Electron mobility in ultrathin silicon-on-insulator layers at 4.2 K

M. Prunnila; J. Ahopelto; F. Gamiz

doi:10.1063/1.1687980

Electron mobility in ultrathin silicon-on-insulator layers at 4.2 K

Applied Physics Letters ◽

10.1063/1.1687980 ◽

2004 ◽

Vol 84 (13) ◽

pp. 2298-2300 ◽

Cited By ~ 17

Author(s):

M. Prunnila ◽

J. Ahopelto ◽

F. Gamiz

Keyword(s):

Electron Mobility ◽

Silicon On Insulator ◽

Insulator Layers

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Influence of acoustic phonon confinement on electron mobility in ultrathin silicon on insulator layers

Applied Physics Letters ◽

10.1063/1.2187952 ◽

2006 ◽

Vol 88 (12) ◽

pp. 122108 ◽

Cited By ~ 33

Author(s):

L. Donetti ◽

F. Gámiz ◽

N. Rodriguez ◽

F. Jimenez ◽

C. Sampedro

Keyword(s):

Electron Mobility ◽

Acoustic Phonon ◽

Silicon On Insulator ◽

Phonon Confinement ◽

Insulator Layers

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Influence of Confined Acoustic Phonons on the Electron mobility in Ultrathin Silicon-on-Insulator Layers

ECS Meeting Abstracts ◽

10.1149/ma2005-01/12/532 ◽

2005 ◽

Keyword(s):

Electron Mobility ◽

Silicon On Insulator ◽

Acoustic Phonons ◽

Insulator Layers

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Confined and Guided Vapor–Liquid–Solid Catalytic Growth of Silicon Nanoribbons: From Nanowires to Structured Silicon-on-Insulator Layers

Semiconductor-On-Insulator Materials for Nanoelectronics Applications - Engineering Materials ◽

10.1007/978-3-642-15868-1_4 ◽

2011 ◽

pp. 67-89

Author(s):

A. Lecestre ◽

E. Dubois ◽

A. Villaret ◽

T. Skotnicki ◽

P. Coronel ◽

...

Keyword(s):

Silicon On Insulator ◽

Vapor Liquid Solid ◽

Catalytic Growth ◽

Insulator Layers ◽

Vapor Liquid

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Porous Silicon by Galvanostatic Electrochemical Anodisation of Epitaxial Silicon, Polycrystalline Silicon and Silicon on Insulator Layers

NATO Science for Peace and Security Series B: Physics and Biophysics - Advanced Sensors for Safety and Security ◽

10.1007/978-94-007-7003-4_28 ◽

2013 ◽

pp. 303-320 ◽

Cited By ~ 1

Author(s):

M. Ivanda ◽

M. Balarin ◽

O. Gamulin ◽

V. Đerek ◽

D. Ristić ◽

...

Keyword(s):

Porous Silicon ◽

Polycrystalline Silicon ◽

Silicon On Insulator ◽

Epitaxial Silicon ◽

Insulator Layers

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Formation and nondestructive characterization of ion implanted silicon‐on‐insulator layers

Applied Physics Letters ◽

10.1063/1.98435 ◽

1987 ◽

Vol 51 (5) ◽

pp. 343-345 ◽

Cited By ~ 34

Author(s):

J. Narayan ◽

S. Y. Kim ◽

K. Vedam ◽

R. Manukonda

Keyword(s):

Silicon On Insulator ◽

Insulator Layers ◽

Nondestructive Characterization ◽

Ion Implanted

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Mechanical tensile strain for AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors on a silicon-on-insulator substrate

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2019.153178 ◽

2020 ◽

Vol 820 ◽

pp. 153178 ◽

Cited By ~ 1

Author(s):

Hsuan-Ling Kao ◽

Cheng-Lin Cho ◽

Hsien-Chin Chiu ◽

Hou-Yu Wang ◽

Shuang-Hao Chuang ◽

...

Keyword(s):

Electron Mobility ◽

Tensile Strain ◽

High Electron Mobility Transistors ◽

Silicon On Insulator ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Mechanical Tensile ◽

Insulator Substrate

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Phonon-Limited Electron Mobility Behavior and Inherent Mobility Reduction Mechanism of Ultrathin Silicon-on-Insulator Layer with (111) Surface and Ultrathin Germanium-on-Insulator Layer with (001) Surface

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.7654 ◽

2007 ◽

Vol 46 (12) ◽

pp. 7654-7661 ◽

Cited By ~ 2

Author(s):

Tsuyoshi Yamamura ◽

Shingo Sato ◽

Yasuhisa Omura

Keyword(s):

Electron Mobility ◽

Silicon On Insulator ◽

Reduction Mechanism ◽

Insulator Layer ◽

Mobility Behavior ◽

Mobility Reduction

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Analysis of structural defects in silicon-on-insulator layers with x-ray reflection topography

Journal of Crystal Growth ◽

10.1016/0022-0248(89)90560-5 ◽

1989 ◽

Vol 97 (3-4) ◽

pp. 599-606

Author(s):

M.J.J. Theunissen ◽

A.H. Goemans ◽

A.J.R. De Kock ◽

M.L.J. Geijselaers

Keyword(s):

Silicon On Insulator ◽

Structural Defects ◽

X Ray ◽

Insulator Layers

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In-depth profiling of electron trap states in silicon-on-insulator layers and local mechanical stress near the silicon-on-insulator/buried oxide interface in separation-by-implanted-oxygen wafers

Journal of Applied Physics ◽

10.1063/1.3520660 ◽

2010 ◽

Vol 108 (12) ◽

pp. 124505 ◽

Cited By ~ 3

Author(s):

Yoshikata Nakajima ◽

Takahiro Toda ◽

Tatsuro Hanajiri ◽

Toru Toyabe ◽

Takuo Sugano

Keyword(s):

Mechanical Stress ◽

Depth Profiling ◽

Electron Trap ◽

Silicon On Insulator ◽

Trap States ◽

Oxide Interface ◽

Buried Oxide ◽

Insulator Layers

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An Experimental Study of Properties of Ultrathin Si Layer with Bonded Si/SiO2 Interface

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.854.3 ◽

2013 ◽

Vol 854 ◽

pp. 3-10

Author(s):

O.V. Naumova ◽

B. Fomin ◽

V.P. Popov ◽

Victor Strelchuk ◽

A. Nikolenko ◽

...

Keyword(s):

Experimental Study ◽

Raman Spectroscopy ◽

Structural Properties ◽

Electron Density ◽

Electron Mobility ◽

Structural Modification ◽

Silicon On Insulator ◽

Float Zone ◽

Bonded Interface ◽

Ultrathin Soi

Properties of Si/buried oxide (BOX) systems with bonded interface in silicon-on-insulator (SOI) wafers were studied in this paper. Results show impact of the starting Si material - Czochralski (Cz) or float-zone (Fz) grown silicon on the electron mobility (μe) and BOX charge behavior in ultrathin SOI layers. In particular, there were found: 1) the μe ~ Ne-0.3 dependencies at the electron density Ne in the range of 4х (1011-1012) cm-2 in accumulation Cz-SOI layers with the μe degradation when Si thickness decreases from 20 to 9 nm, and 2) the ~ Ne-0.6 behavior of mobility with no degradation in Fz-SOI layers. Raman spectroscopy shows the structural modification of Cz-SOI layers. An origin of degradation of the electrical and structural properties for ultrathin SOI layer is discussed.

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