Influence of acoustic phonon confinement on electron mobility in ultrathin silicon on insulator layers

2006 ◽  
Vol 88 (12) ◽  
pp. 122108 ◽  
Author(s):  
L. Donetti ◽  
F. Gámiz ◽  
N. Rodriguez ◽  
F. Jimenez ◽  
C. Sampedro
Keyword(s):  
Electron Mobility ◽  
Acoustic Phonon ◽  
Silicon On Insulator ◽  
Phonon Confinement ◽  
Insulator Layers

Acoustic phonon confinement in silicon nanolayers: Effect on electron mobility

2006 ◽  
Vol 100 (1) ◽  
pp. 013701 ◽  
Author(s):  
L. Donetti ◽  
F. Gámiz ◽  
J. B. Roldán ◽  
A. Godoy
Keyword(s):  
Electron Mobility ◽  
Acoustic Phonon ◽  
Phonon Confinement

Electron mobility in ultrathin silicon-on-insulator layers at 4.2 K

2004 ◽  
Vol 84 (13) ◽  
pp. 2298-2300 ◽  
Author(s):  
M. Prunnila ◽  
J. Ahopelto ◽  
F. Gamiz
Keyword(s):  
Electron Mobility ◽  
Silicon On Insulator ◽  
Insulator Layers

COMPARISON OF LOW FIELD ELECTRON TRANSPORT IN SiC AND GaN STRUCTURES FOR HIGH-POWER AND HIGH-TEMPERATURE DEVICE MODELING

2008 ◽  
Vol 22 (13) ◽  
pp. 1357-1366 ◽  
Author(s):  
M. REZAEE ROKN-ABADI ◽  
H. ARABSHAHI ◽  
M. R. BENAM
Keyword(s):  
Electron Mobility ◽  
Born Approximation ◽  
Acoustic Phonon ◽  
Experimental Methods ◽  
Phase Shift Analysis ◽  
Device Modeling ◽  
Polar Optical Phonon ◽  
Relaxation Time Approximation ◽  
Low Field ◽  
Shift Analysis

Temperature and doping dependencies of electron mobility in SiC and GaN structures have been calculated using an iteravive technique. The following scattering mechanisims, i.e. impurity, polar optical phonon, acoustic phonon, piezoelectric and electron–plasmon are included in the calculation. Ionized imurity scattering has been treated beyond the Born approximation using the phase-shift analysis. It is found that the electron mobility decreases monotonically as the temperature increases from 100 K to 600 K. The low temperature value of electron mobilty increases significantly with increasing doping concentration. The iterative results are in fair agreement with other recent calculations obtained using the relaxation-time approximation and experimental methods.

Formation and nondestructive characterization of ion implanted silicon‐on‐insulator layers

1987 ◽  
Vol 51 (5) ◽  
pp. 343-345 ◽  
Author(s):  
J. Narayan ◽  
S. Y. Kim ◽  
K. Vedam ◽  
R. Manukonda
Keyword(s):  
Silicon On Insulator ◽  
Insulator Layers ◽  
Nondestructive Characterization ◽  
Ion Implanted

Multiscale Modeling of Hot Spots in GaN High Electron Mobility Transistors

2009 ◽  
Author(s):  
Adam Christensen ◽  
Samuel Graham
Keyword(s):  
Multiscale Modeling ◽  
Electron Mobility ◽  
Diffusion Theory ◽  
Hot Spot ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Boltzmann Transport ◽  
Phonon Confinement ◽  
Coupling Region ◽  
High Electron Mobility

A coupled Lattice Boltzmann (LB)-Finite Difference (FD) method is used to solve for the heat transport in a 6 finger GaN high electron mobility transistor. The LB method is used to capture relevant phonon physics near a microscopic heat generation region by solving the Boltzmann Transport Equation, while an FD model is used to capture the thermal transport at the macroscopic level. The coupling region between the LB and FD domains, which enables multiscale modeling, is discussed. The results of the multiscale models were compared to results generated from other numerical methods. An increasing departure from diffusion theory is observed with increasing dissipated power under the gray phonon model. This difference is attributed to a combination of boundary scattering effects as well as phonon confinement within the small dimensions of the hot spot.

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