A model of capacitance characteristic for uniaxially strained Si N-metal-oxide-semiconductor field-effect transistor

L Yi;  Zhang He-Ming;  Hu Hui-Yong;  Yang Jin-Yong;  Yin Shu-Juan;  Zhou Chun-Yu

doi:10.7498/aps.64.067305

A model of capacitance characteristic for uniaxially strained Si N-metal-oxide-semiconductor field-effect transistor

Acta Physica Sinica ◽

10.7498/aps.64.067305 ◽

2015 ◽

Vol 64 (6) ◽

pp. 067305

Author(s):

L Yi ◽

Zhang He-Ming ◽

Hu Hui-Yong ◽

Yang Jin-Yong ◽

Yin Shu-Juan ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Effect Transistor

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Gate tunneling current predicting model of strained Si for scaled metal-oxide semiconductor field effect transistor

Acta Physica Sinica ◽

10.7498/aps.60.027305 ◽

2011 ◽

Vol 60 (2) ◽

pp. 027305

Author(s):

Wu Tie-Feng ◽

Zhang He-Ming ◽

Wang Guan-Yu ◽

Hu Hui-Yong

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Predicting Model ◽

Effect Transistor ◽

Gate Tunneling

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Influence of -ray total dose radiation effect on the tunneling gate current of the uniaxial strained Si nanometer n-channel metal-oxide-semiconductor field-effect transistor

Acta Physica Sinica ◽

10.7498/aps.66.076101 ◽

2017 ◽

Vol 66 (7) ◽

pp. 076101

Author(s):

Hao Min-Ru ◽

Hu Hui-Yong ◽

Liao Chen-Guang ◽

Wang Bin ◽

Zhao Xiao-Hong ◽

...

Keyword(s):

Metal Oxide ◽

Total Dose ◽

Field Effect ◽

Field Effect Transistor ◽

Radiation Effect ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Effect Transistor ◽

Dose Radiation

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High-Mobility p-Channel Metal-Oxide-Semiconductor Field-Effect-Transistor on Strained Si

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.2412 ◽

1994 ◽

Vol 33 (Part 1, No. 4B) ◽

pp. 2412-2414 ◽

Cited By ~ 13

Author(s):

Deepak K. Nayak ◽

Jason C. S. Woo ◽

Jin S. Park ◽

Kang L. Wang ◽

Ken P. MacWilliams

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Effect Transistor

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Influence of dislocations in strained Si∕relaxed SiGe layers on n+∕p-junctions in a metal-oxide-semiconductor field-effect transistor technology

Applied Physics Letters ◽

10.1063/1.2128490 ◽

2005 ◽

Vol 87 (19) ◽

pp. 192112 ◽

Cited By ~ 25

Author(s):

Geert Eneman ◽

Eddy Simoen ◽

Romain Delhougne ◽

Peter Verheyen ◽

Roger Loo ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Effect Transistor

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Investigation of Transport Mechanism for Strained Si n Metal-Oxide-Semiconductor Field-Effect Transistor Grown on Multi-Layer Substrate

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.l1560 ◽

2005 ◽

Vol 44 (No. 51) ◽

pp. L1560-L1562 ◽

Cited By ~ 2

Author(s):

Yen Ping Wang ◽

San Lein Wu ◽

Shoou Jinn Chang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Transport Mechanism ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Effect Transistor

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Threshold voltage analytical model of fully depleted strained Si single Halo silicon-on-insulator metal-oxide semiconductor field effect transistor

Acta Physica Sinica ◽

10.7498/aps.62.108501 ◽

2013 ◽

Vol 62 (10) ◽

pp. 108501

Author(s):

Xin Yan-Hui ◽

Liu Hong-Xia ◽

Fan Xiao-Jiao ◽

Zhuo Qing-Qing

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Strained Si ◽

Fully Depleted ◽

Effect Transistor

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Future of Nanoscale Strained Si/SixGe1–x Metal-Oxide Semiconductor Field-Effect Transistor for Performance Metric Evaluation: A Review

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2014.1608 ◽

2014 ◽

Vol 9 (3) ◽

pp. 317-326 ◽

Cited By ~ 3

Author(s):

Engsiew Kang ◽

Fatimah Khairiah Abdul Hamid ◽

Razali Ismail

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Performance Metric ◽

Effect Transistor

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Investigation of Enhanced Impact Ionization in Uniaxially Strained Si n-Channel Metal Oxide Semiconductor Field Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04dc14 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DC14 ◽

Cited By ~ 3

Author(s):

Shinichiro Adachi ◽

Tanemasa Asano

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Impact Ionization ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Effect Transistor

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High‐mobilityp‐channel metal‐oxide‐semiconductor field‐effect transistor on strained Si

Applied Physics Letters ◽

10.1063/1.109205 ◽

1993 ◽

Vol 62 (22) ◽

pp. 2853-2855 ◽

Cited By ~ 136

Author(s):

D. K. Nayak ◽

J. C. S. Woo ◽

J. S. Park ◽

K. L. Wang ◽

K. P. MacWilliams

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Effect Transistor

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Role of Si1−xGex buffer layer on mobility enhancement in a strained-Si n-channel metal–oxide–semiconductor field-effect transistor

Applied Physics Letters ◽

10.1063/1.125197 ◽

1999 ◽

Vol 75 (19) ◽

pp. 2948-2950 ◽

Cited By ~ 72

Author(s):

Nobuyuki Sugii ◽

Kiyokazu Nakagawa ◽

Shinya Yamaguchi ◽

Masanobu Miyao

Keyword(s):

Metal Oxide ◽

Buffer Layer ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Effect Transistor

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