Effect of nitrogen ion bombardment on defect formation and luminescence efficiency of GaNP epilayers grown by molecular-beam epitaxy

2006 ◽  
Vol 88 (10) ◽  
pp. 101904 ◽  
Author(s):  
D. Dagnelund ◽  
I. A. Buyanova ◽  
T. Mchedlidze ◽  
W. M. Chen ◽  
A. Utsumi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Formation ◽  
Ion Bombardment ◽  
Luminescence Efficiency ◽  
Nitrogen Ion

GaNxAs1-x Growth by Molecular Beam Epitaxy with Dispersive Nitrogen

2001 ◽  
Vol 693 ◽  
Author(s):  
S.Z. Wang ◽  
S.F. Yoon ◽  
T.K. Ng ◽  
W.K. Loke ◽  
W.J. Fan
Keyword(s):  
Optical Property ◽  
Molecular Beam Epitaxy ◽  
Deleterious Effect ◽  
Molecular Beam ◽  
Ion Bombardment ◽  
High Quality ◽  
Growth Technique ◽  
Material Quality ◽  
Nitrogen Ions ◽  
Nitrogen Ion

AbstractThe effect of energetic nitrogen ion bombardment during growth may have a deleterious effect on the material quality. To avoid the bombardment effect of energetic nitrogen ions, a modified mode for GaAsN growth using dispersive nitrogen is reported. High quality GaAsN epilayers and good GaAsN/GaAs interface were achieved using this growth mode. The results suggest that the surface of samples grown using dispersive nitrogen has fewer defects than those grown using direct nitrogen beam. The optical property of GaAsN samples grown using the dispersive nitrogen technique was found to improve, due to the lower ion bombardment effect. This growth technique is expected to be advantageous for growing high quality GaAsN materials for optoelectronic applications.

Effect of growth conditions on grown-in defect formation and luminescence efficiency in Ga(In)NP epilayers grown by molecular-beam epitaxy

2008 ◽  
Vol 5 (2) ◽  
pp. 460-463
Author(s):  
D. Dagnelund ◽  
I. A. Buyanova ◽  
W. M. Chen ◽  
A. Utsumi ◽  
Y. Furukawa ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Formation ◽  
Growth Conditions ◽  
Luminescence Efficiency

The influence of nitrogen ion energy on the quality of GaN films grown with molecular beam epitaxy

1995 ◽  
Vol 24 (4) ◽  
pp. 249-255 ◽  
Author(s):  
T. C. Fu ◽  
N. Newman ◽  
E. Jones ◽  
J. S. Chan ◽  
X. Liu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Energy ◽  
Nitrogen Ion

Effect of alloy composition on defect formation in GexSi1−x/Si heterostructures obtained by molecular beam epitaxy

1994 ◽  
Vol 141 (1-2) ◽  
pp. 109-118 ◽  
Author(s):  
V.I. Vdovin ◽  
M.G. Mil'vidskii ◽  
T.G. Yugova ◽  
K.L. Lyutovich ◽  
S.M. Saidov
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Formation ◽  
Alloy Composition
Sign in / Sign up

Export Citation Format

Share Document