Characterization of field-effect transistors with La2Hf2O7 and HfO2 gate dielectric layers deposited by molecular-beam epitaxy

Z. M. Rittersma; J. C. Hooker; G. Vellianitis; J.-P. Locquet; C. Marchiori; M. Sousa; J. Fompeyrine; L. Pantisano; W. Deweerd; T. Schram; M. Rosmeulen; S. De Gendt; A. Dimoulas

doi:10.1063/1.2163985

Characterization of field-effect transistors with La2Hf2O7 and HfO2 gate dielectric layers deposited by molecular-beam epitaxy

Journal of Applied Physics ◽

10.1063/1.2163985 ◽

2006 ◽

Vol 99 (2) ◽

pp. 024508 ◽

Cited By ~ 34

Author(s):

Z. M. Rittersma ◽

J. C. Hooker ◽

G. Vellianitis ◽

J.-P. Locquet ◽

C. Marchiori ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Dielectric Layers

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Low frequency and microwave characterization of submicron‐gate In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterojunction metal‐semiconductor field‐effect transistors grown by molecular‐beam epitaxy

Journal of Applied Physics ◽

10.1063/1.343600 ◽

1989 ◽

Vol 66 (12) ◽

pp. 6168-6174 ◽

Cited By ~ 7

Author(s):

J. B. Kuang ◽

P. J. Tasker ◽

S. Ratanaphanyarat ◽

W. J. Schaff ◽

L. F. Eastman ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Low Frequency ◽

Microwave Characterization

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Experimental and theoretical characterization of delta-doped quantum well field-effect transistors grown by gas-source molecular-beam epitaxy

IEEE Transactions on Electron Devices ◽

10.1109/16.8879 ◽

1988 ◽

Vol 35 (12) ◽

pp. 2449-2450 ◽

Cited By ~ 1

Author(s):

T.Y. Kuo ◽

J.E. Cunningham ◽

E.F. Schubert ◽

W.T. Tsang ◽

T.H. Chiu ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Gas Source ◽

Well Field ◽

Theoretical Characterization

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Effects of polar functional groups and roughness topography of polymer gate dielectric layers on pentacene field-effect transistors

Organic Electronics ◽

10.1016/j.orgel.2006.12.007 ◽

2007 ◽

Vol 8 (4) ◽

pp. 336-342 ◽

Cited By ~ 50

Author(s):

Kwonwoo Shin ◽

Sang Yoon Yang ◽

Chanwoo Yang ◽

Hayoung Jeon ◽

Chan Eon Park

Keyword(s):

Functional Groups ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Dielectric Layers ◽

Polar Functional Groups

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Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition

Applied Surface Science ◽

10.1016/j.apsusc.2018.05.191 ◽

2018 ◽

Vol 461 ◽

pp. 255-259 ◽

Cited By ~ 3

Author(s):

R. Stoklas ◽

D. Gregušová ◽

S. Hasenöhrl ◽

E. Brytavskyi ◽

M. Ťapajna ◽

...

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Layer Deposition ◽

Heterostructure Field Effect Transistors

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Submicron‐gate In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterojunction metal‐semiconductor field‐effect transistors grown by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.100740 ◽

1989 ◽

Vol 54 (12) ◽

pp. 1136-1138 ◽

Cited By ~ 5

Author(s):

J. B. Kuang ◽

P. J. Tasker ◽

Y. K. Chen ◽

G. W. Wang ◽

L. F. Eastman ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors

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Molecular beam epitaxial growth and characterization of pseudomorphic modulation-doped field effect transistors

Thin Solid Films ◽

10.1016/0040-6090(91)90373-6 ◽

1991 ◽

Vol 196 (2) ◽

pp. 295-303 ◽

Cited By ~ 1

Author(s):

J. Zhang ◽

N.C. Tien ◽

E.W. Lin ◽

H.H. Wieder ◽

W.H. Ku ◽

...

Keyword(s):

Epitaxial Growth ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Fabrication and electrical characterization of ultra thin epitaxial γ-Al/sub 2/O/sub 3/ gate dielectric films on Si[100] by molecular beam epitaxy (MBE)

Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537) ◽

10.1109/iwgi.2001.967572 ◽

2002 ◽

Author(s):

M. Shahjahan ◽

N. Takahashi ◽

K. Sawada ◽

M. Ishida

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Gate Dielectric ◽

Electrical Characterization ◽

Dielectric Films

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Monolithic integration of an AlGaAs/GaAs multiquantum well laser and GaAs metal‐semiconductor field‐effect transistors on a semi‐insulating GaAs substrate by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.94741 ◽

1984 ◽

Vol 44 (3) ◽

pp. 325-327 ◽

Cited By ~ 14

Author(s):

T. Sanada ◽

S. Yamakoshi ◽

O. Wada ◽

T. Fujii ◽

T. Sakurai ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Gaas Substrate ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Monolithic Integration ◽

Multiquantum Well

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Fabrication and characterization of BN/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors with sputtering-deposited BN gate dielectric

physica status solidi (c) ◽

10.1002/pssc.201300290 ◽

2013 ◽

Vol 10 (11) ◽

pp. 1401-1404 ◽

Cited By ~ 7

Author(s):

Tuan Quy Nguyen ◽

Hong-An Shih ◽

Masahiro Kudo ◽

Toshi-kazu Suzuki

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Fabrication And Characterization ◽

Heterojunction Field Effect Transistors

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Demonstration of β-(AlxGa1−x)2O3/β-Ga2O3modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy

Applied Physics Express ◽

10.7567/apex.10.071101 ◽

2017 ◽

Vol 10 (7) ◽

pp. 071101 ◽

Cited By ~ 77

Author(s):

Elaheh Ahmadi ◽

Onur S. Koksaldi ◽

Xun Zheng ◽

Tom Mates ◽

Yuichi Oshima ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors

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