Low frequency and microwave characterization of submicron‐gate In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterojunction metal‐semiconductor field‐effect transistors grown by molecular‐beam epitaxy

1989 ◽  
Vol 66 (12) ◽  
pp. 6168-6174 ◽  
Author(s):  
J. B. Kuang ◽  
P. J. Tasker ◽  
S. Ratanaphanyarat ◽  
W. J. Schaff ◽  
L. F. Eastman ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Microwave Characterization

Characterization of field-effect transistors with La2Hf2O7 and HfO2 gate dielectric layers deposited by molecular-beam epitaxy

2006 ◽  
Vol 99 (2) ◽  
pp. 024508 ◽  
Author(s):  
Z. M. Rittersma ◽  
J. C. Hooker ◽  
G. Vellianitis ◽  
J.-P. Locquet ◽  
C. Marchiori ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Field Effect ◽  
Molecular Beam ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Dielectric Layers

Characterization of Low-Frequency Noise in Etched GaAs Nanowire Field-Effect Transistors Having SiNxGate Insulator

2012 ◽  
Vol 51 (6S) ◽  
pp. 06FE18 ◽  
Author(s):  
Toru Muramatsu ◽  
Kensuke Miura ◽  
Yuta Shiratori ◽  
Zenji Yatabe ◽  
Seiya Kasai
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Gaas Nanowire

Submicron‐gate In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterojunction metal‐semiconductor field‐effect transistors grown by molecular beam epitaxy

1989 ◽  
Vol 54 (12) ◽  
pp. 1136-1138 ◽  
Author(s):  
J. B. Kuang ◽  
P. J. Tasker ◽  
Y. K. Chen ◽  
G. W. Wang ◽  
L. F. Eastman ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistors

Demonstration of β-(AlxGa1−x)2O3/β-Ga2O3modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy

2017 ◽  
Vol 10 (7) ◽  
pp. 071101 ◽  
Author(s):  
Elaheh Ahmadi ◽  
Onur S. Koksaldi ◽  
Xun Zheng ◽  
Tom Mates ◽  
Yuichi Oshima ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistors

Fabrication of metal‐epitaxial insulator‐semiconductor field‐effect transistors using molecular beam epitaxy of CaF2on Si

1984 ◽  
Vol 45 (8) ◽  
pp. 907-909 ◽  
Author(s):  
T. P. Smith ◽  
Julia M. Phillips ◽  
W. M. Augustyniak ◽  
P. J. Stiles
Keyword(s):  
Molecular Beam Epitaxy ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistors
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