Modeling of electromigration on void propagation at the interface between under bump metallization and intermetallic compound in flip-chip ball grid array solder joints

2010 ◽  
Vol 107 (9) ◽  
pp. 093526 ◽  
Author(s):  
Ming-Hwa R. Jen ◽  
Lee-Cheng Liu ◽  
Yi-Shao Lai
Keyword(s):  
Intermetallic Compound ◽  
Flip Chip ◽  
Solder Joints ◽  
Ball Grid Array ◽  
Under Bump Metallization ◽  
Void Propagation

Effect of current crowding on void propagation at the interface between intermetallic compound and solder in flip chip solder joints

2006 ◽  
Vol 88 (1) ◽  
pp. 012106 ◽  
Author(s):  
Lingyun Zhang ◽  
Shengquan Ou ◽  
Joanne Huang ◽  
K. N. Tu ◽  
Stephen Gee ◽  
...  
Keyword(s):  
Intermetallic Compound ◽  
Flip Chip ◽  
Solder Joints ◽  
Current Crowding ◽  
Void Propagation

Failure Analysis of the Solder Joints in Flip-Chip BGA Packages under Free-Drop Test

2014 ◽  
Vol 936 ◽  
pp. 628-632 ◽  
Author(s):  
Guo Zheng Yuan ◽  
Xia Chen ◽  
Xue Feng Shu
Keyword(s):  
Flip Chip ◽  
Solder Joints ◽  
Ball Grid Array ◽  
Test Method ◽  
Drop Test ◽  
Test Reliability ◽  
Internal Crack ◽  
The Real ◽  
Plastic Ball ◽  
Free Drop

The failure of plastic ball grid array under intense dynamic loading was studied in the project. This paper presents the drop test reliability results of SnPb flip-chip on a standard JEDEC drop reliability test board. The failure mode and mechanism of planar array package in the drop test was comprehensively analyzed. High acceleration dropping test method was used to research the reliability of BGA (ball grid array) packages during the free-drop impact process. The model RS-DP-03A drop device was used to simulate the falling behavior of BGA chip packages under the real conditions, The drop condition meets the JEDEC22-B111 standards (pulse peak 1500g, pulse duration 0.5 ms) when dropping from the 650mm height . In the testing, according to the real-time changes of dynamic voltage, the relationship between drop times and different phases of package failure was analyzed. With the dye-penetrated method and optical microscopy, it was easy to observe the internal crack and failure locations. The growth mechanism of the cracks in solder joints under the condition of drop-free was analyzed and discussed.

Numerical Simulations of Electromigration and Stress Migration Driven Void Propagation in Pb Free Solder Interconnects

2011 ◽  
Author(s):  
Subramanya Sadasiva ◽  
Ganesh Subbarayan ◽  
Lei Jiang ◽  
Daniel Pantuso
Keyword(s):  
Flip Chip ◽  
Field Model ◽  
Solder Joints ◽  
Equations Of Motion ◽  
Phase Field Model ◽  
Solder Interconnects ◽  
Energy Stress ◽  
Current Densities ◽  
Void Propagation ◽  
Free Solder

Increasing miniaturization has led a significant increase in the current densities seen in flip-chip solder joints. This has made the study of failure in solder joints by void propagation due to electromigration and stress migration more important. In this study, we develop a phase field model for the motion of voids through a flip chip solder interconnect. We derive equations of motion for the void accounting for energetic contributions from the active factors of surface energy, stress and electric potential, taking into account both surface diffusion and transfer of the material through the bulk of the material. We describe the implementation of this model using finite elements, coupled with a commercial finite element solver to solve for the fields driving the void motion.

Electromigration Reliability With Respect to Cu Weight Contents of Sn–Ag–Cu Flip-Chip Solder Joints Under Comparatively Low Current Stressing

2008 ◽  
Vol 130 (4) ◽  
Author(s):  
Yi-Shao Lai ◽  
Ying-Ta Chiu
Keyword(s):  
Intermetallic Compound ◽  
Ambient Temperature ◽  
Current Density ◽  
Flip Chip ◽  
Solder Joints ◽  
Average Current Density ◽  
Current Stressing ◽  
Weight Content ◽  
Average Current ◽  
Better Than

This work presents electromigration reliability and patterns of Sn–3Ag–0.5Cu and Sn–3Ag–1.5Cu∕Sn–3Ag–0.5Cu composite flip-chip solder joints with Ti∕Ni(V)∕Cu under bump metallurgy (UBM), bonded on Au∕Ni∕Cu substrate pads. The solder joints were subjected to an average current density of 5kA∕cm2 under an ambient temperature of 150°C. Under the situation when electron charges flow from the UBM toward the substrate, Sn diffuses from the Cu–Ni–Sn intermetallic compound developed around the UBM toward the UBM and eventually causes the Ni(V) layer to deform. Electromigration reliability of Sn–3Ag–1.5Cu∕Sn–3Ag–0.5Cu composite flip-chip solder joints was found to be better than that of Sn–3Ag–0.5Cu solder joints. According to the morphological observations on cross-sectioned solder joints, a failure mechanism is proposed as follows. Since the deformation of the Ni(V) layer as a result of Sn diffusion toward the UBM is considered as the dominant failure, a greater Cu weight content in the solder joints would trap more Sn in the Sn–Cu interfacial reaction and would therefore retard the diffusion of Sn toward the UBM and hence enhance the electromigration reliability.

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