Effects of stoichiometry on defect formation in ZnO epilayers grown by molecular-beam epitaxy: An optically detected magnetic resonance study

2008 ◽  
Vol 103 (2) ◽  
pp. 023712 ◽  
Author(s):  
X. J. Wang ◽  
I. A. Buyanova ◽  
W. M. Chen ◽  
C. J. Pan ◽  
C. W. Tu
Keyword(s):  
Magnetic Resonance ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Formation ◽  
Magnetic Resonance Study ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected

Photoluminescence and optically detected magnetic resonance of Si/Si1−xGexstrained-layer superlattices grown by molecular-beam epitaxy

1993 ◽  
Vol 47 (3) ◽  
pp. 1305-1315 ◽  
Author(s):  
E. R. Glaser ◽  
T. A. Kennedy ◽  
D. J. Godbey ◽  
P. E. Thompson ◽  
K. L. Wang ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected

Optically detected magnetic resonance of deep centers in molecular beam epitaxy ZnSe:N

1993 ◽  
Vol 63 (17) ◽  
pp. 2411-2413 ◽  
Author(s):  
B. N. Murdin ◽  
B. C. Cavenett ◽  
C. R. Pidgeon ◽  
J. Simpson ◽  
I. Hauksson ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Deep Centers ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected

Optically detected magnetic resonance study of SiC:Ti

1985 ◽  
Vol 32 (4) ◽  
pp. 2273-2284 ◽  
Author(s):  
K. M. Lee ◽  
Le Si Dang ◽  
G. D. Watkins ◽  
W. J. Choyke
Keyword(s):  
Magnetic Resonance ◽  
Magnetic Resonance Study ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected

Optically Detected Magnetic Resonance Study of 3D Arrayed Silicon Vacancies in SiC pn Diodes

2020 ◽  
Vol 1004 ◽  
pp. 343-348
Author(s):  
Yuichi Yamazaki ◽  
Yoji Chiba ◽  
Shin Ichiro Sato ◽  
Takahiro Makino ◽  
Naoto Yamada ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Magnetic Resonance ◽  
Three Dimensional ◽  
Magnetic Resonance Study ◽  
Mapping Analysis ◽  
Optically Detected Magnetic Resonance ◽  
Ion Proton ◽  
Pl Mapping ◽  
Optically Detected

We demonstrated optically detected magnetic resonance (ODMR) measurements using three-dimensional (3D) arrayed silicon vacancies (VSis) in in-plane SiC pn diodes. Proton beam writing successfully created 3D arrayed VSis using different ion (proton) energies. The results of PL mapping analysis indicate that the features of luminescent spot such as size and depth can be estimated by a Monte Carlo simulation (SRIM). This suggests that diagnosis at any locations in SiC devices can be realized using VSi quantum sensors. Luminescent spots with different depth ranging 4-60 μm showed similar ODMR spectra including its contrast, which means that a similar sensor sensitivity is expected. The results suggest that 3D arrayed VSi can act as quantum sensor elements with uniform sensitivity in SiC devices.

Sign in / Sign up

Export Citation Format

Share Document