Two-dimensional model of symmetrical double-gate strained Si single Halo metal-oxide semiconductor field effect transistor with gate stack dielectric

Xin Yan-Hui;  Liu Hong-Xia;  Wang Shu-Long;  Fan Xiao-Jiao

doi:10.7498/aps.63.248502

Two-dimensional model of symmetrical double-gate strained Si single Halo metal-oxide semiconductor field effect transistor with gate stack dielectric

Acta Physica Sinica ◽

10.7498/aps.63.248502 ◽

2014 ◽

Vol 63 (24) ◽

pp. 248502

Author(s):

Xin Yan-Hui ◽

Liu Hong-Xia ◽

Wang Shu-Long ◽

Fan Xiao-Jiao

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Two Dimensional ◽

Dimensional Model ◽

Strained Si ◽

Two Dimensional Model ◽

Effect Transistor

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A two-dimensional model for the subthreshold swing of short-channel double-gate metal–oxide–semiconductor field effect transistors with a vertical Gaussian-like doping profile

Journal of Applied Physics ◽

10.1063/1.3552309 ◽

2011 ◽

Vol 109 (5) ◽

pp. 054508 ◽

Cited By ~ 14

Author(s):

Sarvesh Dubey ◽

Pramod Kumar Tiwari ◽

S. Jit

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Doping Profile ◽

Double Gate ◽

Two Dimensional ◽

Dimensional Model ◽

Short Channel ◽

Two Dimensional Model

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An Accurate Drain Current Model of Dual Material Double Gate Metal Oxide Semiconductor Field Effect Transistor

Silicon ◽

10.1007/s12633-021-01321-y ◽

2021 ◽

Author(s):

Himeli Chakrabarti ◽

Reshmi Maity ◽

S. Baishya ◽

N. P. Maity

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Current Model ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

Dual Material

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Threshold voltage modeling under size quantization for ultra-thin silicon double-gate metal-oxide-semiconductor field-effect transistor

Journal of Applied Physics ◽

10.1063/1.4737779 ◽

2012 ◽

Vol 112 (2) ◽

pp. 024513 ◽

Cited By ~ 7

Author(s):

Aditya Sankar Medury ◽

K. N. Bhat ◽

Navakanta Bhat

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Size Quantization ◽

Effect Transistor ◽

Thin Silicon

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A compact quantum model of nanoscale double-gate metal-oxide-semiconductor field-effect transistor for high frequency and noise simulations

Journal of Applied Physics ◽

10.1063/1.2360379 ◽

2006 ◽

Vol 100 (8) ◽

pp. 084320 ◽

Cited By ~ 26

Author(s):

A. Lázaro ◽

B. Nae ◽

O. Moldovan ◽

B. Iñiguez

Keyword(s):

Metal Oxide ◽

High Frequency ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Model ◽

Double Gate ◽

Effect Transistor

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Threshold voltage modeling and performance comparison of a novel linearly graded binary metal alloy gate junctionless double gate metal oxide semiconductor field effect transistor

Indian Journal of Physics ◽

10.1007/s12648-014-0584-5 ◽

2014 ◽

Vol 89 (6) ◽

pp. 593-598

Author(s):

S. Sarkhel ◽

B. Manna ◽

S. K. Sarkar

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Performance Comparison ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

And Performance

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Analog performance of the nanoscale double-gate metal-oxide-semiconductor field-effect-transistor near the ultimate scaling limits

Journal of Applied Physics ◽

10.1063/1.1778485 ◽

2004 ◽

Vol 96 (9) ◽

pp. 5271-5276 ◽

Cited By ~ 27

Author(s):

D. Jiménez ◽

B. Iñíguez ◽

J. Suñé ◽

J. J. Sáenz

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Scaling Limits ◽

Double Gate ◽

Analog Performance ◽

Effect Transistor

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Extraction of strained-Si metal-oxide-semiconductor field-effect transistor parameters using small signal channel conductance method

Journal of Applied Physics ◽

10.1063/1.2161800 ◽

2006 ◽

Vol 99 (3) ◽

pp. 034501 ◽

Cited By ~ 9

Author(s):

G. K. Dalapati ◽

S. Chattopadhyay ◽

L. S. Driscoll ◽

A. G. O’Neill ◽

K. S. K. Kwa ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Small Signal ◽

Channel Conductance ◽

Strained Si ◽

Conductance Method ◽

Effect Transistor ◽

Signal Channel

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Fabrication and characterization of vertical-type double-gate metal-oxide-semiconductor field-effect transistor with ultrathin Si channel and self-aligned source and drain

Applied Physics Letters ◽

10.1063/1.2173715 ◽

2006 ◽

Vol 88 (7) ◽

pp. 072103 ◽

Cited By ~ 7

Author(s):

Meishoku Masahara ◽

Yongxun Liu ◽

Kazuhiko Endo ◽

Takashi Matsukawa ◽

Kunihiro Sakamoto ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

Fabrication And Characterization

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Two-dimensional model of a heterojunction silicon-on-insulator tunnel field effect transistor

Superlattices and Microstructures ◽

10.1016/j.spmi.2015.12.013 ◽

2016 ◽

Vol 90 ◽

pp. 176-183 ◽

Cited By ~ 10

Author(s):

Sweta Chander ◽

S. Baishya

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Silicon On Insulator ◽

Two Dimensional ◽

Dimensional Model ◽

Two Dimensional Model ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Sensitivity Analysis of Double Gate Metal Oxide Semiconductor Field Effect Transistor for Bio-Sensing Applications

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2019.2466 ◽

2019 ◽

Vol 14 (1) ◽

pp. 136-145 ◽

Cited By ~ 1

Author(s):

B. Buvaneswari ◽

N. B. Balamurugan

Keyword(s):

Sensitivity Analysis ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Sensing Applications ◽

Effect Transistor

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