Hydrogen passivation of P donors and defects in P-doped silicon nanowires synthesized by laser ablation

2007 ◽  
Vol 401-402 ◽  
pp. 523-526 ◽  
Author(s):  
N. Fukata ◽  
S. Matsushita ◽  
T. Tsurui ◽  
J. Chen ◽  
T. Sekiguchi ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Silicon Nanowires ◽  
Hydrogen Passivation ◽  
Doped Silicon

scholarly journals Doping and hydrogen passivation of boron in silicon nanowires synthesized by laser ablation

2006 ◽  
Vol 89 (20) ◽  
pp. 203109 ◽  
Author(s):  
N. Fukata ◽  
J. Chen ◽  
T. Sekiguchi ◽  
N. Okada ◽  
K. Murakami ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Silicon Nanowires ◽  
Hydrogen Passivation

Carrier Doping of Silicon Nanowires Synthesized by Laser Ablation

2006 ◽  
Vol 963 ◽  
Author(s):  
Naoki Fukata ◽  
Naoya Okada ◽  
Satoshi Matsushita ◽  
Takao Tsurui ◽  
Shun Ito ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Silicon Nanowires ◽  
Optical Phonon ◽  
Room Temperature ◽  
Vibrational Modes ◽  
Scattering Measurements ◽  
Doped Silicon ◽  
Phonon Peak ◽  
Local Vibrational Modes ◽  
Carrier Doping

ABSTRACTBoron (B) doped silicon nanowires (SiNWs) were synthesized by laser ablation. Local vibrational modes of B in SiNWs were observed by micro-Raman scattering measurements at room temperature. Broadening due to a coupling between the discrete optical phonon and a continuum of interband hole excitations was also observed in the Si optical phonon peak. This is called Fano broadening. These results prove that B atoms were doped in substitutional sites of crystalline Si core of SiNWs during laser ablation.

scholarly journals Phosphorus doping and hydrogen passivation of donors and defects in silicon nanowires synthesized by laser ablation

2007 ◽  
Vol 90 (15) ◽  
pp. 153117 ◽  
Author(s):  
N. Fukata ◽  
J. Chen ◽  
T. Sekiguchi ◽  
S. Matsushita ◽  
T. Oshima ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Silicon Nanowires ◽  
Hydrogen Passivation ◽  
Phosphorus Doping

Surface Segregation and Backscattering in Doped Silicon Nanowires

2006 ◽  
Vol 96 (16) ◽  
Author(s):  
M. V. Fernández-Serra ◽  
Ch. Adessi ◽  
X. Blase
Keyword(s):  
Silicon Nanowires ◽  
Surface Segregation ◽  
Doped Silicon

scholarly journals Nd-doped silicon nanowires with room temperature ferromagnetism and infrared photoemission

2009 ◽  
Vol 94 (26) ◽  
pp. 263117 ◽  
Author(s):  
Wei-Fan Lee ◽  
Chung-Yang Lee ◽  
Mei-Lin Ho ◽  
Chi-Te Huang ◽  
Chen-Ho Lai ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Doped Silicon

Er3+Photoluminescence from Er-doped Silicon-Rich Silicon Oxide Films Deposited by Laser Ablation of a Si:Er Target in an Oxygen Atmosphere

2004 ◽  
Vol 43 (4A) ◽  
pp. 1541-1544 ◽  
Author(s):  
Jeong Sook Ha ◽  
Young Rae Jang ◽  
Keon Ho Yoo ◽  
Chang Hyun Bae ◽  
Sang Hwan Nam ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Oxygen Atmosphere ◽  
Doped Silicon ◽  
Er Doped

Charge Transport Characteristics in Boron-Doped Silicon Nanowires

2008 ◽  
Vol 55 (11) ◽  
pp. 2931-2938 ◽  
Author(s):  
Sarang Ingole ◽  
Pradeep Manandhar ◽  
Satishkumar B. Chikkannanavar ◽  
Elshan A. Akhadov ◽  
S. Tom Picraux
Keyword(s):  
Charge Transport ◽  
Silicon Nanowires ◽  
Boron Doped ◽  
Doped Silicon

Er-doped silicon nanowires with 1.54μm light-emitting and enhanced electrical and field emission properties

2007 ◽  
Vol 91 (9) ◽  
pp. 093133 ◽  
Author(s):  
C. T. Huang ◽  
C. L. Hsin ◽  
K. W. Huang ◽  
C. Y. Lee ◽  
P. H. Yeh ◽  
...  
Keyword(s):  
Field Emission ◽  
Silicon Nanowires ◽  
Light Emitting ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Doped Silicon ◽  
Er Doped
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