Acoustic phonon confinement in silicon nanolayers: Effect on electron mobility

2006 ◽  
Vol 100 (1) ◽  
pp. 013701 ◽  
Author(s):  
L. Donetti ◽  
F. Gámiz ◽  
J. B. Roldán ◽  
A. Godoy
Keyword(s):  
Electron Mobility ◽  
Acoustic Phonon ◽  
Phonon Confinement

Influence of acoustic phonon confinement on electron mobility in ultrathin silicon on insulator layers

2006 ◽  
Vol 88 (12) ◽  
pp. 122108 ◽  
Author(s):  
L. Donetti ◽  
F. Gámiz ◽  
N. Rodriguez ◽  
F. Jimenez ◽  
C. Sampedro
Keyword(s):  
Electron Mobility ◽  
Acoustic Phonon ◽  
Silicon On Insulator ◽  
Phonon Confinement ◽  
Insulator Layers

COMPARISON OF LOW FIELD ELECTRON TRANSPORT IN SiC AND GaN STRUCTURES FOR HIGH-POWER AND HIGH-TEMPERATURE DEVICE MODELING

2008 ◽  
Vol 22 (13) ◽  
pp. 1357-1366 ◽  
Author(s):  
M. REZAEE ROKN-ABADI ◽  
H. ARABSHAHI ◽  
M. R. BENAM
Keyword(s):  
Electron Mobility ◽  
Born Approximation ◽  
Acoustic Phonon ◽  
Experimental Methods ◽  
Phase Shift Analysis ◽  
Device Modeling ◽  
Polar Optical Phonon ◽  
Relaxation Time Approximation ◽  
Low Field ◽  
Shift Analysis

Temperature and doping dependencies of electron mobility in SiC and GaN structures have been calculated using an iteravive technique. The following scattering mechanisims, i.e. impurity, polar optical phonon, acoustic phonon, piezoelectric and electron–plasmon are included in the calculation. Ionized imurity scattering has been treated beyond the Born approximation using the phase-shift analysis. It is found that the electron mobility decreases monotonically as the temperature increases from 100 K to 600 K. The low temperature value of electron mobilty increases significantly with increasing doping concentration. The iterative results are in fair agreement with other recent calculations obtained using the relaxation-time approximation and experimental methods.

Multiscale Modeling of Hot Spots in GaN High Electron Mobility Transistors

2009 ◽  
Author(s):  
Adam Christensen ◽  
Samuel Graham
Keyword(s):  
Multiscale Modeling ◽  
Electron Mobility ◽  
Diffusion Theory ◽  
Hot Spot ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Boltzmann Transport ◽  
Phonon Confinement ◽  
Coupling Region ◽  
High Electron Mobility

A coupled Lattice Boltzmann (LB)-Finite Difference (FD) method is used to solve for the heat transport in a 6 finger GaN high electron mobility transistor. The LB method is used to capture relevant phonon physics near a microscopic heat generation region by solving the Boltzmann Transport Equation, while an FD model is used to capture the thermal transport at the macroscopic level. The coupling region between the LB and FD domains, which enables multiscale modeling, is discussed. The results of the multiscale models were compared to results generated from other numerical methods. An increasing departure from diffusion theory is observed with increasing dissipated power under the gray phonon model. This difference is attributed to a combination of boundary scattering effects as well as phonon confinement within the small dimensions of the hot spot.

Model of Electron Scattering of Strained Si /Si1-xGex (100)

2011 ◽  
Vol 110-116 ◽  
pp. 3338-3342
Author(s):  
Jian Jun Song ◽  
Hua Ying Wu ◽  
He Ming Zhang ◽  
Hui Yong Hu ◽  
Heng Sheng Shan
Keyword(s):  
Electron Scattering ◽  
Electron Mobility ◽  
Acoustic Phonon ◽  
Golden Rule ◽  
Collision Term ◽  
Strained Si ◽  
Total Electron ◽  
Total Scattering ◽  
Scattering Rate ◽  
Term Approximation

Based on Fermi's golden rule and the theory of Boltzmann collision term approximation, taking into account all the scattering mechanisms contributed by ionized impurity, acoustic phonon and intervalley phonon, the model of total scattering rate of strained Si/(100) Si1-xGex is established. Simulating of the scattering models with Matlab software, it was found that the total scattering rate of electron in strained Si/(100) Si1-xGex decreases obviously with the increasing stress when Ge fraction x is less than 0.2 and the values continue to show a constant tendency, and that the total electron scattering rate of strained Si/(100) Si1-xGex decreases about 57% at most comparison with one of unstrained Si. The result can provide valuable references to the research of electron mobility of strained Si materials and the design of NMOS devices.

Brillouin study of acoustic phonon confinement in GeO2 nanocubes

2007 ◽  
Vol 91 (9) ◽  
pp. 093116 ◽  
Author(s):  
Y. Li ◽  
H. S. Lim ◽  
S. C. Ng ◽  
M. H. Kuok ◽  
M. Y. Ge ◽  
...  
Keyword(s):  
Acoustic Phonon ◽  
Phonon Confinement
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