 86 (21) ◽  
pp. 213112 ◽  
Author(s):  
N. Fukata ◽  
T. Oshima ◽  
K. Murakami ◽  
T. Kizuka ◽  
T. Tsurui ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Silicon Nanowires ◽  
Confinement Effect ◽  
Phonon Confinement ◽  
Phonon Confinement Effect

Silicon nanowires prepared by laser ablation at high temperature

1998 ◽  
Vol 72 (15) ◽  
pp. 1835-1837 ◽  
Author(s):  
Y. F. Zhang ◽  
Y. H. Tang ◽  
N. Wang ◽  
D. P. Yu ◽  
C. S. Lee ◽  
...  
Keyword(s):  
High Temperature ◽  
Laser Ablation ◽  
Silicon Nanowires

Laser Ablation Fabricated Nano-Composite of Metal Silicide Crystallines in Silicon Wire

2000 ◽  
Vol 638 ◽  
Author(s):  
Jifa Qi ◽  
Yasuaki Masumoto
Keyword(s):  
Laser Ablation ◽  
Silicon Nanowires ◽  
Growth Process ◽  
Gas Flow ◽  
Metal Silicide ◽  
Si Nanowires ◽  
Nano Composite ◽  
Copper Silicide ◽  
Argon Gas ◽  
Wire Axis

AbstractSilicon nanowires containing a high density of copper atoms were prepared by laser ablation of Si/metal mixture targets at 1200 °C in argon gas flow. Copper atoms can gather in Si nanowires and precipitate into copper silicide nanocrystals distributed alone the wire axis. The diameters of the copper silicide nanocrystals increase with that of the host nanowire. The possible growth process of the composite nanowires was proposed.

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