Analytic model for direct tunneling current in polycrystalline silicon-gate metal–oxide–semiconductor devices

Leonard F. Register; Elyse Rosenbaum; Kevin Yang

doi:10.1063/1.123060

Analytic model for direct tunneling current in polycrystalline silicon-gate metal–oxide–semiconductor devices

Applied Physics Letters ◽

10.1063/1.123060 ◽

1999 ◽

Vol 74 (3) ◽

pp. 457-459 ◽

Cited By ~ 183

Author(s):

Leonard F. Register ◽

Elyse Rosenbaum ◽

Kevin Yang

Keyword(s):

Metal Oxide ◽

Polycrystalline Silicon ◽

Semiconductor Devices ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Analytic Model ◽

Direct Tunneling ◽

Direct Tunneling Current

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Fully Quantum-Mechanical Calculation of Hole Direct Tunneling Current in Ultrathin Gate Oxide p-Channel Metal-Oxide-Semiconductor Devices

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.552 ◽

2002 ◽

Vol 41 (Part 1, No. 2A) ◽

pp. 552-556 ◽

Cited By ~ 3

Author(s):

Hideyuki Iwata

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Tunneling Current ◽

Gate Oxide ◽

Quantum Mechanical Calculation ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Mechanical Calculation ◽

Direct Tunneling Current

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Calculation of the direct tunneling current in a metal-oxide-semiconductor structure with one-side open boundary

Journal of Applied Physics ◽

10.1063/1.2202196 ◽

2006 ◽

Vol 99 (10) ◽

pp. 104501 ◽

Cited By ~ 6

Author(s):

E. Nadimi ◽

C. Radehaus ◽

E. P. Nakhmedov ◽

K. Wieczorek

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

Open Boundary ◽

Direct Tunneling ◽

Direct Tunneling Current ◽

Metal Oxide Semiconductor Structure

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An Improved Theory for Direct-Tunneling Current Characterization in a Metal-Oxide-Semiconductor System with Nanometer-Thick Silicon Dioxide Film

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.424 ◽

2000 ◽

Vol 39 (Part 1, No. 2A) ◽

pp. 424-431 ◽

Cited By ~ 1

Author(s):

Hiroshi Nakatsuji ◽

Yasuhisa Omura

Keyword(s):

Metal Oxide ◽

Silicon Dioxide ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Silicon Dioxide Film ◽

Direct Tunneling ◽

Semiconductor System ◽

Direct Tunneling Current ◽

Dioxide Film

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Quantum-mechanical study of the direct tunneling current in metal-oxide-semiconductor structures

Journal of Applied Physics ◽

10.1063/1.1985976 ◽

2005 ◽

Vol 98 (2) ◽

pp. 024506 ◽

Cited By ~ 6

Author(s):

E. P. Nakhmedov ◽

K. Wieczorek ◽

H. Burghardt ◽

C. Radehaus

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Semiconductor Structures ◽

Direct Tunneling ◽

Mechanical Study ◽

Quantum Mechanical Study ◽

Direct Tunneling Current

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Observation of source-to-drain direct tunneling current in 8 nm gate electrically variable shallow junction metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.126789 ◽

2000 ◽

Vol 76 (25) ◽

pp. 3810-3812 ◽

Cited By ~ 62

Author(s):

Hisao Kawaura ◽

Toshitsugu Sakamoto ◽

Toshio Baba

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Shallow Junction ◽

Direct Tunneling ◽

Direct Tunneling Current

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Theory of direct tunneling current in metal–oxide–semiconductor structures

Journal of Applied Physics ◽

10.1063/1.1427398 ◽

2002 ◽

Vol 91 (3) ◽

pp. 1400-1409 ◽

Cited By ~ 49

Author(s):

R. Clerc ◽

A. Spinelli ◽

G. Ghibaudo ◽

G. Pananakakis

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Direct Tunneling ◽

Direct Tunneling Current

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Analytical approach to integrate the different components of direct tunneling current through ultrathin gate oxides in n-channel metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1527710 ◽

2003 ◽

Vol 93 (2) ◽

pp. 1064-1068 ◽

Cited By ~ 13

Author(s):

Kingsuk Maitra ◽

Navakanta Bhat

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Analytical Approach ◽

Field Effect Transistors ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Oxides ◽

Direct Tunneling ◽

Direct Tunneling Current

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Modified Airy function method for modeling of direct tunneling current in metal–oxide–semiconductor structures

Applied Physics Letters ◽

10.1063/1.1403658 ◽

2001 ◽

Vol 79 (12) ◽

pp. 1831-1833 ◽

Cited By ~ 9

Author(s):

Jing Wang ◽

Yutao Ma ◽

Lilin Tian ◽

Zhijian Li

Keyword(s):

Metal Oxide ◽

Function Method ◽

Airy Function ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Direct Tunneling ◽

Direct Tunneling Current

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Two-Dimensional Self-Consistent Calculation of Gate Direct Tunneling Current in Metal–Oxide–Semiconductor Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.3364 ◽

2003 ◽

Vol 42 (Part 1, No. 6A) ◽

pp. 3364-3367 ◽

Cited By ~ 1

Author(s):

Hideyuki Iwata ◽

Toshihiro Matsuda ◽

Takashi Ohzone

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

Consistent Calculation ◽

Direct Tunneling ◽

Self Consistent ◽

Direct Tunneling Current

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Image Force Effect on Tunneling Current for Ultra Thin High-K Dielectric Material Al2O3 Based Metal Oxide Semiconductor Devices

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2015.1812 ◽

2015 ◽

Vol 10 (5) ◽

pp. 645-648 ◽

Cited By ~ 16

Author(s):

N. P. Maity ◽

R. Maity ◽

R. K. Thapa ◽

S. Baishya

Keyword(s):

Metal Oxide ◽

Dielectric Material ◽

Semiconductor Devices ◽

Tunneling Current ◽

Image Force ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Force Effect ◽

High K ◽

High K Dielectric

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