Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular beam epitaxy

2002 ◽  
Author(s):  
Wei Li ◽  
Markus Pessa ◽  
Tommy Ahlgren ◽  
James Dekker
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Luminescence Efficiency

Effect of nitrogen ion bombardment on defect formation and luminescence efficiency of GaNP epilayers grown by molecular-beam epitaxy

2006 ◽  
Vol 88 (10) ◽  
pp. 101904 ◽  
Author(s):  
D. Dagnelund ◽  
I. A. Buyanova ◽  
T. Mchedlidze ◽  
W. M. Chen ◽  
A. Utsumi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Formation ◽  
Ion Bombardment ◽  
Luminescence Efficiency ◽  
Nitrogen Ion

Structural and Optical Properties of the Multilayer Structures Formed by Ge Sub-Critical Insertions in a Si Matrix

2002 ◽  
Vol 717 ◽  
Author(s):  
George E. Cirlin ◽  
Nikolai D. Zakharov ◽  
Peter Werner ◽  
Alexander G. Makarov ◽  
Andrei F. Tsatsul'nikov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Critical Thickness ◽  
Growth Parameter ◽  
Multilayer Structures ◽  
Structural And Optical Properties ◽  
Luminescence Efficiency

AbstractSi/Ge multilayer structures formed by the deposition of relatively small amounts of Ge layers (less then the critical thickness for 3D islands formation) are obtained by molecular beam epitaxy. Their structural and optical properties are investigated in detail. Appropriate growth parameter of the stacked island structures lead to significant increasing of the luminescence efficiency even at room temperature.

Effect of growth conditions on grown-in defect formation and luminescence efficiency in Ga(In)NP epilayers grown by molecular-beam epitaxy

2008 ◽  
Vol 5 (2) ◽  
pp. 460-463
Author(s):  
D. Dagnelund ◽  
I. A. Buyanova ◽  
W. M. Chen ◽  
A. Utsumi ◽  
Y. Furukawa ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Formation ◽  
Growth Conditions ◽  
Luminescence Efficiency

scholarly journals A Study of the Effect of V/III Flux Ratio and Substrate Temperature on the in Incorporation Efficiency in InxGa1−x/GaN Heterostructures Grown by RF Plasma-Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 5 (S1) ◽  
pp. 167-173
Author(s):  
M. L. O’Steen ◽  
F. Fedler ◽  
R. J. Hauenstein
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Alloy Composition ◽  
Flux Ratio ◽  
Rf Plasma ◽  
Thermally Activated ◽  
Luminescence Efficiency ◽  
Order Of Magnitude ◽  
Incorporation Efficiency

Laterally resolved high resolution X-ray diffraction (HRXRD) and photoluminescence spectroscopy (PL) have been used to assess In incorporation efficiency in InxGa1−xN/GaN heterostructures grown through rf-plasma-assisted molecular beam epitaxy. Average alloy composition over a set of InxGa1−xN/GaN superlattices has been found to depend systematically upon both substrate temperature (Tsub) and V/III flux ratio during growth. A pronounced thermally activated In loss (with more than an order-of-magnitude decrease in average alloy composition) is observed over a narrow temperature range (590–670°C), with V/III flux ratio fixed. Additionally, the V/III flux ratio is observed to further strongly affect In incorporation efficiency for samples grown at high Tsub, with up to an order-of-magnitude enhancement in In content despite only a minor increase in V/III flux ratio. PL spectra reveal redshifts as In content is increased and luminescence efficiency which degrades rapidly with decreasing Tsub. Results are consistent with In loss arising from thermally activated surface segregation + surface desorption processes during growth.

Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular-beam epitaxy

2001 ◽  
Vol 79 (8) ◽  
pp. 1094-1096 ◽  
Author(s):  
Wei Li ◽  
Markus Pessa ◽  
Tommy Ahlgren ◽  
James Decker
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Luminescence Efficiency

A Study of the Effect of V/III Flux Ratio and Substrate Temperature on the in Incorporation Efficiency in inxGa1−x/GaN Heterostructures Grown by Rf Plasma-Assisted Molecular Beam Epitaxy

1999 ◽  
Vol 595 ◽  
Author(s):  
M. L. O'Steen ◽  
F. Fedler ◽  
R. J. Hauenstein
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Alloy Composition ◽  
Flux Ratio ◽  
Rf Plasma ◽  
Thermally Activated ◽  
Luminescence Efficiency ◽  
Order Of Magnitude ◽  
Incorporation Efficiency

AbstractLaterally resolved high resolution X-ray diffraction (HRXRD) and photoluminescence spectroscopy (PL) have been used to assess In incorporation efficiency in InxGa1−xN/GaN heterostructures grown through rf-plasma-assisted molecular beam epitaxy. Average alloy composition over a set of InxGa1−xN/GaN superlattices has been found to depend systematically upon both substrate temperature (Tsub) and V/III flux ratio during growth. A pronounced thermally activated In loss (with more than an order-of-magnitude decrease in average alloy composition) is observed over a narrow temperature range (590–670oC), with V/III flux ratio fixed. Additionally, the V/III flux ratio is observed to further strongly affect In incorporation efficiency for samples grown at high Tsub, with up to an order-of-magnitude enhancement in In content despite only a minor increase in V/III flux ratio. PL spectra reveal redshifts as In content is increased and luminescence efficiency which degrades rapidly with decreasing Tsub. Results are consistent with In loss arising from thermally activated surface segregation + surface desorption processes during growth.

Defects in Heavily-Doped MBE GaAs

1982 ◽  
Vol 40 ◽  
pp. 442-445
Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

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