The influence of nitrogen ion energy on the quality of GaN films grown with molecular beam epitaxy

1995 ◽  
Vol 24 (4) ◽  
pp. 249-255 ◽  
Author(s):  
T. C. Fu ◽  
N. Newman ◽  
E. Jones ◽  
J. S. Chan ◽  
X. Liu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Energy ◽  
Nitrogen Ion

Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 215
Author(s):  
Rajeev R. Kosireddy ◽  
Stephen T. Schaefer ◽  
Marko S. Milosavljevic ◽  
Shane R. Johnson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Interface Quality ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Lateral Variations

Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray diffraction, Nomarski optical microscopy, atomic force microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The InAsSbBi layers are 210 nm thick, coherently strained, and show no observable defects. The substrate offcut is not observed to influence the structural and interface quality of the samples. Each sample exhibits small lateral variations in the Bi mole fraction, with the largest variation observed in the on-axis growth. Bismuth rich surface droplet features are observed on all samples. The surface droplets are isotropic on the on-axis sample and elongated along the [011¯] step edges on the 1° and 4° offcut samples. No significant change in optical quality with offcut angle is observed.

Improving the Quality of a Heteroepitaxial CaF2 Overlayer by Rapid Post Annealing

1984 ◽  
Vol 35 ◽  
Author(s):  
Loren Pfeiffer ◽  
Julia M. Phillips ◽  
T.P. Smith ◽  
W. M. Augustyniak ◽  
K. W. West
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Mechanical Stress ◽  
Short Duration ◽  
Chemical Etching ◽  
Molecular Beam ◽  
Dielectric Breakdown ◽  
Post Annealing ◽  
Random Direction

ABSTRACTWe show that post anneals of short duration at high temperature can markedly improve the quality of CaF2 films grown by molecular beam epitaxy (MBE) on Si (100). Anneals at 1100°C for 20 sec in an Ar ambient improved χmin, the ratio of backscattered 1.8 MeV He4 ions in the aligned to random direction, from as-grown values of .07 to .26, to post post-anneal values of .03 to .045. This is the best χmin yet reported for the CaF2:Si system. The post-annealed films also show improved resistance to chemical etching and mechanical stress, and increased dielectric breakdown voltages.

Effect of ion energy on Sn donor activation and defect production in molecular beam epitaxy GaAs doped with Sn ions during growth

1993 ◽  
Vol 74 (7) ◽  
pp. 4375-4381 ◽  
Author(s):  
J. H. Thompson ◽  
G. A. C. Jones ◽  
D. A. Ritchie ◽  
E. H. Linfield ◽  
A. C. Churchill ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Production ◽  
Ion Energy
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