2007 65th Annual Device Research Conference
Latest Publications

TOTAL DOCUMENTS

135

(FIVE YEARS 0)

H-INDEX

6

(FIVE YEARS 0)

Published By IEEE

9781424411016, 9781424411023

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Analytical Modeling of the Suspended-Gate FET and Design Insights for Digital Logic

2007 65th Annual Device Research Conference ◽

10.1109/drc.2007.4373670 ◽

2007 ◽

Cited By ~ 1

Author(s):

K. Akarvardar ◽

C. Eggimann ◽

D. Tsamados ◽

Y. Chauhan ◽

G. C. Wan ◽

...

Keyword(s):

Analytical Modeling ◽

Digital Logic

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[PDF Not Yet Available In IEEE Xplore]

2007 65th Annual Device Research Conference ◽

10.1109/drc.2007.4373731 ◽

2007 ◽

Cited By ~ 1

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[PDF Not Yet Available In IEEE Xplore]

2007 65th Annual Device Research Conference ◽

10.1109/drc.2007.4373736 ◽

2007 ◽

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Electric-Field Dependence of Junction Temperature in GaN HEMTs

2007 65th Annual Device Research Conference ◽

10.1109/drc.2007.4373689 ◽

2007 ◽

Cited By ~ 1

Author(s):

Vivek Mehrotra ◽

Karim Boutros ◽

Berinder Brar

Keyword(s):

Electric Field ◽

Field Dependence ◽

Junction Temperature ◽

Electric Field Dependence ◽

Gan Hemts

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Gallium Nitride Nanowire Devices - Fabrication, Characterization, and Simulation

2007 65th Annual Device Research Conference ◽

10.1109/drc.2007.4373701 ◽

2007 ◽

Author(s):

Abhishek Motayed ◽

Albert V. Davydov ◽

Maoqi He ◽

S. N. Mohammad

Keyword(s):

Gallium Nitride

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Novel 1 kv, normally-off, vertically integrated, dual-gate VJFET power switch with a low 4.6 mωcm2 on-state resistance

2007 65th Annual Device Research Conference ◽

10.1109/drc.2007.4373636 ◽

2007 ◽

Cited By ~ 1

Author(s):

B. Nechay ◽

E. Stewart ◽

V. Veliadis ◽

T. McNutt ◽

H. Hearne ◽

...

Keyword(s):

Power Switch ◽

Dual Gate ◽

State Resistance

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Dynamic Two-Port Parameters of Ballistic Carbon Nanotube FETs: A Quantum Simulation Study

2007 65th Annual Device Research Conference ◽

10.1109/drc.2007.4373671 ◽

2007 ◽

Author(s):

Yijian Ouyang ◽

Jing Guo

Keyword(s):

Carbon Nanotube ◽

Simulation Study ◽

Quantum Simulation ◽

Carbon Nanotube Fets

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Barrier Lowering and Widening of Schottky Barrier MOSFETs by Self-Aligned Multiple Workfunction Gate

2007 65th Annual Device Research Conference ◽

10.1109/drc.2007.4373678 ◽

2007 ◽

Author(s):

Sheng-Pin Yeh ◽

Chun-Hsing Shih

Keyword(s):

Schottky Barrier

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Analytical Model of Apparent Threshold Voltage Lowering Induced by Contact Resistance in Amorphous Silicon Thin Film Transistors

2007 65th Annual Device Research Conference ◽

10.1109/drc.2007.4373684 ◽

2007 ◽

Cited By ~ 1

Author(s):

Bahman Hekmatshoar ◽

Ke Long ◽

Sigurd Wagner ◽

James C. Sturm

Keyword(s):

Thin Film ◽

Contact Resistance ◽

Amorphous Silicon ◽

Analytical Model ◽

Threshold Voltage ◽

Thin Film Transistors ◽

Silicon Thin Film

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[PDF Not Yet Available In IEEE Xplore]

2007 65th Annual Device Research Conference ◽

10.1109/drc.2007.4373732 ◽

2007 ◽

Cited By ~ 1

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