Experimental and theoretical characterization of delta-doped quantum well field-effect transistors grown by gas-source molecular-beam epitaxy

1988 ◽  
Vol 35 (12) ◽  
pp. 2449-2450 ◽  
Author(s):  
T.Y. Kuo ◽  
J.E. Cunningham ◽  
E.F. Schubert ◽  
W.T. Tsang ◽  
T.H. Chiu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistors ◽  
Gas Source ◽  
Well Field ◽  
Theoretical Characterization

Characterization of field-effect transistors with La2Hf2O7 and HfO2 gate dielectric layers deposited by molecular-beam epitaxy

2006 ◽  
Vol 99 (2) ◽  
pp. 024508 ◽  
Author(s):  
Z. M. Rittersma ◽  
J. C. Hooker ◽  
G. Vellianitis ◽  
J.-P. Locquet ◽  
C. Marchiori ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Field Effect ◽  
Molecular Beam ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Dielectric Layers

Structural characterization of GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy

1986 ◽  
Vol 48 (17) ◽  
pp. 1153-1155 ◽  
Author(s):  
J. M. Vandenberg ◽  
R. A. Hamm ◽  
A. T. Macrander ◽  
M. B. Panish ◽  
H. Temkin
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Structural Characterization ◽  
Molecular Beam ◽  
Quantum Well Structures ◽  
Gas Source

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well

GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy

1985 ◽  
Vol 47 (4) ◽  
pp. 394-396 ◽  
Author(s):  
H. Temkin ◽  
M. B. Panish ◽  
P. M. Petroff ◽  
R. A. Hamm ◽  
J. M. Vandenberg ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Structures ◽  
Gas Source
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