Effect of current crowding on void propagation at the interface between intermetallic compound and solder in flip chip solder joints

2006 ◽  
Vol 88 (1) ◽  
pp. 012106 ◽  
Author(s):  
Lingyun Zhang ◽  
Shengquan Ou ◽  
Joanne Huang ◽  
K. N. Tu ◽  
Stephen Gee ◽  
...  
Keyword(s):  
Intermetallic Compound ◽  
Flip Chip ◽  
Solder Joints ◽  
Current Crowding ◽  
Void Propagation

Nonuniform and Negative Marker Displacements Induced by Current Crowding During Electromigration in Flip-Chip Sn-0.7Cu Solder Joints

2009 ◽  
Vol 38 (12) ◽  
pp. 2443-2448 ◽  
Author(s):  
S. W. Liang ◽  
Hsiang-Yao Hsiao ◽  
Chih Chen ◽  
Luhua Xu ◽  
K. N. Tu ◽  
...  
Keyword(s):  
Flip Chip ◽  
Solder Joints ◽  
Current Crowding ◽  
Negative Marker

Effect of current crowding on whisker growth at the anode in flip chip solder joints

2007 ◽  
Vol 91 (23) ◽  
pp. 231919 ◽  
Author(s):  
Fan-Yi Ouyang ◽  
Kai Chen ◽  
K. N. Tu ◽  
Yi-Shao Lai
Keyword(s):  
Flip Chip ◽  
Whisker Growth ◽  
Solder Joints ◽  
Current Crowding

Influence of Cu column under-bump-metallizations on current crowding and Joule heating effects of electromigration in flip-chip solder joints

2012 ◽  
Vol 111 (4) ◽  
pp. 043705 ◽  
Author(s):  
Y. C. Liang ◽  
W. A. Tsao ◽  
Chih Chen ◽  
Da-Jeng Yao ◽  
Annie T. Huang ◽  
...  
Keyword(s):  
Joule Heating ◽  
Flip Chip ◽  
Solder Joints ◽  
Current Crowding ◽  
Heating Effects

Numerical Simulations of Electromigration and Stress Migration Driven Void Propagation in Pb Free Solder Interconnects

2011 ◽  
Author(s):  
Subramanya Sadasiva ◽  
Ganesh Subbarayan ◽  
Lei Jiang ◽  
Daniel Pantuso
Keyword(s):  
Flip Chip ◽  
Field Model ◽  
Solder Joints ◽  
Equations Of Motion ◽  
Phase Field Model ◽  
Solder Interconnects ◽  
Energy Stress ◽  
Current Densities ◽  
Void Propagation ◽  
Free Solder

Increasing miniaturization has led a significant increase in the current densities seen in flip-chip solder joints. This has made the study of failure in solder joints by void propagation due to electromigration and stress migration more important. In this study, we develop a phase field model for the motion of voids through a flip chip solder interconnect. We derive equations of motion for the void accounting for energetic contributions from the active factors of surface energy, stress and electric potential, taking into account both surface diffusion and transfer of the material through the bulk of the material. We describe the implementation of this model using finite elements, coupled with a commercial finite element solver to solve for the fields driving the void motion.

Electromigration Reliability With Respect to Cu Weight Contents of Sn–Ag–Cu Flip-Chip Solder Joints Under Comparatively Low Current Stressing

2008 ◽  
Vol 130 (4) ◽  
Author(s):  
Yi-Shao Lai ◽  
Ying-Ta Chiu
Keyword(s):  
Intermetallic Compound ◽  
Ambient Temperature ◽  
Current Density ◽  
Flip Chip ◽  
Solder Joints ◽  
Average Current Density ◽  
Current Stressing ◽  
Weight Content ◽  
Average Current ◽  
Better Than

This work presents electromigration reliability and patterns of Sn–3Ag–0.5Cu and Sn–3Ag–1.5Cu∕Sn–3Ag–0.5Cu composite flip-chip solder joints with Ti∕Ni(V)∕Cu under bump metallurgy (UBM), bonded on Au∕Ni∕Cu substrate pads. The solder joints were subjected to an average current density of 5kA∕cm2 under an ambient temperature of 150°C. Under the situation when electron charges flow from the UBM toward the substrate, Sn diffuses from the Cu–Ni–Sn intermetallic compound developed around the UBM toward the UBM and eventually causes the Ni(V) layer to deform. Electromigration reliability of Sn–3Ag–1.5Cu∕Sn–3Ag–0.5Cu composite flip-chip solder joints was found to be better than that of Sn–3Ag–0.5Cu solder joints. According to the morphological observations on cross-sectioned solder joints, a failure mechanism is proposed as follows. Since the deformation of the Ni(V) layer as a result of Sn diffusion toward the UBM is considered as the dominant failure, a greater Cu weight content in the solder joints would trap more Sn in the Sn–Cu interfacial reaction and would therefore retard the diffusion of Sn toward the UBM and hence enhance the electromigration reliability.

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